• Title/Summary/Keyword: voltage-current characteristics

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A Modelling Method of a High Impedance Fault in a Distribution System as a Voltage Source using EMTP (EMTP를 이용한 전압원으로의 배전계통 고저항 사고 모델링 기법)

  • Kang, Yong-Choel;Nam, Soon-Ryul;Park, Jong-Keun;Jang, Sung-Il
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.48 no.11
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    • pp.1388-1393
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    • 1999
  • A more reliable algorithm for detecting a high impedance fault (HIF) requires fault currents at the relaying point containing information of load condition as well as HIF characteristics. This paper presents a modeling method of an HIF in a distribution system using EMTP. From the voltage and current waveforms of HIF experiment, the voltage-current characteristic is obtained and then piecewise linearized. The proposed method gets several points on the linearized voltage-current curve and then represents nonlinearity as piecewise linear resistances using Transient Analysis of Control Systems (TACS) in EMTP. Thus, an HIF is represented as a voltage source in the first and third quadrants of voltage-current plane. The method is implemented in EMTP and thus the voltage and current at the relaying point can be obtained when an HIF occurs. In this paper, an HIF was simulated on various load conditions and fault conditions in 22.9 [kV] distribution systems.

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Input Current Characteristics of a Three-Phase Diode Rectifier with Capacitive Filter under Line Voltage Unbalance Condition (커패시터 필터를 갖는 3상 다이오드 정류회로의 불형전원에서의 입력전류 특성)

  • 정승기;이동기;박기원
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.4
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    • pp.38-38
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    • 2001
  • The three-phase diode rectifier with capacitive filter is highly sensitive to line voltage unbalance. Because of its inherent nonlinear characteristics, small line voltage unbalance may cause highly unbalanced line current, causing detrimental effects on power quality. This paper presents a theoretical basis on this ′unbalance amplification effect′ and derives an analytical model of line current characteristics under unbalanced line voltage condition for various modes of operation. The results provide a basic guideline for optimal design of a three-phase diode rectifier with capacitive filter that is most commonly used for interfacing various power conversion equipments to power lines.

Analysis on the Characteristics of Voltage Unbalance Factor by Load Variations (부하 변동에 의한 전압불평형율의 특성 해석)

  • Kim, Jong-Gyeum;Park, Young-Jeen;Lee, Eun-Woong
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.54 no.1
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    • pp.47-53
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    • 2005
  • Most of the loads in industrial power distribution systems are balanced and connected to three power systems. However, in the user power distribution systems, most of the loads are single & three phase and unbalanced, generating voltage unbalance. Voltage unbalance factor is mainly affected by load system rather than stable power system. Unbalanced voltage will draw a highly unbalanced current. As a result, the three-phase currents may differ considerably, thus resulting in an increased temperature rise in the machine. This paper presents a scheme on the characteristics of voltage and current unbalance factor under the load variation at the three phase 4-wire system. Load unbalance factor is measured by the power quality measurement apparatus and compared by the current unbalance factor. Two methods are indicated similar results. The voltage unbalance factor of the three-phase 4-wire system is approved by the field measurement. Each phase has an impedance each other by the unbalanced operation pattern and give rise to voltage unbalance.

Restoration Characteristics along to Time of the Gate and Substrate Current in p-channel MOSFETS (P-채널 MOSFET에서 게이트와 기판 전류의 시간에 따른 복원 특성)

  • 조상운;장원수;배지철;이용재
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1101-1104
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    • 2003
  • In this paper, we analyzed the gate current and substrate current by the hot carrier effects and restoration phenomenon of characteristics by time in the p-channel MOSFETs. The Stress voltage condition is a voltage in maximum gate current and time is 3s, 10s, 30s, l00s, 1000s, 2000s and 3000s. As results of analysis, the gate current and substrate current were decreased by stress time, and the restoration time of characteristics were shown the results that were decreased by the exponential times.

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A Study on the Step-up PWM Cycloconverter (승압형 PWM 싸이크로 콘버터에 관한 연구)

  • 박민호;홍순찬;김기택
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.38 no.6
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    • pp.431-440
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    • 1989
  • This paper proposes a new PWM cycloconverter which can step up input voltage. With input reactors ac power supply acts as current source, and with output capacitors the balanced output voltage is build-up. The converter is modeled with fourth order state equation using dq transformation and the steady state characteristics are evaluated. It is shown that the proposed converter can generate the output voltage 2-5 times greater than input voltage. The output voltage and input current have sinusoidal and smooth waveforms and the converter is capable of voltage build-up. The characteristics of the proposed converter is verified simulation and experiment.

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A study on conduction current and D.C. breakdown characteristics in dielectric liquids (절연유의 도전전류와 직류절연파괴특성에 관한 연구)

  • 서국철
    • 전기의세계
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    • v.30 no.4
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    • pp.231-236
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    • 1981
  • It has been known that D.C. breakdown Voltage is lower than A.C. breakdown Voltage in insulatingoil, but there are still many unvivid points at electric conduction in breakdown or under of high electric field. This study measured the electric current-electric field characteristics (I-E characteristics) and the breakdown Voltage under of D.C. electric field of insulating oil using the system of electrodes that are near the Uniform electric field with a result. I can study, electric conduction in area of high electric field depends upon the Schottky effect. The liquidity of breakdown electric field takes place by the local concentration of electric field. The longer gap is and the more electric current is the more breakdown Voltage decreased. There are not almost the change of electric current-electric field characteristics by materials of electrode.

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Electroluminescence Characteristics of OLED by Full-Wave Rectification Alternating Current Driving Method (전파 정류 교류 구동 방식에 의한 OLED의 전계발광 특성)

  • Seo, Jung-Hyun;Ju, Sung-Hoo
    • Korean Journal of Materials Research
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    • v.32 no.7
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    • pp.320-325
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    • 2022
  • Single OLED and tandem OLED was manufactured to analyze the electroluminescence characteristics of DC driving, AC driving, and full-wave rectification driving. The threshold voltage of OLED was the highest in DC driving, and the lowest in full-wave rectification driving due to an improvement of current injection characteristics. The luminance at a driving voltage lower than 10.5 V (8,534 cd/m2) of single OLED and 20 V (7,377 cd/m2) of a tandem OLED showed that the full-wave rectification drive is higher than that of DC drive. The luminous efficiency of OLED is higher in full-wave rectification driving than in DC driving at low voltage, but decrease at high voltage. The full-wave rectification power source may obtain higher current density, higher luminance, and higher current efficiency than the AC power source. In addition, it was confirmed that the characteristics of AC driving and full-wave rectification driving can be predicted from DC driving characteristics by comparing the measured values and calculated values of AC driving and full-wave rectification driving emission characteristics. From the above results, it can be seen that OLED lighting with improved electroluminescence characteristics compared to DC driving is possible using full-wave rectification driving and tandem OLED.

A study on a modeling method about current-voltage characteristic of HTS tape considering resistance of stabilizer

  • Lee, W.S.;Lee, J.;Nam, S.;Ko, T.K.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.3
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    • pp.9-12
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    • 2013
  • Current-voltage characteristic models of superconducting material are suggested by many researchers. These current-voltage characteristic models are important because they can be used for design or simulation of superconductor devices. But widely used current-voltage models of superconductor wire still have some limitations. For example, a standard E-J power model has no parameters related with stabilizer's resistance in superconductor wire. In this paper, a current-voltage characteristic modeling method for high temperature superconductor (HTS) tape with considering the effect of stabilizer is introduced. And a current-voltage characteristic of a HTS tape is measured under different stabilizer conditions. Those measured current-voltage characteristics of the HTS tape modeled with proposed modeling method and the modeling results are compared.

Degradation Characteristics of Pr/Co/Cr/Er Co-doped Zinc Oxide Varistors by Impulse Current Stress

  • Nahm, Choon-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.348-352
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    • 2014
  • In light of the sure protection function, the most important factors of a varistor are the clamping voltage ratio and degradation characteristics. The degradation characteristics of Pr/Co/Cr/Er co-doped zinc oxide varistors were investigated by impulse currents (0.4~2.1 kA) stress for the specified content of $Er_2O_3$ (0.5 and 2.0 mol%). The varistor doped with 2.0 mol% $Er_2O_3$ exhibited the best clamp characteristics, with the clamp voltage ratio (K) in the range of K = 1.63~1.88 at the impulse currents of 5-50 A. However, the varistor doped with 0.5 mol% exhibited excellent electrical stability, with variation rates for the breakdown field, for the nonlinear coefficient, and for the leakage current density of -6.9%, -12.6%, and -14.3%, respectively, after application of an impulse current of 2.1 kA. In contrast, the varistor doped with 2.0 mol% was destroyed after application of an impulse current of 1.2 kA.

Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor (수평 구조의 MOS-controlled Thyristor에서 채널 길이 및 불순물 농도에 의한 Anode 전류 특성)

  • Jeong, Tae-Woong;Oh, Jung-Keun;Lee, Kie-Young;Ju, Byeong-Kwon;Kim, Nam-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.10
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    • pp.1034-1040
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    • 2004
  • The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.