• KSCE Journal of Civil and Environmental Engineering Research
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• v.37 no.1
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• pp.217-229
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• 2017

The high-frequency electro-mechanical signatures, which are excited and received by piezoelectric wafers mounted on a beam, are sensitive to incipient defect in a beam. Predicting the sensing range of the piezoelectric wafers is needed to effectively conduct damage assessment of a beam through utilizing their advantage. Damping of a beam plays the most important role in determining the sensing range among other features. This paper has proposed a scheme for estimating high-frequency damping of a beam through electro-mechanical signatures of piezoelectric wafers mounted on the beam. Considering damping effect while resonance of a beam evolves, wave perspective is adopted to formulate the electro-mechanical signatures of piezoelectric wafers. The damping of a beam is estimated through the least squares method minimizing the difference between the calculated and the measured damping ratio function values which are obtained from formulated and measured electro-mechanical signatures, respectively. The validity of the proposed scheme has been demonstrated through numerical and experimental examples using an aluminum beam with collocated piezoelectric wafers.

• Journal of the Korean Solar Energy Society
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• v.40 no.5
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• pp.35-45
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• 2020

Photovoltaic (PV) power system prices have been steadily dropping in recent years due to their mass production and advances in relevant technology. Crystalline silicon (c-Si wafers) account for the largest share of the price of solar cells; reducing the thickness of these wafers is an essential part of increasing the price competitiveness of PV power systems. However, reducing the thickness of c-Si wafers is challenging; typically, phenomena such as bowing and cracking are encountered. While several approaches to address the bowing phenomenon of the c-Si solar cells exist, the only method to study the crack phenomenon (related to the strength of the c-Si solar cells) is the bending test method. Moreover, studies on determining the strength properties of the solar cells have focused largely on c-Si wafers, while those on the strength properties of front and rear-side electrodes and SiNx, the other components of c-Si solar cells, are scarce. In this study, we analyzed the strength characteristics of each layer of c-Si solar cells. The strength characteristics of the sawing mark direction produced during the production of c-Si wafers were also tested. Experiments were conducted using a 4bending tester for a specially manufactured c-Si solar cell. The results indicate that the back side electrode is the main component that experienced bowing, while the front electrode was the primary component regulating the strength of the c-Si solar cell.

• Polymer(Korea)
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• v.26 no.5
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• pp.670-679
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• 2002

1,3-bis(2-chloroethyl)-1-nitrosourea (BCNU, carmustine) is one of the effective chemotherapeutic agents which has been used clinically for treating malignant glioma. Poly(D,L-lactide-co-glycolide) (PLGA, molecular weight: 20000 g/mole. mole ratio of lactide to glycolide 75 : 15) is a well known biodegradable polymer used as a drug carrier for drug delivery system. In this study, we investigated the BCNU release behaviour of BCNU-loaded PLGA wafers containing poly (N-vinylpyrrolidone) (PVP) or polyethyleneoxide (PEO) and the effect of hydrophilic polymers incoporated in the wafers. BCNU-loaded PLGA microparticles with or without hydrophilic polymers were prepared by a spray drying method and fabricated into wafers by direct compression. Encapsulation efficiency of BCNU-loaded PLGA microparticles containing PVP and PEO was 85 ∼ 97% and crystallinity of BCNU encapsulated in PLGA decreased significantly initial release amount and release rate of BCNU increased with the increasing PVP or PEO amount. Morphological change and mass loss of wafers during the release test were confirmed that hydration and degradation of PLGA would be facilitated with an increase of hydrophilic polymers.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.16 no.5
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• pp.475-481
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• 2004

This paper presents a force model of the clean tube system, which was developed as a means of transferring air-floated wafers inside a closed tube filled with super clean air. The recovering force from the holes for floating wafers is modeled as a linear spring and thus the wafers motion is modeled as a mass-spring-damper system. The propelling forces are modeled as linear along with the wafer location. The paper also proposes a control method to emit and stop a wafer at the center of a control unit. It reveals the minimum value of the propelling force to leave from the control unit. In order to stop the wafer, it utilizes the exact time when the wafer arrives at the position to activate the propelling force. Experiments with the clean tube system built for the 12 inch wafer shows the validity of the proposed model and the algorithm.

• IE interfaces
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• v.23 no.3
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• pp.229-238
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• 2010

Virtual metrology (VM), a critical component of semiconductor manufacturing, is an efficient way of assessing the quality of wafers not actually measured. This is done based on a model between equipment sensor data (obtained for all wafers) and the quality characteristics of wafers actually measured. This paper considers principal component regression (PCR), partial least squares regression (PLSR), kernel PCR (KPCR), and kernel PLSR (KPLSR) as VM models. For each regression model, two cases are considered. One utilizes all explanatory variables in developing a model, and the other selects significant variables using the genetic algorithm (GA). The prediction performances of 8 regression models are compared for the short- and long-term etch process data. It is found among others that the GA-KPLSR model performs best for both types of data. Especially, its prediction ability is within the requirement for the short-term data implying that it can be used to implement VM for real etch processes.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1501_1502
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• 2009

Plasma treatment time was optimized to maximize the bonding strength between silicon and quartz. Bonding strength between the silicon and quartz is related to a surface energy which can be calculated by contact angle measurement. It was found that optimized time to get maximized surface energy was 15 sec. Silicon and quartz wafers were treated with $O_2$ plasma under different time splits and then bonded together. Bonding strength of the bonded wafers was measured by shear test. It was verified that the highest bonding strength was obtained when the silicon and quartz wafers were treated for 15 seconds. The maximum bonding strength exceeded the fracture strength of silicon.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.29-33
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• 2003

Tri-crystalline silicon wafers have three different orientations and three-grain boundaries. In this paper, tri-crystalline silicon (tri-Si) wafers have been used for the fabrication of buried contact solar cells. The optical and micro-structural properties of these cells after texturing in KOH solution have been investigated and compared with those of cast mult- crystalline silicon (multi-Si) wafers. We employed a cost effective fabrication process and achieved buried contact solar cell (BCSC) energy conversion efficiencies up to $15\%$ whereas the cast multi-Si wafer has efficiency around $14\%$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.81-84
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• 1995

A reliable bonding between two silicon wafers, regularly grooved and non-grooved, was done by the direct boning technology, It is Presented that high structural duality was realized not only at the bended interface but in the bulk, commensurate with the filling of artificial grooves, which would be attributed to the dislocation-gettering capability of groove free-surfaces during annealing. The groove filling would be explained with mass-transport phenomena assisted by the dislocation movement from initial contact boundaries toward groove surfaces. Intrinsic voids can be easily removed by aid of the grooves. The proposed method yielded also an intimate bonding not only between {111} wafers strongly misoriented and slightly inclined to {111} basal plane but even between {111} and {100} orientation wafers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.