• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.391-396
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• 2008

In this paper, we proposed the new rectangular waveguide-NRD waveguide transition in which the transition function about the standard waveguide is built in within the NRD waveguide ifself. The newly proposed rectangular waveguide-NRD waveguide transition was realized use of NRD waveguide input/output side wall thickness and hole width. In the case of the wall thickness, it was nearly identical with the half of the NRD waveguide guide wavelength and the width of an hole was nearly coincide with the length of the long side of the standard waveguide connected with the NRD waveguide. This kind of the principles is applicable to be unrelated with the frequency band. In this paper, it made in 38 GHz band with the rectangular waveguide-NRD waveguide transition and the feasibility was confirmed. In the back-to-back structure, the rectangular waveguide-NRD waveguide transition manufactured in 38 GHz band has the insertion loss less than 0.4 dB and also has the return loss less than 20 dB.

• ETRI Journal
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• v.32 no.2
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• pp.195-203
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• 2010

A new vertical transition between a substrate integrated waveguide in a low-temperature co-fired ceramic substrate and an air-filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air-filled waveguide. Physical characteristics of an air-filled WR-22 to WR-22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a -1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back-to-back module. A 40 GHz low-temperature co-fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm ${\times}$ 28 mm ${\times}$ 3.3 mm.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.171-175
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• 2012

In this work, a new microstrip-to-substrate integrated waveguide (SIW) transition using the parallel half-mode substrate integrated waveguide (HMSIW) is proposed. The proposed transition consists of three sections : a microstrip, parallel HMSIWs, and an SIW. By inserting the parallel HMSIWs section between the microstrip section and the SIW section, the proposed transition can improve the return loss characteristics of the near cut-off frequency because the HMSIWs section has a lower cut-off frequency than the SIW section (8.6 GHz). The lower cut-off frequency is achieved through gradual electromagnetic field mode changes for a low reflection. The measured return loss is less than 20 dB in the of 9.1~16.28 GHz freqeuncy range for the back-to-back transition. The measured insertion loss is within 1.6 dB for the back-to-back transition. The proposed transition is expected to play an important role in wideband SIW circuits fed by a microstrip.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.211-214
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• 2002

In this paper, we present a simple method for characterizing a rectangular waveguide to circular waveguide transition Three standard loads consisting of a short circuit, an offset short circuit 1, and an offset short circuit 2 are sequentially connected to the circular waveguide port and the reflection coefficient at port 1 Is measured for each case. From known reflection coefficients, of standard loads and measured reflection coefficients, the scattering matrix of the transition Is obtained. The proposed method Is verified by the numerical experiment using a commercial software HFSS and by measurments of a actual rectangular-to-circular waveguide transition.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.4
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• pp.29-34
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• 2023

A clear and efficient design method for a microstrip-to-waveguide inline transition, which is based on an analytical model, is presented. The transition consists of three parts: a microstrip-to-SIW transition, a dielectric-loaded waveguide with substrate-height, and a stepped-height waveguide. The shape of the transitional structure is formed for impedance matching. Two equivalent type0s of dielectric-loaded transitional structures are proposed. The design method is applicable to any size of the waveguide, but a design method of two Ka-band transitions is demonstrated. The proposed transitions, in a back-to-back configuration, have less than 1.2 dB insertion loss and more than 15 dB return loss from 29.8 GHz to 38.2 GHz.

• Journal of electromagnetic engineering and science
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• v.17 no.1
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• pp.29-33
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• 2017

This paper proposes a half-mode substrate integrated waveguide (HMSIW) amplifier using lumped-element transition. The input and output impedances of this amplifier are matched by the lumped-element transition structure. This structure provides compact impedance and mode matching circuits between the HMSIW and a stand-alone amplifier. Surface mount technology inductors and capacitors are implemented to realize the lumped-element transition. A prototype of the proposed HMSIW amplifier shows 15 dB gain with 3 dB bandwidth of 4 to 7.05 GHz in a simulation and measurement.

• The Journal of the Korea institute of electronic communication sciences
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• v.19 no.1
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• pp.19-24
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• 2024

In this paper, in order to realize lower cut-off frequency of the waveguide, the folded Ridge waveguide (FRWG) is suggested by alternating T-shape structure in the conventional folded waveguide with Y-shape structure. Suggested FRWG can be equivalent by the reverse Ridge waveguide. As the height of side of the FRWG is lower, the width of side is increased. Therefore, the cut-off frequency of the FRWG can be decreased more than half compared with conventional waveguide. The FRWG is designed with the length, height, and width of Y-shape structure of 40mm, 20mm, and 2mm, respectively. Designed FRWG has the cut-off frequency of the 1.996GHz. Also, the transition between the FRWG and SMA connector is designed. The transition is optimized by the capacitance of the signal line of the connector. Its result shows the VSWR under 2:1 in the band of 2.064 ~ 3.050 GHz. Suggested FRWG can be applied with miniaturization of various waveguide devices.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.7
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• pp.67-71
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• 2008

We report the waveguide to microstrip transition using probe structure for Ka-band transceiver. The waveguide to microstrip transition is composed of probe, inductive line, ${\lambda}/4$ impedance transformer, and $50{\Omega}$ microstrip line. For design of the transition, we optimized the characteristic impedances and the lengths of the component parts. The fabricated transition exhibits an insertion loss of 1.3 dB and the input/output return losses of below 14 dB between 30 and 40 GHz. The insertion loss of each transition is about $0.5{\sim}0.6dB$, considering the losses in the microstrip line and input/output waveguides.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.445-450
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• 2002

We analyzed and measured a CPW(coplanar waveguide)-to-microstrip right-angled transition. Asymmetric CPW-to-microstrip transitions show significant resonances by the slot mode generation at the discontinuities. The air-bridge just shifting the resonance frequency can not fundamentally suppress the occurrence of the slot mode. So, we proposed the structure using offset microstrip section to eliminate the resonance. The proposed structure may be useful for the application of multi-layed structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.1
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• pp.54-59
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• 2019

In this paper, we report on the waveguide-to-microstrip transition with an inline structure for the millimeter band. The waveguide-to-microstrip transition comprises a probe, an inductive line, a ${\lambda}/4$ impedance transformer, and a 50-ohm microstrip line. For the transition design, we optimized the characteristic impedances and lengths of the component parts. The fabricated transition exhibits an insertion loss of 2.1 dB and an input/output return loss of below 13 dB at a millimeter band frequency of 94 GHz.