• Title/Summary/Keyword: wafer bonding

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Fabrication of High-Temperature Si Hall Sensors Using Direct Bonding Technology (직접접합기술을 이용한 고온용 Si 홀 센서의 제작)

  • Chung, G.S.;Kim, Y.J.;Shin, H.K.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1431-1433
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    • 1995
  • This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

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Analysis of Crystallinity and Electrical Characteristics of Oxide Semiconductor of ZnO in Accordance with Annealing Methods (ZnO의 열처리방법에 따른 전기적인 특성의 변화와 결정성)

  • Oh, Teresa
    • Korean Journal of Materials Research
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    • v.27 no.5
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    • pp.242-247
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    • 2017
  • ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

Lateral Structure Transistor by Silicon Direct Bonding Technology (실리콘 직접접합 기술을 이용한 횡방향 구조 트랜지스터)

  • 이정환;서희돈
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.759-762
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    • 2000
  • Present transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area, consequently have disadvantage for high speed switching performance. In this paper, a horizontal structure transistor which has minimized parasitic capacitance in virtue of SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics were designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance was proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed horizontal structure transistor was certified through the VCE-lC characteristics curve, $h_{FE}$ -IC characteristics, and GP-plot.

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A study on glass/glass wafer bonding and bonding strength for micro fluidic device (미세유체소자용 유리/유리 웨이퍼 접합 및 접합강도 평가)

  • Shin, Kyu-Sik;Park, Jun-Shik;Jang, Suk-Won;Park, Hyo-Derk;Kang, Sung-Goon;Song, Young-Hwa
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1917-1919
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    • 2003
  • 본 연구에서는 바이오 및 환경 분야에 적용 가능한 미세 유체소자 제작에 있어서 4" 유리 / 유리 웨이퍼접합을 시도하였으며, 접합결과 90%이상의 접합면적을 보였다. 접합된 샘플을 산 및 알카리 조건에 따른 인장시험결과 모든 조건에서 약 $2kgf/mm^2$ 이상의 접합강도를 보였으며 파괴는 접합면이 아닌 모재에서 발생되었다. 또한 미세유체소자 제작에 있어서 초음파를 이용하여 유리를 가공하였으며, 폭 $300{\mu}m$, 깊이 $200{\mu}m$의 미세채널을 제작하였다.

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Development of Linear Annealing Method for Silicon Direct Bonding and Application to SOI structure (실리콘 직접 접합을 위한 선형가열법의 개발 및 SOI 기판에의 적용)

  • 이진우;강춘식;송오성;양철웅
    • Journal of the Korean institute of surface engineering
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    • v.33 no.2
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    • pp.101-106
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    • 2000
  • SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

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Single-Crystal Silicon Thin-Film Transistor on Transparent Substrates

  • Wong, Man;Shi, Xuejie
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1103-1107
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    • 2005
  • Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

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Bonding Wafer Inspection Using Laser Beam Transmission Modeling (레이저빔 투과 모델링을 이용한 본딩 웨이퍼 검사)

  • Lim, Young-Hwan;Yang, Si-Eun;Jang, Dong-Young;Hong, Suk-Ki
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.555-556
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    • 2008
  • 본 연구에서는 레이저빔 투과를 이용한 본딩 웨이퍼 검사 방법을 제안하고 검사 장치를 설계 구현하였다. 1064nm 파장에서의 정상웨이퍼를 일정한 비율로 투과 하였다. 본딩 불량으로 인한 웨이퍼의 기공은 두께에 따라 투과율이 현저하게 변화하여 기공 부분을 검출하였다. 이러한 기공은 두께의 변화가 있으며 광량의 변화하는 부분이 에어갭으로 인식 카메라로 쉽게 구분이 가능하였다.

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Fabrication of Electro-optical Microlens Using Micromachining Technology (마이크로머시닝 기술을 이용한 전자 광학 렌즈의 제작)

  • Lee, Yong-Jae;Chun, Kuk-Jin
    • Proceedings of the KIEE Conference
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    • 1996.11a
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    • pp.413-415
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    • 1996
  • This paper presents a technique for fabricating an electro-optical microlens for microcolumn e-beam system. The device, named Self-Aligned Microlens (SAM) was realized by mixing surface and bulk micromachining technology. The microbridges were formed on both sides of silicon wafer symmetrically. The alignment error between the electrodes could be controlled within a few micrometers with also reducing the numbers of anodic bonding.

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Hydrogen-Bonding Induced Alternating Thin Films of Dendrimer and Block Copolymer Micelle

  • Park, Chi-Young;Rhue, Mi-Kyo;Im, Min-Ju;Kim, Chul-Hee
    • Macromolecular Research
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    • v.15 no.7
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    • pp.688-692
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    • 2007
  • The hydrogen-bonding induced alternating multilayer thin films of dendrimers and block copolymer micelles were demonstrated. The block copolymer micelles derived from amphiphilic poly(2-ethyl-2-oxazoline)block-$poly({\varepsilon}-carprolactone)$ (PEtOz-PCL) in aqueous phase have a core-shell structure with a mean hydrodynamic diameter of 26 nm. The hydrogen bonding between the PEtOz outer shell of micelle and the carboxyl unit of poly(amidoamine) dendrimer of generation 4.5 (PAMAM-4.5G) at pH 3 was utilized as a driving force for the layerby-layer alternating deposition. The multilayer thin film was fabricated on the poly(methyl methacrylate) (PMMA) thin film spin-coated on silicon wafer or glass substrate by the alternate dipping of PEtOz-PCL micelles and PAMAM dendrimers in aqueous solution at pH 3. The formation of multilayer thin film was characterized by using ellipsometry, UV-vis spectroscopy, and atomic force microscopy. The PEtOz outer shell of PEtOz-PCL micelle provided the pH-responsive hydrogen bonding sites with peripheral carboxylic acids of PAM AM dendrimer. The multilayer thin film was reversibly removed after dipping in aqueous solution at $pH{\geq}5.6$ due to dissociation of the hydrogen bonding between PEtOz shell of PEtOz-PCL micelle and peripheral carboxyl units of PAMAM dendrimer.

Effects of DC Substrate Bias Power Sources and Reactant Gas Ratio on Synthesis and Tribological Properties of Ternary B-C-N Coatings (기판 바이어스 DC 전원의 종류와 반응가스 분압비가 3성분계 B-C-N 코팅막의 합성과 마찰 특성에 미치는 영향)

  • Jeong, Da-Woon;Kim, Doo-In;Kim, Kwang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.44 no.2
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    • pp.60-67
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    • 2011
  • Ternary B-C-N coatings were deposited on Si(100) wafer substrate from $B_4C$ target by RF magnetron sputtering technique in $Ar+N_2+CH_4$ gas mixture. In this work, the effect of reactant gas ratio, $CH_4/(N_2+CH_4)$ on the composition, kinds and amounts of bonding states comprising B-C-N coatings were investigated using two different bias power sources of continuous and unipolar DCs. In addition, the tribological properties of coatings were studied with the composition and bonding state of coating. It was found that the substrate bias power had an effect on chemical composition, and all of the obtained coatings were nearly amorphous. Main bonding states of coatings were revealed from FTIR analyses to be h-BN, C-C, C-N, and B-C. The amount of C-C bonging mainly increased with increase of the reactant gas ratio. From our studies, both C-C and h-BN bonding states improved the tribological properties but B-C one was found to be harmful on those. The best coating from tribological points of view was found to be $BC_{1.9}N_{2.3}$ composition.