• Journal of the Korean Society for Precision Engineering
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• v.21 no.4
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• pp.32-38
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• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• Laser Solutions
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• v.12 no.3
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• pp.1-6
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• 2009

This paper describes the method for the fabrication of micro dot array on a plastic mold steel using DPSS (diode pumped solid-states) UV laser and wet etching process. We suggest the process of the ablation of a photoresist (PR) coated on plastic mold steel and wet etching process using solutions of various concentrations of $FeCl_3$, $HNO_3$ in water as etchant. This method makes it possible to fabricate metallic roller mold because the microstructures are directly fabricated on the metal surface. In the range of operating conditions studied, $17\;{\mu}J$ laser pulse energy and 50 ms laser exposure time, an etchant containing 40wt% $FeCl_3$, 5wt% $HNO_3$ and etch time for 45 s gave the $10\;{\mu}m$ of micro dot pattern on plastic mold steel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.19-20
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• 2006

Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.225-228
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• 2005

The purpose of this study is to investigate effects of the plastic/elastic deformation energy on wet etching characterization on the surface of material by using the nanoindentation and HF wet etching technique. Indents were made on the surface of Pyrex 7740 glass by the hyperfine indentation process with a Berkovich diamond indenter, and they were etched in $50\;wt\%$ HF solution. After etching process, convex structure was obtained due to the deformation-induced hillock phenomena. In this study, effects of indentation process parameters (normal load, loading rate) on the morphologies of the indented surfaces after isotopic etching were investigated from an angle of deformation energies.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.156-156
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• 2009

High efficiency silicon solar cell technology based on planar technology has been improved by various kinds of process by using the wet etching process. In particular, the buried contact solar cell has been successfully studied. In the present work, a simplified process of the buried contact solar cell has been suggested to help one design effectively the high-efficiency solar cell.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.171-171
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• 2012

In this study, we fabricated the high-brightness AlGaInP-based red light emitting diodes (LED)s using by direct printing technique and inductive coupled plasma (ICP) reactive ion etching (RIE). In general, surface roughening was fabricated by wet etching process to improve the light extraction efficiency of AlGaInP-based red LED. However, a structure of the surface roughening, which was fabricated by wet etching, was tiled cone-shape after wet etching process due to crystal structure of AlGaInP materials, which was used as top-layer of red LED. This tilted cone-shape of surface roughening can improve the light extraction of LED, but it caused a loss of the light extraction efficiency of LED. So, in this study, we fabricated perfectly cone shaped pattern using direct printing and dry etching process to maximize the light extraction efficiency of LED. Both submicron pattern and micron pattern was formed on the surface of red LED to compare the enhancement effect of light extraction efficiency of LEDs according to the diameter of sapphire patterns.After patterning process using direct printing and ICP-RIE proceeded on the red LED, light output was enhanced up to 10 % than that of red LED with wet etched structure. This enhancement of light extraction of red LED was maintained after packaging process. And as a result of analyze of current-voltage characteristic, there is no electrical degradation of LED.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.831-833
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• 2008

150 nm thick Ga-doped ZnO thin film, which was deposited by a sputtering process, was wet-chemically etched by using various organic acids such as oxalic, citric and formic acid. Wet etch parameters including etchant concentration and temperature are investigated for each etchant, and their effects on the etch rate and the feature of edge line are compared.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2221-2225
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• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.17-21
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• 2016

EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.889-892
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• 2009

We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.