• Title/Summary/Keyword: wet-plasma

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Fabrication of Large Area Transmission Electro-Absorption Modulator with High Uniformity Backside Etching

  • Lee, Soo Kyung;Na, Byung Hoon;Choi, Hee Ju;Ju, Gun Wu;Jeon, Jin Myeong;Cho, Yong Chul;Park, Yong Hwa;Park, Chang Young;Lee, Yong Tak
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.220-220
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    • 2013
  • Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

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Characteristic of Pd-Cu-Ni Alloy Hydrogen Membrane using the Cu Reflow (Cu Reflow를 이용한 Pd-Cu-Ni 합금 수소분리막 특성)

  • Kim, Dong-Won;Kim, Heung-Gu;Um, Ki-Youn;Kim, Sang-Ho;Lee, In-Seon;Park, Jong-Su;Ryi, Shin-Kun
    • Korean Chemical Engineering Research
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    • v.44 no.2
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    • pp.160-165
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    • 2006
  • A Pd-Cu-Ni alloyed hydrogen membrane has fabricated on porous nickel support formed by nickel powder. Porous nickel support made by sintering shows a strong resistance to hydrogen embrittlement and thermal fatigue. Plasma surface modification treatment is introduced as pre-treatment process instead of conventional HCl wet activation. Nickel was electroplated to a thickness of $2{\mu}m$ in order in to fill micropores at the nickel support surface. Palladium and copper were deposited at thicknesses of $4{\mu}m$ and $0.5{\mu}m$, respectively, on the nickel coated support by DC sputtering process. Subsequently, copper reflow at $700^{\circ}C$ was performed for an hour in $H_2$ ambient. And, as a result PdCu-Ni composite membrane has a pinhole-free and extremely dense microstructure, having a good adhesion to the porous nickel support and infinite hydrogen selectivity in $H_2/N_2$ mixtures.

An Evaluation of Skiving Cutting Characteristics of TiCN PACVD Coating Caribide Hob (TiCN PACVD코팅 초경호브의 Skiving절삭특성 평가)

  • Cheon, Jong-Pil
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.13 no.2
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    • pp.471-477
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    • 2012
  • SCM420 steel tempered after performing gear hove PACVD carbide coating on the surface after the cutting surface hardness was high. Difficult-to-cut, without coating is classified as mild as large, including materials like mild, high strength that improves tool life and productivity have limited availability. Drive to improve it in the TiCN-coated carbide call for war to the finish coating on cutting a hob skiving good workability, tool wear less, 2.5-fold increase in tool life results were obtained. Experiments using CNC Skiving hobbing machine with wet cutting conditions, cutting speed and feed rate to apply a variety of the tool wear and surface roughness data were obtained. Results from condition 2 (V = 200m/min F = 0.7mm/rev) cutting speed feed mark the cutting surface microstructure and surface roughness Rmax $4.7{\mu}m$(Ra $1.19{\mu}m$) of the data was obtained.

Direct Patterning Technology of Indium Tin Oxide Layer using Nd:$YVO_4$ Laser Beam (Nd:$YVO_4$ 레이저 빔을 이용한 인듐 주석 산화물 직접 묘화 기술)

  • Kim, Kwang-Ho;Kwon, Sang-Jik
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.11
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    • pp.8-12
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    • 2008
  • For the reduction of fabrication cost and process time of AC plasma display panel (PDP), indium tin oxide (ITO) layer was patterned as bus electrode using Nd:$YVO_4$ laser. In comparison with the chemically wet etched ITO patterns, laser ablated ITO patterns showed the formation of shoulders and ripple-like structures at the edge of the ITO lines. For the reduction of shoulders and ripple-like structures, pulse repetition rate and scan velocity of laser was changed. In addition, we analyzed a discharge characteristic of PDP test panel to observe how the shoulders and ripple-like structures influence on the PDP. Based on experimental results, the pattern etched at the 500 mm/s and 40 kHz was better than any other condition. From this experiment we could see the possibility of the laser direct patterning for the application to the patterning of ITO in AC-PDP.

Synthesis and Sinterability of Hydroxyapatite from Fishery by-products

  • Wibisono, Yusuf;Dwijaksara, Ni Luh Bella;Widayatno, Wahyu Bambang;Wismogroho, Agus Sukarto;Amal, Muhamad Ikhlasul;Rochman, Nurul Taufiqu;Nishimura, Toshiyuki;Noviyanto, Alfian
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.570-575
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    • 2018
  • Hydroxyapatites (HAps) were synthesized using the powdered waste of fishery products, i.e., fish scales and crab shells, as starting materials. HAp was synthesized by a wet-chemistry method followed by calcination at 600 and $800^{\circ}C$. Calcined crabshell powder revealed a single HAp phase and fine powder, while calcined fish-scale powder showed a ${\beta}-TCP$ secondary phase, even at the higher calcination temperature. Dense HAp pellets were obtained from the crab-shell powder by spark plasma sintering at $1000^{\circ}C$ for 10 min under applied pressures of 40 and 80 MPa in a vacuum state, giving sample densities of 2.93 and $3.06g/cm^3$, respectively. The estimated grain size of HAp was $448{\pm}96$ and $283{\pm}59nm$ for applied pressures of 40 and 80 MPa, respectively. In contrast, the HAp obtained using the pressureless sintering technique showed excessive grain growth without further densification.

Improvement in Light Extraction Efficiency of 380 nm UV-LED Using Nano-patterned n-type Gan Substrate (나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선)

  • Baek, Kwang-Sun;Jo, Min-Sung;Lee, Young-Gon;Sadasivam, Karthikeyan Giri;Song, Young-Ho;Kim, Seung-Hwan;Kim, Jae-Kwan;Jeon, Seong-Ran;Lee, June-Key
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.273-276
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    • 2011
  • Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

A study on the fabrication technology of ceramic interconnect for the SOFC by wet process (습식법을 이용한 고체산화물 연료전지용 세라믹 연결재 제조 특성연구)

  • 이길용;김종희;송락현;백동현;정두환;신동열
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.200-200
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    • 2003
  • 고체산화물 연료전지(SOFC)에서 사용되는 연결재의 주 기능은 각 단위 셀의 연료극과 다음 셀의 공기극을 전기적으로 연결하여, 공기와 사용연료의 분리역할을 하기 위하여 사용된다. SOFC용 연결재는 다른 구성요소 소재보다, 높은 전자 전도성, 낮은 이온전도성, 우수한 기계 적강도가 요구되며, SOFC는 고온에서 작동되기 때문에, 상온에서 작동온도까지 다른 요소 소재들과 유사한 열팽창계수와 물리, 화학적으로 안정성이 요구된다. 현재 연결재 제조기술은 EVD, CVD, plasma spraying, tape casting 등 다양하게 연구되고 있으며, 본 연구는 세라믹 연결재 증착방법 중 저렴한 비용으로 대량 생산이 용이한 습식법(dip coaling)을 적용하여, 연료극 지지체식 flat-tube형 고체산화물 연료전지의 지지체를 위해 세라믹 연결재를 제조하고, 그 특성을 연구하였다. 세라믹 연결재로써 선정한 합성조성은 LaCr $O_3$에 Ca이 치환 고용된 L $a_{0.6}$C $a_{0.41}$Cr $O_3$으로 pechini법으로 합성하였다. 합성된 조성은 100$0^{\circ}C$에서 5시간 하소후 가속 Ball Milling하여 0.5$\mu\textrm{m}$의 평균입자크기를 얻을 수 있었다. XRD 상분석결과 perovskite상 (L $a_{1-x}$ Ca/x/Cr $O_3$)과 CaCr $O_4$를 얻을 수 있었다. slurry를 제조하여 막의 밀착성을 증진시키기 위해 sand blasting시킨 flat tube지지체에 진공펌프를 이용하여 소재내부와 외부의 압력차로 dip coating한 후, 140$0^{\circ}C$로 소결 하였다. coating 결과 박리현상은 없었으나, 표면과 단면의 SEM분석결과 다소 porous한 박막층이 형성되었으며, Ca이온이 지지체로 permeation되는 현상이 발생하였다. 이와 같은 결과로부터 보다 치밀한 박막생성을 위해, slurry 제조조건을 변화시켰으며, Ca이온의 migration을 막기 위해 barrier layer를 이용하였다 완전 소결된 지지체는 가스투과도와 전기전도도측정을 통하여 특성을 평가하였다.였다.다.

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Highly Sensitive Gas Sensors Based on Nanostructured $TiO_2$ Thin Films

  • Jang, Ho-Won;Mun, Hui-Gyu;Kim, Do-Hong;Sim, Yeong-Seok;Yun, Seok-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.16.1-16.1
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    • 2011
  • $TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

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Trace Metal Contents in Vegetables and Their Safety Evaluations (우리나라 채소류중 미량금속 함량 및 안전성 평가)

  • 정소영;김미혜;소유섭;원경풍;홍무기
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.30 no.1
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    • pp.32-36
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    • 2001
  • This study was conducted to estimate the contents of trace metals in vegetable which were produced in Korea. The levels of trace metals determined using a mercury analyzer, and ICP (inductively coupled plasma spectrometer) and an AAS (atomic absorption spectrophotometer) after wet digestion. The values of trace metals [minimum~maximum (mean), mg/kg] in vegetables were a follows ; Hg : 0.0001~0.019 (0.002), Pb : 0.001~0.28 (0.02), Cd : 0.001~0.078 (0.016), As : 0.001~0.06 (0.02), Cu : 0.06~24.81 (0.77), Mn : 0.17~15.12 (2.32), Zn : 0.13~28.70 (2.51). These results showed that metal contents in vegetables on domestic markets were similar to those reported in other countries. The weekly average intakes of lead, cadmium and mercury from vegetables take 2~7% of PTWI (Provisional Tolerable Weekly Intakes) that the FAO/WHO Joint Food Additive and Contaminants Committee had set to evaluate their safeties.

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The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering (이온빔 스퍼터링법에 의한 다층막의 표면특성변화)

  • Lee, Chan-Young;Lee, Jae-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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