Study on Characteristic difference of Semiconductor Radiation Detectors fabricated with a wet coating process

  • Choi, Chi-Won (Department of Medical Imaging Sciense in Inje University) ;
  • Cho, Sung-Ho (Dept. of Biomedical Engineering in Inje University) ;
  • Yun, Min-Suk (Dept. of Biomedical Engineering in Inje University) ;
  • Kang, Sang-Sik (Radiation Image Lab in Inje University) ;
  • Park, Ji-Koon (Medical Imaging Research Center in Inje University) ;
  • Nam, Sang-Hee (Medical Imaging Research Center in Inje University)
  • Published : 2006.06.22

Abstract

The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The $Hgl_2$ semiconductor was shown in much lower dark current than the others, but the best sensitivity. In this paper, reactivity and combination character of semiconductor and binder material that affect electrical and X-ray detection properties would prove out though experimental results.

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