• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.889-892
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• 2009

We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.638-641
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• 2001

Connectorless power transmission and supply are the power transfer device revealed by resonant inverter or transformer using inductant device. Recently, on power supply have been going on frequently, so several power supply circuit forms are announced. But Compared with the circuit of previous paper, instead of the circuit composed of a simple sylinder Ferrit, I was manufacture in a sylinder that It was a double overlab to a sylinder and I was followed a double flux in inner flux path. Above all, for practicalization, supply circuit operation character analysis and development of controller should be preceded. According to this paper, power transmission and supply analyze characters and design control circuit like the analysis of general resonant inverter for power transmission. They compose the circuit to get sinusoid wave output voltage using pulse width modulation control mode. For Supply, output wave form through power track and power pick-up of magnetic inductance includes ripper component. So I intend to design the controller including filter and regulator, compare analyze theoretical result with real measurement value and then show you their practicality

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.418-421
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• 2001

Press brake is used as bending and forming sheet metal in vehicle and many kind of industry. This paper deals with development of NC press brake based on high precision positioning device and software, which can be operated on personal computer. In this system, positioning device is used for controlling bending angle and operated by the developed software, which is database from material property, width and thickness of material. This study will make distribution in development of computer aided press brake.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 B
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• pp.1078-1080
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• 2003

This paper proposes the boost input type resonant power supply for driving the magnetron device of the high-capacity microwave oven. Circuit topology of the proposed power supply is the boost input type resonant converter which uses the resonance between transformer leakage inductance and resonance capacitance. Proposed power supply obtains high power factor more than 98% through continuous current mode pulse width modulation. To verify the validity of the proposed power supply, operation principle in the steady state is analyzed and experimental results are presented.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.148-151
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• 2017

This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings $13{\mu}m$ and the field ring width was $5{\mu}m$. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.1129-1132
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• 1995

Recently, the concept of automation is widely in shipping and unloading materials using the overhead crane for the enhanced productivity. In this regards, we designed an overhead crane that can be operated by operated by computer control system and installed this system at KAERI. In this paper, we introduce algorithms to find the 3D position, diameter, width, and rotated angle of objects such as drum, coil, and container. And the performance of the presented algorithms is tested using drum and container. The result will be useful for positoning grapple device such as spreader to objects in order to automatically grasp them.

• ETRI Journal
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• 제34권1호
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.572-575
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• 2009

In this study, we proposed WLED(White-Light Emitting Diode) driver IC for mobile applications. This IC drove WLED for mobile applications with low input voltage and high efficiency by using boost converter. The device was designed by using boost converter applied current-mode control algorithm and provided PWM(Pulse Width Modulation) & analog dimming. Designed IC consisted of bias block, drive block, control block, protection block. We confirmed this device worked well through a application PCB (Printed Circuit Board) test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.83-84
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40V/1A high-power output for voltage reference of automotive IC. It provides 250kHz PWM(pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated Spectre of IC Design Tool And fabricated Dong-bu Hitec 0.35um BD350BA process.