• Journal of Advanced Marine Engineering and Technology
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• 제28권4호
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• pp.657-666
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• 2004

A Design of GA-based SPS controller for power system stabilization was investigated in this paper. The design problem of SPS controller is formulated as an optimization problem using GA. The dynamic characteristic responses are considered to verify the performance of the proposed SPS under various disturbances and operation conditions. The simulation results show that the proposed SPS controller provides most of the damping and improves greatly the voltage profile of the system under two different disturbances.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1986년도 춘계학술발표회 논문집
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 B
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• pp.1419-1421
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• 2005

This paper presents theoretical and practical details about the design, implementation, and performance of a series resonant dc-to-dc converter using planar magnetics. Results of sinusoidal analysis are used to predict the voltage gain and conversion efficiency. The performance of a prototype converter is presented including the efficiency measurement and theoretical loss breakdown.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.286-289
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• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• 한국산업정보학회논문지
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• 제17권7호
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• pp.119-125
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• 2012

본 논문은 변전소 내에서 취득된 데이터만을 이용하여 전계통 전압안정도를 확보하기 위한 실시간 변전소내 OLTC(On-Load Tap Changer)와 S.S(Switched Shunt)와의 협조제어 알고리즘을 제안하고자 한다. 전압레벨을 일정한 값으로 유지시키기 위해서 동작하는 OLTC의 제어를 잘못하게 된다면 오히려 계통의 안정도(전압안정도) 를 해치는 결과를 나타낼 수 있다. 이 논문에서는 단일 변전소에서 취득된 데이터만으로 전체 시스템의 상태를 판단할 수 있는 Z-index를 이용하였다. Z-index를 이용하여 시스템을 normal 상태와 abnormal 상태로 구분하였고, 각 상태에 따른 협조제어 알고리즘을 제안하였다. 알고리즘 검증을 위해서 Hypersim과 matlab simulink를 이용하였다.

• 한국진공학회지
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• 제13권3호
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• pp.132-138
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• 2004

대기압의 공기 중에서 코로나 방전 플라스마에 대한 특성을 연구하기 위해 wire-cylinder 형태의 반응로에서 FCT(flux-corrected transport) 알고리즘과 FEM(finite element method) 방법을 적용한 자체 모순이 없는 1차원 수치적 모델을 사용하였다. 코로나 방전 반응로에 펄스 전압과 직류 전압을 인가하였을 때, 플라스마 밀도의 분포를 계산하여 전압의 변화에 따른 플라스마 특성의 변화를 연구하였으며, 또한 반응로의 크기 변화에 따른 플라스마의 특성 변화를 연구하였다. 이 결과로 얻어지는 활동 반경(active radius)의 변화를 Peek의 실험값과 비교해 보았다. 이와 같은 코로나 방전 플라스마에 대한 수치적 계산 결과는 방전 과정에서 일어나는 물리적 특성을 잘 설명하여 환경오염 물질 제거를 위한 반응로의 최적 설계를 위해 유용하게 쓰일 수 있을 것이다.

• 한국표면공학회지
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• 제32권4호
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• pp.496-502
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• 1999

Electroplating of Ag and Au on the functional area of lead frames are required for good bonding ability in IC packaging. As the patterns of the lead frame become finer, development of new deposition technology has been required for solving problems associated with process control for uniform thickness on selected area. Sputtering was employed to investigate the adhesion between substrate Alloy42 and Ag film as a new candidate process alternative to conventional electroplating. Coating thickness of Ag film was controlled to 3.5$\mu\textrm{m}$ at room temperature as a reference. The deposition of film was optimized to ensure the adhesion by process parameters of substrate heating temperature at $100~300^{\circ}C$, sputter etching time at -300V for 10~30min, bias voltage of -100~-500V, and existence of Cr interlayer film of $500\AA$. The critical $load L_{c}$ /, defined as the minimum load at which initial damage occurs, was the highest up to 29N at bias voltage of -500V by scratch test. AFM surface image and AES depth profile were investigated to analyze the interface. The effect of bias voltage in sputtering was to improve the surface roughness and remove the oxide on Alloy42.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.817-820
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• 2009

To meet the high current load requirement from the high energy density realized by metal oxide and high power density graphite, we propose a novel hybrid supercapacitor consisting of Nb2O5 and KS6 graphite in 1.0 M LiPF6-EC:DEC (1:2). This new system exhibits a sloping voltage profile from 2.7 to 3.5 V during charging and presents a high operating voltage plateau between 1.5 and 3.5 V during discharging. The cell was tested at a current density of 100 mA/g with a cut-off voltage between 3.0 and 1.0 V. This novel energy storage system delivers the highest initial discharge capacity of 55 mAh/g and exhibits a good cycle performance.

• 대한전기학회논문지
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• 제41권7호
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• pp.712-722
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• 1992

Several voltage instability/collapse problems that have occurred in the electric utility industry worldwide have gained the attention of engineers and researchers of electric power systems. This paper proposes an effective calculation scheme of the extreme loading point and nose curves(P-V curves) using modified Newton-Raphson(N-R) load flow method and the Continuation Method. This method provides detail and visual information of the power system voltage profile and operating margin ro operators and planners. In this paper, a modified load flow claculation method for ill-conditioned power systems is introduced for the purpose of seeking more precise load flow solutions and nose curves, and the Continuation Method is also used as a part of the solution algorithm for the calculation of extreme loading point and nose curves. The conventional polar coordinate based N-R load flow program is modified to avoid numerical difficulties caused by the singularity of the Jacobian matrix occuring in the vicinity of extreme loading point of heavily loaded systems. Application results of the proposed method to Klos-Kerner 11-bus system and modified IEE-30-bus system are presented to assure the usefulness of the approach.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.