• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.229-232
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• 2005

Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

• Progress in Superconductivity and Cryogenics
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• v.26 no.2
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• pp.1-4
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• 2024

We investigated Pb_10-xCu_x(PO₄)₆ (0.9 < x < 1.1) (LK-99) and Cu₂S, presumed to be contained as an impurity in LK-99, in a wide spectral range from far infrared to ultraviolet using optical spectroscopy. The optical conductivity spectra of both samples were obtained from measured reflectance spectra at various temperatures from 80 to 434 K. Both samples showed several infrared-active phonons in the far and mid-infrared regions. LK-99 showed typical insulating features with a band gap of ~1 eV. Cu₂S showed a nonmonotonic temperature-dependent trend and two energy gaps: one energy gap of ~93 meV and a band gap of 2.42 eV. Our results indicate that LK-99 cannot be a superconductor because it is an insulator with a large band gap.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.

• Journal of Hydrogen and New Energy
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• v.24 no.2
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• pp.107-112
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• 2013

The ZnO is able to produce hydrogen from water however it can only absorb ultraviolet region due to its 3.37eV of wide band gap. Therefore efficiency of solar hydrogen production is low. In this work we report investigation results of improved visible light photo-catalytic properties of CdSe quantum dots(QDs) sensitized ZnO nanorod heterostructures. Hydrothermally vertically grown ZnO nanorod arrays on FTO glass were sensitized with CdSe by using SILAR(successive ionic layer adsorption and reaction) method. Morphology of grown ZnO and CdSe sensitized ZnO nanorods had been investigated by FE-SEM that shows length of $2.0{\mu}m$, diameter of 120~150nm nanorod respectively. Photocatalytic measurements revealed that heterostructured samples show improved photocurrent density under the visible light illumination. Improved visible light performance of the heterostructures is resulting from narrow band gap of the CdSe and its favorable conduction band positions relative to potentials of ZnO band and water redox reaction.

• Korean Chemical Engineering Research
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• v.57 no.3
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• pp.331-337
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• 2019

Titania has become the most applicable material for photocatalytic application. Nevertheless, titania has the weak point in its wide band gap energy that is mainly activated by UV irradiation. There have been vast research challenges in order to make the wide band gap energy of titania narrow that could be activated in the presence of visible light. Various modifications of titania surface were popular because titania needs to change its surface to respond in visible light. Among the methodological approaches, N-doping to titania can be the alternative candidate because it is facile process and eco-friendly. The activated electron from valence band in N-doped $TiO_2$ migrates to conduction band in the presence of visible light irradiation, which shows photocatalytic activity as well. In this study, focused on the evaluation of nitrogen state after N-doping through brief review. Arguments are still existed in nitrogen states and their different effects on photocatalytic activity. In particular, two nitrogen states are generally reported; substitutional and interstitial states. The research articles regarding N-doped $TiO_2$ are continuously appearing because the potential application of water split in visible light is still fascinate. The future of N-doped $TiO_2$ is also presented by referrals based on various literature.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Journal of Energy Engineering
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• v.22 no.1
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• pp.58-81
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• 2013

Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.145-151
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• 2011

ZnSe, as a II-VI compound semiconductor which has a wide band gap in the visible region is applicable to the various fields such as laser diode, display and solar cell. By using the electrochemical deposition method, ZnSe thin film was synthesized on the ITO glass substrate. The synthesis of ZnSe grains and their structure having zinc blende shape were verified through the analysis of XRD and SEM. UV spectrophotometric method determined the band gap as the value of 2.76 eV. Applying the DFT (Density Functional Theory) in the molecular dynamics, the band structure of ZnSe grains was analyzed. For ZnSe grains with zinc blende structure, the band structure and its density of state were simulated using LDA (Local Density Approximation), PBE (Perdew Burke Ernzerhof), and B3LYP (Becke, 3-parameter, Lee-Yang-Parr) functionals. Among the calculations of energy band gap upon each functional, the simulated one of 2.65 eV based on the B3LYP functional was mostly near by the experimental measurement.