• 제목/요약/키워드: voltage profile

검색결과 354건 처리시간 0.023초

계통 최적전압 상태 유지를 위한 다기 UPFC 운용방법 (An Operation Method of Many UPFC's for Maintaining the Optimal Voltage Profile)

  • 김태현;문승일;박종근
    • 대한전기학회논문지:전력기술부문A
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    • 제49권11호
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    • pp.531-535
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    • 2000
  • A method to compute the reactive powers of the added buses by the decoupled UPFC model for the optimal voltage profile is presented, by which the voltage magnitudes of PQ buses can get closer to the reference value(usually one p.u.). The performance index for assessing how much the voltage magnitude is closer to the reference value is defined as the squared sum of the present voltage minus the reference voltage multiplied by the weighting number associated with the relative importance of the buses. Numerical example in a 10-unit 39-bus power system with 2 UPFC's shows that the performance index can be very much reduced by operating many UPFC's with the reactive powers for the optimal voltage profile proposed in this paper.

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Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제9권3호
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    • pp.310-314
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    • 2011
  • This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

Ion-Implanted E-IGFET의 Doping Profile과 Threshold 전압과의 관계에 관한 연구(I) (A Study on the Relation of Doping Profile and Threshold voltage in the Ion-Implanted E-IGFET(I))

  • 손상희;오응기;곽계달
    • 대한전자공학회논문지
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    • 제21권4호
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    • pp.58-64
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    • 1984
  • 이온주입형 E-IGFET에서 이온주입층내 불순물 profile을 임의의 형태로 가정하였으며, 가정한 불순물 profile을 이용하여 threshold 전압에 대한 간단한 model을 유도하였다. 유도한 model을 이용하여 Gaus-sian-profile일 때의 threshold 전압치를 구하였고, 실제의 측정 data와 비교하였을 때 일치함을 확인할 수 있었다. 더불어, box-profile일 때의 threshold 전압치의 오차를 계산해 보았다. 또한, substrate-bias에 의한 threshold 전압의 변화를 simulation하였으며. 계산과정에서 이온주입층의 깊이 D를 구하는 새로운 방법을 제시하였다.

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도핑분포함수에 따른 비대칭 이중게이트 MOSFET의 문턱전압이동현상 (Threshold Voltage Shift for Doping Profile of Asymmetric Double Gate MOSFET)

  • 정학기
    • 한국정보통신학회논문지
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    • 제19권4호
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    • pp.903-908
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    • 2015
  • 본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 내 도핑분포함수의 변화에 따른 문턱전압이동 현상에 대하여 분석하였다. 반도체소자를 도핑시킬 때는 주로 이온주입법을 사용하며 이때 분포함수는 가우스분포를 나타내고 있다. 가우스분포함수는 이온주입범위 및 분포편차에 따라 형태를 달리하며 이에 따라 전송특성도 변화하게 된다. 그러므로 비대칭 DGMOSFET의 채널 내 도핑분포함수의 변화는 문턱전압에 영향을 미칠 것이다. 문턱전압은 트랜지스터가 동작하는 최소한의 게이트전압이므로 단위폭 당 드레인 전류가 $0.1{\mu}A$ 흐를 때 상단 게이트전압으로 정의하였다. 문턱전압을 구하기 위하여 해석학적 전위분포를 포아송방정식으로부터 급수형태로 유도하였다. 결과적으로 도핑농도가 증가하면 도핑분포함수에 따라 문턱전압은 크게 변하였으며 특히, 고 도핑 영역에서 하단 게이트전압에 따라 이온주입범위 및 분포편차에 의한 문턱전압의 변화가 크게 나타나는 것을 알 수 있었다.

UPFC 운용에 의한 전력 시스템 최적 전압 유지 (Maintaining Optimal Voltage Profile by the Operation of UPFC)

  • 김태현;문채주;박종근;문승일;서장철;한병문
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 A
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    • pp.265-267
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    • 2000
  • A method to compute the reactive powers of the added buses by the decoupled UPFC model for the optimal voltage profile is presented, by which the voltage magnitudes of PQ buses can get closer to the reference value(usually one p.u.). The performance index for assessing how much the voltage magnitude is closer to the reference value is defined as the squared sum of the present voltage minus the reference voltage multiplied by the weighting number associated with the relative importance of the buses. Numerical example in a 10-unit 39-bus power system with 2 UPFC's shows that the performance index can be very much reduced by operating multi UPFC's with the reactive powers for the optimal voltage profile proposed in this paper.

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A New High Efficiency and Low Profile On-Board DC/DC Converter for Digital Car Audio Amplifiers

  • Kim Chong-Eun;Han Sang-Kyoo;Moon Gun-Woo
    • Journal of Power Electronics
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    • 제6권1호
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    • pp.83-93
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    • 2006
  • A new high efficiency and low profile on-board DC/DC converter for digital car audio amplifiers is proposed. The proposed converter shows low conduction loss due to the low voltage stress of the secondary diodes, a lack of DC magnetizing current for the transformer, and a lack of stored energy in the transformer. Moreover, since the primary MOSFETs are turned-on under zero-voltage-switching (ZVS) conditions and the secondary diodes are turned-off under zero-current-switching (ZCS) conditions, the proposed converter has minimized switching losses. In addition, the input filter can be minimized due to a continuous input current, and an output inductor is absent in the proposed converter. Therefore, the proposed converter has the desired features, high efficiency and low profile, for a viable power supply for digital car audio amplifiers. A 60W industrial sample of the proposed converter has been implemented for digital car audio amplifiers with a measured efficiency of $88.3\%$ at nominal input voltage.

Coordinated Wide-Area Regulation of Transmission System for Voltage Profile Improvement and Power Loss Reduction

  • Asadzadeh, Babak;Golshannavaz, Sajjad
    • Transactions on Electrical and Electronic Materials
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    • 제18권5호
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    • pp.279-286
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    • 2017
  • In this paper, an optimal approach for the wide-area regulation of control devices in a transmission network is proposed. In order to realize an improved voltage profile and reduced power loss, existing devices such as tap-changing transformers, synchronous machines, and capacitor banks should be controlled in a coordinated and on-line manner. It is well-understood that phasor measurement units in transmission substations allow the system operators to access the on-line loading and operation status of the network. Accordingly, this study proposes efficient software applications that can be employed in area operation centers. Thus, the implanted control devices can be regulated in an on-line and wide-area coordinated approach. In this process, efficient objective functions are devised for both voltage profile improvement and power loss reduction. Subsequently, sensitivity analysis is carried out to determine the best weighting factors for these objectives. Extensive numerical studies are conducted on an IEEE 14-bus test system and a real-world system named the Azarbayjan Regional Transmission Network. The obtained results are discussed in detail to highlight the promising improvements.

온도와 습도에 따른 초고압 변압기용 앵글링 프레스보드 특성 (Angle Ring Press Board Characteristic in Accordance with Temperature and Humidity for High Voltage Transformer)

  • 서왕벽
    • 한국전기전자재료학회논문지
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    • 제33권1호
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    • pp.60-64
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    • 2020
  • In this study, to develop angle ring pressboards for high voltage transformers, the radius and thickness are modified under the conditions of temperature and humidity. In particular, a pressboard with a thickness of 6 mm and a radius at the angled part were investigated based on the simulation of the principal stress from the angled optimization profile shape. As a result, by the appropriate application of a higher temperature, the solid insulation can be improved to reduce the moisture content for an optimized profile angle of a high voltage transformer. This also results in the improvement of the safety factor by 25%. It is determined that the electrical insulation properties of pressboards in high voltage transformers can be enhanced by improving their properties.

CVR을 위한 전압 계측 기반 전압 및 무효전력 협조제어 (Voltage Measurement-based coordinated Volt/VAR Control for Conservation Voltage Reduction)

  • 고석일;최준호;안선주;윤상윤
    • 전기학회논문지
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    • 제66권12호
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    • pp.1689-1696
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    • 2017
  • In this paper, the voltage measurement-based coordinated Voltage/VAR control (VMCVVC) algorithm for conservation voltage reduction(CVR) is proposed. The proposed algorithm has the purpose of enhancing the CVR effect through coordinated control of the voltage control devices such as the distributed energy resources and the load tap changer(LTC) transformers. It calculates the references of the voltage control devices such that the bus voltages are maintained at as close to the lower operation limit as possible. For this purpose, firstly, the distribution system is divided into LTC transformer control zones through topological search. Secondly, the reactive power references of the reactive power control devices are determined such that the voltage profile of the section is flattened. Finally, the tap references of the LTC transformers are calculated to lower the voltage profile. The effectiveness of the proposed algorithm is demonstrated through case studies using IEEE test network.

Analytical and sensitivity approaches for the sizing and placement of single DG in radial system

  • Bindumol, E.K.;Babu, C.A.
    • Advances in Energy Research
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    • 제4권2호
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    • pp.163-176
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    • 2016
  • Rapid depletion of fossil based oil, coal and gas reserves and its greater demand day by day necessitates the search for other alternatives. Severe environmental impacts caused by the fossil fire based power plants and the escalating fuel costs are the major challenges faced by the electricity supply industry. Integration of Distributed Generators (DG) especially, wind and solar systems to the grid has been steadily increasing due to the concern of clean environment. This paper focuses on a new simple and fast load flow algorithm named Backward Forward Sweep Algorithm (BFSA) for finding the voltage profile and power losses with the integration of various sizes of DG at different locations. Genetic Algorithm (GA) based BFSA is adopted in finding the optimal location and sizing of DG to attain an improved voltage profile and considerable reduced power loss. Simulation results show that the proposed algorithm is more efficient in finding the optimal location and sizing of DG in 15-bus radial distribution system (RDS).The authenticity of the placement of optimized DG is assured with other DG placement techniques.