• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.314-322
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• 1997

The thin film processing and the applicability as a IMD material of SiO2 aerogels providing ultralow dielec-tric properties were studied. The SiO2 aerogel films with 0.5g/㎤ density (78% porosity) and 4000~21000$\AA$ thickness could be prepared at 25$0^{\circ}C$ and 1160 psig by supercritical drying of wet-gel films, which were spin-coated at the spin rate of 1000~7000 rpm on p-Si(111) wafer under the isopropanol atmosphere. The optimum viscosity of polymeric SiO2 sols for spin coating was in the range of 10~14 cP. The main fac-tors being able to control the film thickness and microstructures were found to be sol concentration, spin rpm, and aging time of wet-gel films. The dielectric constant of the SiO2 aerogel thin film was around 2.0 low enough to be applied to the next generation semiconductor device beyond the giga level.

• Advances in concrete construction
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• v.2 no.3
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• pp.209-227
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• 2014

The use of limestone fines (LF) in mortar and concrete can in certain ways improve performance and thus has become more and more commonplace. However, although LF is generally regarded as a filler, it is up to now not clear how much filling effect it could have and how best the filling effect could be utilized. Herein, the packing density and filling effect of LF were studied by measuring the packing densities of LF, (LF + cement) blends and (LF + cement + fine aggregate) blends under dry and wet conditions, and measuring the performance of mortars made with various amounts of LF added. It was found that the addition of LF would not significantly increase the packing density of (LF + cement) blends but would fill into the paste to increase the paste volume and paste film thickness, and improve the flow spread and strength of mortar.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.220-224
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• 2016

Anti-reflection (AR) thin films were fabricated on a glass substrate by using an ultrasonic spray. Glycidoxypropyl trimethoxysilane (GPTMS) and tetraethyl orthosilicate (TEOS) were used to synthesize a sol-gel hybrid coating solution. The moving speed of spray nozzle was changed from 15~25 mm/s to control the coating thickness of AR thin film. As the moving speed of spray nozzle increased, the thickness of AR thin film decreased from 138 nm to 86 nm. When the AR thin film was fabricated by nozzle moving speed of 20 mm/s, the refractive index and thickness of AR thin film was measured to be 1.31 and 104 nm, respectively. The average reflectance and transmittance of AR thin film coating glass was measured to be 0.75 % and 94 %, respectively into the visible light range of 380~780 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1224-1231
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• 2003

This paper reports on the air-gap type thin film bulk acoustic wave resonator(FBAR) using ultra thin wafer with thickness of 50$\mu\textrm{m}$. It was fabricated to realize a small size devices and integrated objects using MEMS technology for flexible microsystems. To reduce a error of experiment, MATLAB simulation was executed using material characteristic coefficient. Fabricated thin FBAR consisted of piezoelectric film sandwiched between metal electrodes. Used piezoelectric film was the aluminum nitride(AlN) and electrode was the molybdenum(Mo). Thin wafer was fabricated by wet etching and dry etching, and then handling wafer was used to prevent damage of FBAR. The series resonance frequency and the parallel frequency measured were 2.447㎓ and 2.487㎓, respectively. Active area is 100${\times}$100$\mu\textrm{m}$$^2$.Q-factor was 996.68 and K$^2$$\_$eff/ was 3.91％.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.3
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• pp.144-151
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• 2003

IPMC(Ionic Polymer-Metal Composite) is promising candidate material for bio-related actuators mainly due to its biocompatibility and wet and soft properties. The widely used commercialized Nafion film has a few kinds of fixed thicknesses but more various film thicknesses are required for extensive applications. Especially for the enhanced force as an actuator, the thick film is essential. Various Nafion films with thickness of 0.4-1.2mm have been prepared by casting of liquid Nafion. Also, IPMC actuators using casted Nafion films have been fabricated and the basic mechanical properties such as stiffness, displacement and force were measured and analyzed. These results can be used for the optimized design of actuators for different applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.594-594
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• 2012

Al doped ZnO (AZO) thin films were deposited on textured glass substrate by magnetron sputtering method. Also, AZO films on textured glass were etched by hydrochloric acid (HCl). Average thickness of etched AZO films are 90 nm. We observed morphology of AZO film by AFM with various etchant concentration and etching time. Etched AZO films have low resistivity and high haze. The surface RMS roughness of AZO film was increased from 53.8 nm to 84.5 nm. The haze ratio was also enhanced in above 700 nm of wavelength due to light trapping effect was increased by rough AZO surface. The etched AZO films on textured glass are applicable to fabricate solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.232.2-232.2
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• 2014

Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.192-193
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• 2006

The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The $Hgl_2$ semiconductor was shown in much lower dark current than the others, but the best sensitivity. In this paper, reactivity and combination character of semiconductor and binder material that affect electrical and X-ray detection properties would prove out though experimental results.

• Journal of the Korean Chemical Society
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• v.63 no.2
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• pp.94-101
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• 2019

Nb, Mo-doped and Nb/Mo-codoped $VO_2(M)$ nanocrystallites with various doping levels were synthesized for the first time by a hydrothermal and post thermal transformation method. The reversible phase transition characteristics of those doped $VO_2(M)$ was comparatively investigated. Nb-doping of $VO_2(M)$ by this method resulted in a very efficient lowering of the transition temperature ($T_c$) with a rate of $-16.7^{\circ}C/at.%$ that is comparable to W-doping, while Mo-doping did not give a serious reduction of $T_c$ with only a rate of $-5.1^{\circ}C/at.%$. Nb/Mo-codoping gave a similar result to Nb-doping without a noticeable difference. The thin films of Nb-doped and Nb/Mo-codoped $VO_2(M)$ with a thickness of ca. 120 nm were prepared by a wet-coating of the nanoparticle-dispersed solutions. Those films showed a good thermochromic modulation of near infrared radiation with 30-35% for Nb-doped $VO_2(M)$ and 37-40% for Nb/Mo-codoped ones. Nb/Mo-codoped $VO_2(M)$ film showed slightly enhanced thermochromic performance compared with Nb-doped $VO_2(M)$ film.