• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.521-531
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• 2018

This paper presents a procedure for field measurements which provides a generalized Narrowband Power Line Communications (NB-PLC) channel model for low voltage (LV) access network in order to deploy advanced metering infrastructure (AMI) within Lahore, Pakistan. The measurements of allocated sites were performed in the residential (urban and rural), industrial and commercial electricity consumers for the NB-PLC channel modeling of overhead transmission lines (TLs). On the basis of extensive field measurement results, the average attenuation profile and transfer functions are presented. The results obtained from field measurements are validated by comparing them with a proposed Simulink model. A close agreement in the measured and simulated transfer function (TF) results is observed. The proposed Simulink model is an effort to model the NB-PLC channels in an effective way, especially in South Asian countries.

• Journal of Power Electronics
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• v.15 no.1
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• pp.246-255
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• 2015

This paper presents experimental results and its assessment of a variable-speed wind power generation system (VSWPGS) using permanent magnet synchronous generator (PMSG) and boost chopper circuit (BCC). Experimental results are obtained by a test bench with a wind turbine emulator (WTE). WTE reproduces the behaviors of a windmill by using servo motor drives. The mechanical torque references to drive the servo motor are calculated from the windmill wing profile, wind velocity, and windmill rotational speed. VSWPGS using PMSG and BCC has three speed control modes for the level of wind velocity to control the rotational speed of the wind turbine. The control mode for low wind velocity regulates an armature current of generator with BCC. The control mode for middle wind velocity regulates a DC link voltage with a vector-controlled inverter. The control mode for high wind velocity regulates a pitch angle of the wind turbine with a pitch angle control system. The hybrid of three control modes extends the variable-speed range. BCC simplifies the maintenance of VSWPGS while improving reliability. In addition, VSWPGS using PMSG and BCC saves cost compared with VSWPGS using a PWM converter.

• Journal of Power Electronics
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• v.14 no.3
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• pp.488-498
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• 2014

This paper presents an implementation of selective harmonic elimination (SHE) modulation for a single-phase 13-level transistor-clamped H-bridge (TCHB) based cascaded multilevel inverter. To determine the optimum switching angle of the SHE equations, the Newton-Raphson method is used in solving the transcendental equation describing the fundamental and harmonic components. The proposed SHE scheme used the relationship between the angles and a sinusoidal reference waveform based on voltage-angle equal criteria. The proposed SHE scheme is evaluated through simulation and experimental results. The digital modulator based-SHE scheme using a field-programmable gate array (FPGA) is described and has been implemented on an Altera DE2 board. The proposed SHE is efficient in eliminating the $3^{rd}$, $5^{th}$, $7^{th}$, $9^{th}$ and $11^{th}$ order harmonics, which validates the analytical results. From the results, it can be seen that the adopted 13-level inverter produces a higher quality with a better harmonic profile and sinusoidal shape of the stepped output waveform.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• Applied Microscopy
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• v.37 no.2
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• pp.111-121
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• 2007

Coefficient of spherical aberration of the objective lens in the KBSI-HVEM was evaluated by diffractogram method. Instrumental resolution was also discussed with this method. In order to improve the accuracy, digital processing and graphical curve fitting for intensity profile of diffractogram were employed. Experimental concerns where the optimal procedure of the measurement con be accomplished for this study were discussed. The spherical aberration coefficient $(C_s)$ was estimated to be $2.628{\pm}0.04\;mm$ from this study, which was almost coincident with the value of the manufacture's suggestion $(C_s=2.65\;mm)$.

• Journal of Electrical Engineering and Technology
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• v.5 no.1
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• pp.70-78
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• 2010

Elitist nondominated sorting genetic algorithm (NSGA-II) is adopted and improved for multiobjective optimal reactive power flow (ORPF) problem. Multiobjective ORPF, formulated as a multiobjective mixed integer nonlinear optimization problem, minimizes real power loss and improves voltage profile of power grid by determining reactive power control variables. NSGA-II-based ORPF is tested on standard IEEE 30-bus test system and compared with four other state-of-the-art multiobjective evolutionary algorithms (MOEAs). Pareto front and outer solutions achieved by the five MOEAs are analyzed and compared. NSGA-II obtains the best control strategy for ORPF, but it suffers from the lower convergence speed at the early stage of the optimization. Several problem-specific local search strategies (LSSs) are incorporated into NSGA-II to promote algorithm's exploiting capability and then to speed up its convergence. This enhanced version of NSGA-II (ENSGA) is examined on IEEE 30 system. Experimental results show that the use of LSSs clearly improved the performance of NSGA-II. ENSGA shows the best search efficiency and is proved to be one of the efficient potential candidates in solving reactive power optimization in the real-time operation systems.

• Journal of Power Electronics
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• v.11 no.3
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• pp.271-278
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• 2011

This paper presents a LLC resonant controller IC for secondary side control without external active devices to achieve low profile and low cost LED back light units. A gate driving transformer is adopted to isolate the primary side and the secondary side instead of an opto-coupler. A new integrated dimming circuitry is proposed to improve the dynamic current control characteristic and the current density of a LED for the brightness modulation of a large screen LCD. A dual-slope clock generator is proposed to overcome the frequency error due to the under shoot in conventional approaches. This chip is fabricated using 0.35 ${\mu}m$ BCD technology and the die size is $2{\times}2\;mm^2$. The frequency range of the clock generator is from 50 kHz to 500 kHz and the range of the dead time is from 50 ns to 2.2 ${\mu}s$. The efficiency of the LED driving circuit is 97 % and the current consumption is 40 mA for a 100 kHz operation frequency from a 15 V supply voltage.

• Journal of Power Electronics
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• v.10 no.6
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• pp.769-776
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• 2010

The ultracapacitor module has recently been recast for use in hybrid energy storage systems (HESSs). As a result, accurate state-of-charge (SOC) estimation for an ultracapacitor module is as important as that of primary sources in order to be utilized efficiently in an energy storage system (ESS). However, while SOC estimation via the open-circuit voltage (OCV) method is generally used due to its linear characteristics compared with other ESSs, this method results in many errors in cases of highcurrent charging/discharging within a short time period. Accordingly, this paper introduces a dynamic SOC estimation algorithm that is capable of SOC compensation of an ultracapacitor module even when there is a current input and output. A cycle profile that simulates the operating conditions of a mild-HEV was applied to a vehicle simulator to verify the effectiveness of the proposed algorithm.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1247-1249
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• 1993

In this paper, NUDFET(NonUniformly Doped Field Effect Transistor) is presented as an alternative which offers the possibility of reducing the power necessary to operate switching circuits without a substantial loss in speed. The purpose of this NUDFET is to modify the electric field profile in order to cause carrier velocity saturation to occur at a lower voltage than it would occur in the uniformly doped device of the same channel length. The more MESFET and NUDFET circuits are realized, the more accurate model ins the performance of these devices become required. Analytic model ins was replaced by numerical analysis because of the complexity of device configuration. In this paper, FEM is selected because of simpler local mesh refinement and smaller computer memory than FDM. For accurate analysis, this paper has applied the Scharfetter-Gummel(S-G) Scheme and seven-point Gaussian Quadrature rule to assembly of the finite-element stiffness matrices and right-hand side vector of the semiconductor equations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.