• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.433-433
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• 2009

ZnO-based materials have been extensively studied for optoelectronic applications due to their superiors physical properties such as wide direct bandgap (~3.37 eV), large exciton binding energy (~60 meV), high transparency in the visible region, and low cost. Especially, one-dimensional (1D) ZnO nanostructures have attracted considerable attention owing to quantum confinement effect and high crystalline quality. Additionally, various nanostructures of ZnO such as nanorods, nanowires, nanoflower, and nanotubes have stimulated the interests because of their semiconducting. and piezoelectric properties. Among them, vertically aligned ZnO nanorods can bring the improved performance in various promising photoelectric fields including piezo-nanogenerators, UV lasers, dye sensitized solar cells, and photo-catalysis. In this work, we studied the effect of the annealing temperature of homo seed layers on the formation of ZnO nanorods grown by hydrothermal method. The effect of annealing temperature of seed layer on the length and orientation of the nanorods was investigated scanning electron microscopy investigation. Transmission electron microscopy and X-ray diffraction measurement were performed to understand the effect of annealing temperatures of seed layers on the formation of nanorods. Moreover, the optical properties of the seed layers and the nanorods were studied by room temperature photoluminescence.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 전기화학회지
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• 제14권3호
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• pp.145-151
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• 2011

ZnSe는 가시광선 영역에서 넓은 밴드갭을 가지고 있는 II-VI족 화합물 반도체 소자로서 레이저 다이오드, 디스플레이 그리고 태양전지와 같은 다양한 응용분야에 적용되고 있다. 본 연구에서는 전기화학적 전착방법을 이용하여 ITO 전극상에 ZnSe 박막을 합성하여, XRD와 SEM으로 ZnSe 결정의 합성과 zinc blende 구조의 형태를 관측하였고, UV 분광기를 활용하여 밴드갭을 측정한 결과 2.76 eV이었다. 또한, 분자동역학에서 활용되는 밀도범함수 이론 (DFT, Density Functional Theory)을 도입하여 ZnSe 결정에 대한 밴드 구조의 해석을 수행하였다. Zinc blende구조를 갖는 ZnSe 결정에 대하여 LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), 그리고 B3LYP (Becke, 3-parameter, Lee-Yang-Parr) 범함수를 이용하여 밴드구조와 상태밀도 (Density of State)를 모사하였다. 각각의 경우에 대해 에너지 밴드갭을 구한 결과, B3LYP 범함수로 해석한 경우에 실험치와 근사치인 2.65 eV의 밴드갭을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.177-177
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• 2011

Complementary metal-insulator-metal capacitor에서 $SiO_2$는 절연체로 널리 사용되고 있었으나, 반도체 소자의 고직접화로 인한 선폭의 감소로 터널링 효과에 의해 누설전류가 증가하여, 대체 물질에 대한 연구가 활발히 진행되고 있다. 그 중 $ZrO_2$는 고유전율, wide bandgap, 열안정성의 특징을 가지고 있어 대체 물질로 주목 받고 있다. $ZrO_2$ 박막 제작에는 sputter, atomic layer deposition 등의 진공증착을 이용한 방법과 용액을 이용한 sol-gel 법이 있다. 화학용액을 이용한 sol-gel 법은 소자의 패턴을 프린트 할 수 있는 장점과 상대적으로 값싼 공정으로 인해 최근 주목 받고 있지만, 진공증착법에 비해서 연구가 전무한 실정이다. 본 연구에서는 sol-gel 법에 의해 프린트된 $ZrO_2$ 박막의 광특성을 분광타원편광분석법으로 연구하였다. Si 기판위에 0.1 M의 $ZrO_2$ sol을 입힌 뒤에 $300{\sim}700^{\circ}C$의 온도에서 열처리 하였다. 분광타원 편광분석기로 1.12~6.52 eV 에너지 영역에서 측정하였고, $ZrO_2$ 박막의 광특성 분석을 위해서 Tauc-Lorentz 모델을 이용하였다. 그 결과 고온에서의 열처리로 인해 효율이 높아서 소자로 이용할 수 있는 tetragonal 구조를 가진 $ZrO_2$ 박막이 형성됨을 분석할 수 있었다. 본 연구는 sol-gel법으로 제작된 $ZrO_2$ 박막의 고직접, 고속 소자응용성과 비파괴적인 광특성 분석법을 제시하고 있다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.141-141
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• 2018

Copper is one of the most abundant metals on earth. Its oxide (CuO) is an intrinsically p-type metal-oxide semiconductor with a bandgap ($E_g$) of 1.2-2.0 eV 1. Copper oxide nanomaterials are considered as promising materials for a wide range of applications e.g., lithium ion batteries, dye-sensitized solar cells, photocatalytic hydrogen production, photodetectors, and biogas sensors 2-7. Recently, high-density and uniform CuO nanostructures have been grown on Cu foils in alkaline solutions 3. In 2011, T. Soejima et al. proposed a facile process for the oxidation synthesis of CuO nanobelt arrays using $NH_3-H_2O_2$ aqueous solution 8. In 2017, G. Kaur et al. synthesized CuO nanostructures by treating Cu foils in $NH_4OH$ at room temperature for different treatment times 9. The surface treatment of Cu in alkaline aqueous solutions is a potential method for the mass fabrication of CuO nanostructures with high uniformity and density. It is interesting to compare the gas sensing properties among CuO nanomaterials synthesized by this approach and by others. Nevertheless, none of above studies investigated the gas sensing properties of as-synthesized CuO nanomaterials. In this study, CuO nanowalls versus nanoparticles were synthesized via the oxidation process of Cu foil in NH4OH solution at $50-70^{\circ}C$. The gas sensing properties of the as-prepared CuO nanoplates were examined with $C_2H_5OH$, $CH_3COCH_3$, and $NH_3$ at $200-360^{\circ}C$.

• 센서학회지
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• 제29권3호
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• pp.187-193
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• 2020

Ultraviolet (UV) sensors are widely applied in industrial and military fields such as environmental monitoring, medicine and astronomy. Zinc oxide (ZnO) is considered as one of the promising materials for UV sensors because of its ease of fabrication, wide bandgap (3.37 eV) and high chemical stability. In this study, we used the hydrothermal growth of ZnO to form two types of ZnO nanostructures (Nanoflower and nanorod) and applied them to a UV sensor. To improve the performance of the UV sensor, the hydrothermal growth was used in a two-step process for fabricating ZnO hierarchical nanostructures. The fabricated ZnO hierarchical nanostructure improved the performance of the UV sensor by increasing the ratio of volume to surface area and the number of nanojunctions compared to one-step hydrothermal grown ZnO nanostructure. The UV sensor based on the ZnO hierarchical nanostructure had a maximum photocurrent of 44 ㎂, which is approximately 3 times higher than that of a single nanostructure. The UV sensor fabrication method presented in this study is simple and based on the hydrothermal solution process, which is advantageous for large-area production and mass production; this provides scope for extensive research in the field of UV sensors.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• 한국표면공학회지
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• 제54권6호
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• pp.340-347
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• 2021

Among various metal oxide semiconductors, ZnO has an excellent electrical, optical properties with a wide bandgap of 3.3 eV. It can be applied as a photocatalytic material due to its high absorption rate along with physical and chemical stability to UV light. In addition, it is important to control the morphology of ZnO because the size and shape of the ZnO make difference in physical properties. In this paper, we demonstrate synthesis of size-controlled ZnO tetrapods using an atmospheric pressure plasma system. A micro-sized Zn spherical powder was continuously introduced in the plume of the atmospheric plasma jet ignited with mixture of oxygen and nitrogen. The effect of plasma power and collection sites on ZnO nanostructure was investigated. After the plasma discharge for 10 min, the produced materials deposited inside the 60-cm-long quartz tube were obtained with respect to the distance from the plume. According to the SEM analysis, all the synthesized nanoparticles were found to be ZnO tetrapods ranging from 100 to 600-nm-diameter depending on both applied power and collection site. The photocatalytic efficiency was evaluated by color change of methylene blue solution using UV-Vis spectroscopy. The photocatalytic activity increased with the increase of (101) and (100) plane in ZnO tetrapods, which is caused by enhanced chemical effects of plasma process.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.