• Title/Summary/Keyword: wet film thickness

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Numerical Analysis of UV Laser Patterning of Polymeric Thin-Film (자외선 레이저를 이용한 폴리머 박막 가공의 수치해석)

  • Oh, B.K.;Lee, S.K.;Song, M.K.;Kim, J.W.;Hong, S.K.
    • Laser Solutions
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    • v.12 no.4
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    • pp.1-5
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    • 2009
  • Conventional patterning based on wet-process for multi-layered film is a relatively complex and costly process though it is a necessary step for fabrication of TFT-LCD module. Recently, a direct pattering by laser has been studied because it is low cost and simple process compared to the wet process. In this work, the selective removal process of multi-layered film (polyimide/indium tin oxide/glass) is studied by modeling the thermal and mechanical behavior for multi-layered structure. Especially, the effects of thickness of polyimide layer are examined.

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Numerical Analysis of Damping Effect of Liquid Film on Material in High Speed Liquid Droplet Impingement

  • Sasaki, Hirotoshi;Ochiai, Naoya;Iga, Yuka
    • International Journal of Fluid Machinery and Systems
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    • v.9 no.1
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    • pp.57-65
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    • 2016
  • By high speed Liquid Droplet Impingement (LDI) on material, fluid systems are seriously damaged, therefore, it is important for the solution of the erosion problem of fluid systems to consider the effect of material in LDI. In this study, by using an in-house fluid/material two-way coupled method which considers reflection and transmission of pressure, stress and velocity on the fluid/material interface, high-speed LDI on wet/dry material surface is simulated. As a result, in the case of LDI on wet surface, maximum equivalent stress are less than those of dry surface due to damping effect of liquid film. Empirical formula of the damping effect function is formulated with the fluid factors of LDI, which are impingement velocity, droplet diameter and thickness of liquid film on material surface.

Fabrication of Single Crystal Silicon Micro-Tensile Test Specimens and Thin Film Aluminum Markers for Measuring Tensile Strain Using MEMS Processes (MEMS 공정을 이용한 단결정 실리콘 미세 인장시편과 미세 변형 측정용 알루미늄 Marker의 제조)

  • 박준식;전창성;박광범;윤대원;이형욱;이낙규;이상목;나경환;최현석
    • Transactions of Materials Processing
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    • v.13 no.3
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    • pp.285-289
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    • 2004
  • Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

Development of apparatus for Single-sided Wet Etching and its applications in Corrugated Membrane Fabrication

  • Kim, Junsoo;Moon, Wonkyu
    • Journal of Sensor Science and Technology
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    • v.30 no.1
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    • pp.10-14
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    • 2021
  • Wet etching is more economical than dry etching and provides a uniform etching depth regardless of wafer sizes. Typically, potassium hydroxide (KOH) and tetra-methyl-ammonium hydroxide (TMAH) solutions are widely used for the wet etching of silicon. However, there is a limit to the wet etching process when a material deposited on an unetched surface reacts with an etching solution. To solve this problem, in this study, an apparatus was designed and manufactured to physically block the inflow of etchants on the surface using a rubber O-ring. The proposed apparatus includes a heater and a temperature controller to maintain a constant temperature during etching, and the hydrostatic pressure of the etchant is considered for the thin film structure. A corrugation membrane with a diameter of 800 ㎛, thickness of 600 nm, and corrugation depth of 3 ㎛ with two corrugations was successfully fabricated using the prepared device.

Studies on chemical wet etching of GaN (GaN계 질화합물 반도체의 습식식각 연구)

  • 윤관기;이성대;이일형;최용석;유순재;이진구
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.398-400
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    • 1998
  • In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

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Fabrication of gate electrode for OTFT using screen-printing and wet-etching with nano-silver ink

  • Lee, Mi-Young;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.889-892
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    • 2009
  • We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

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The Optimization of Indium Zinc Oxide Thin Film Process in Color Filter on Array structure

  • Lee, Je-Hun;Kim, Jin-Suek;Jeong, Chang-Oh;Kim, Shi-Yul;Lim, Soon-Kwon;Souk, Jun-Hyung
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.1244-1247
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    • 2004
  • For obtaining the best panel quality of color filter on array(COA) architecture in TFF LCD, we investigated the influence of deposition temperature, $O_2$ flow, thickness on the optical transmittance, wet etching and adhesion properties of IZO deposited onto each color photo resist(red, green, blue). Average transmittance of the pixel single layer in the visible range(between 380 and 780nm) was mainly affected by thickness and showed maximum at 1250 ${\AA}$ while the thickness showing peak transparency in each R, G, B wavelength was different. The relation was calculated by using bi-layer transmission and reflectance model, which corresponded to experimental data very well. The adhesion of IZO deposited on each color PR was found to have enhanced value except red PR case, compared to that of IZO which was deposited on $SiN_x$. Wet etching pattern linearity was decreased as the thickness increased. The thickness of IZO was one of vital factors in order to optimize overall pixel process for fabricating COA structure.

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Physical and Electrical Characteristics of Wet Oxidized LPCVD Silicon Nitride Films (습식 산화한 LPCVD Silicon Nitride층의 물리적, 전기적 특성)

  • Lee, Eun-Gu;Park, Jin-Seong
    • Korean Journal of Materials Research
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    • v.4 no.6
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    • pp.662-668
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    • 1994
  • The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.

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Study of Meniscus Formation in a Double Layer Slot Die Head Using CFD (CFD를 이용한 Double Layer 슬롯 다이 헤드의 메니스커스 형성 연구)

  • Gieun Kim;Jongwoon Park
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.65-70
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    • 2024
  • Using a computational fluid dynamics(CFD) simulation tool, we have provided a coating guideline for slot-die coating with a double layer slot die head. We have analyzed the fluid dynamics in terms of the coating speed, flow rate ratio, and viscosity ratio, which are critical for the stability of coating meniscus. We have identified the common coating defects such as break-up, air entrainment, and leakage by varying the coating speeds. The flow rate ratio is the critical parameter determining the wet film thickness of the top and bottom layers. It is shown that when the flow rate ratio exceeds or equals 1.8, air entrainment occurs due to insufficient hydraulic pressure in the bottom layer, even though the total flow rate remains constant. Furthermore, we have found that the flow of the bottom layer is significantly affected by the viscosity of top layer. The viscosity ratio of 4 or higher obstructs the flow of the bottom layer due to the increased hydraulic resistance, resulting in leakage. Finally, we have demonstrated that as the viscosity ratio increases from 0.1 to 10, the maximum coating speed rises from 0.4 mm/s to 1.6 mm/s, and the minimum wet film thickness decreases from 800 ㎛ to 200 ㎛.

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Characteristics and Formation of Thermal Oxidative Film Silicon Carbide for MOS Devices (MOS 소자용 Silicon Carbide의 열산화막 생성 및 특징)

  • O, Gyeong-Yeong;Lee, Gye-Hong;Lee, Gye-Hong;Jang, Seong-Ju
    • Korean Journal of Materials Research
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    • v.12 no.5
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    • pp.327-333
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    • 2002
  • In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.