• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.224-224
• /
• 2012

For decades, carbon fiber has expanded their application fields from reinforced composites to energy storage and transfer technologies such as electrodes for super-capacitors and lithium ion batteries and gas diffusion layers for proton exchange membrane fuel cell. Especially in fuel cell, water repellency of gas diffusion layer has become very important property for preventing flooding which is induced by condensed water could damage the fuel cell performance. In this work, we fabricated superhydrophobic network of carbon fiber with high aspect ratio hair-like nanostructure by preferential oxygen plasma etching. Superhydrophobic carbon fiber surfaces were achieved by hydrophobic material coating with a siloxane-based hydrocarbon film, which increased the water contact angle from $147^{\circ}$ to $163^{\circ}$ and decreased the contact angle hysteresis from $71^{\circ}$ to below $5^{\circ}$, sufficient to cause droplet roll-off from the surface in millimeter scale water droplet deposition test. Also, we have explored that the condensation behavior (nucleation and growth) of water droplet on the superhydrophobic carbon fiber were significantly retarded due to the high-aspect-ratio nanostructures under super-saturated vapor conditions. It is implied that superhydrophobic carbon fiber can provide a passage for vapor or gas flow in wet environments such as a gas diffusion layer requiring the effective water removal in the operation of proton exchange membrane fuel cell. Moreover, such nanostructuring of carbon-based materials can be extended to carbon fiber, carbon black or carbon films for applications as a cathode in lithium batteries or carbon fiber composites.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.262-262
• /
• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Journal of the Korean Vacuum Society
• /
• v.22 no.3
• /
• pp.150-155
• /
• 2013

Textured surface has been fabricated to reduce the light reflectance from the solar cells. The textured surface is very suitable for the multi-junction III-V solar cells because it can decrease the light reflectance over a large wavelength range. In this study, we have generated a textured structure on InAlP which is used for the window layer of the multi-junction III-V solar cells. Ultra-thin Pt layer (0.7 nm) has been used for wet etching mask. An array of nanosized pyramid shape formed on InAlP surface dramatically reduces the light reflectance up to 13.7% over a large wavelength range (i.e., $0.3{\sim}1.5{\mu}m$).

• Journal of the Korean Vacuum Society
• /
• v.20 no.1
• /
• pp.63-69
• /
• 2011

In this study, we report on the novel lithographic patterning method to fabricate organic thin film field effect transistors (OTFTs) based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30 nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce $Al_2O_3$ film grown via atomic layer deposition method onto pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated micron sized pentacene FETs and measured their electrical characteristics.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.16.1-16.1
• /
• 2011

$TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.10
• /
• pp.106-112
• /
• 1990

The progress of oxidation of a porous silicon layer(PSL) was studied by examining the temperature dependence of the oxidation and the infrared absorption spectra. Thick OPSL(oxidized porous silicon layer). which has the same properties as thermal $SiO_{2}$ of bulk silicon, is formed in a short time by two steps wet oxidation of PSL at $700^{\circ}C$, 1 hr and $1100^{\circ}C$, 1 hr. Etching rate, breakdown strength of the OPSL are strongly dependent on the oxidation temperature, oxidation atmosphere. And its breakdown field was ${1\MV/cm^-2}$ MV/cm The oxide film stress was determined through curvature measurement using a dial gauge. During oxidation at temperature above $1000^{\circ}C$ in dry $O_{2}$, stress on the order of ${10^9}\dyne/{cm^2}{-10^10}\dyne/{cm^2}$ are generated in the OPSL.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.518-523
• /
• 1999

In thi, study, we made experiments to fonn a mesa shape by meltback method with various concentration of solutions and found that unsaturated (20%) InGaAsP (1.55 !-tm) solution at a growth temperature was the most suitable for the formation of a mesa ,hape on the wafer which has an InGaAsP active layer and an InP cap layer on an n-InP substrate. It was difficult to form a proper mesa shape for the fabrication of PBH-LDs only by the meltback method; therefore, we fabricated PBH-LDs by forming the mesa shape with the meltback method after wet etching and by growing a current-blocking layer successively. As the electrical and optical charaleri,tiecs of MQW-PBH-LDs fabricated by above methods, when the cavity length was $300{\mu}m$, the threshold current was about 10 mA, internal quantum efficiency 82%, internal loss $9.2cm^{-1}$, and characteristic temperature was 65 K at $25~45^{\circ}C$ and 42 K at $45~65^{\circ}C$. /TEX>.

• Journal of Sensor Science and Technology
• /
• v.13 no.2
• /
• pp.128-132
• /
• 2004

Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxy (MOVPE) grown n- on p- HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and ZnS surface passivatlon. ZnS was thermally evaporated from effusion cell in an ultra high vacuum (UHV) chamber. The main features of the ZnS deposited from effusion cell in UHV chamber are low fixed surface charge density, and small hysteresis. It was found that a negative flat band voltage with -0.6 V has been obtained for Metal Insulator Semiconductor (MIS) capacitor which was evaporated at $910^{\circ}C$ for 90 min. Current-Voltage (I-V) and temperature dependence of the I-V characteristics were measured in the temperature range 80 - 300 K. The Zero bias dynamic resistance-area product ($R_{0}A$) was about $7500{\Omega}-cm^{2}$ at room temperature. The physical mechanisms that dominate dark current properties in the HgCdTe photodiodes are examined by the dependence of the $R_{0}A$ product upon reciprocal temperature. From theoretical considerations and known current expressions for thermal and tunnelling process, the device is shown to be diffusion limited up to 180 K and g-r limited at temperature below this.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.4
• /
• pp.38-44
• /
• 2000

In this paper, we have been fabricated λ/2 phase plates lot an optical pick-up using a blue violet laser diode by employing proton exchange and wet etching in LiNbO$_{3}$. Their functions and fabrication processes are described in detail. It is established the optimal fabrication conditions through the experimental results. The device characteristics are measured by the Mach-zender interferometer which is composed of the optical components and 632.8nm He-Ne laser. The measured phase error was ＋5$^{\circ}$~ -6$^{\circ}$(within 3%). This phase plate could be applied an useful device to improve the resolution and the stability of the optical pick-up which has a blue violet laser diode as an optical source.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.276-276
• /
• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.