• Journal of Power Electronics
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• v.16 no.5
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• pp.1904-1917
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• 2016

The moving average filter (MAF) is widely utilized to improve the disturbance rejection capability of phase-locked loops (PLLs). This is of vital significance for the grid-integration and stable operation of power electronic converters to electric power systems. However, the open-loop bandwidth is drastically reduced after incorporating a MAF into the PLL structure, which makes the dynamic response sluggish. To overcome this shortcoming, some new techniques have recently been proposed to improve the transient response of MAF-based PLLs. In this paper, a comprehensive performance comparison of advanced MAF-based PLL algorithms is presented. This comparison includes HPLL, MPLC-PLL, QT1-PLL, and DMAF-PLL. Various disturbances, such as grid voltage sag, voltage flicker, harmonics distortion, phase-angle and frequency jumps, DC offsets and noise, are considered to experimentally test the dynamic performances of these PLL algorithms. Finally, an improved positive sequence extraction method for a HPLL under the frequency jumps scenario is presented to compensate for the steady-state error caused by non-frequency adaptive DSC, and a satisfactory performance has been achieved.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Proceedings of the KIEE Conference
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• 2005.07a
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• pp.447-449
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• 2005

Power supply system & environment have been changed according to the universal global electrification, the pursuit of improving productivity and the convenience of life. The various kinds of modem electric facilities and almost of all kinds of digital devices embedded microprocessor are very sensitive to the supplied power quality variations. So, they are stopped and result in large economic damage when even the deterioration of power quality with short duration is occurred, which was not so fatal to the conventional industrial facilities and devices. Conversely, those facilities and digital devices generate many kinds of power quality problems such as harmonic.;, flicker, voltage drop, etc. This paper presents the status of power quality and outlines the development of a new power quality monitoring system based on the experience of a series of authors' researches and field measurements for industrial customers in Korea. It also proposes the functions of the monitoring device and the efficient analysis method based on the Korean electrical act and international standards on power quality. Finally, the authors suggest some countermeasures for advancing the power quality to cope with the competitive electric power market and customers' needs after domestic restructuring of electric power industry.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.6 s.336
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• pp.59-66
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• 2005

CMOS LC VCO for tri-bind wireless LAN applications was designed in 1.8V 0.18$\mu$m CMOS process. PMOS transistors were chosen for VCO core to reduce flicker noise. The possible operation was verified for 5.8GHz band (5.725$\~$5.825GHz), 5.2GHz band (5.150$\~$5.325GHz), and 2.4GHz band (2.412$\~$2.484GHz) using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing technique was used for capacitance linearization and PLL stability improvement. VCO core consumed 2mA current and $570{\mu}m{\times}600{\mu}m$ die area. The phase noise was lower than -110dBc/Hz at 1MHz offset for tri-band frequencies.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.51-57
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• 2010

A dual-mode direct conversion receiver is developed in $0.13\;{\mu}m$ RF CMOS process for IEEE 802.11n based wireless LAN and IEEE 802.16e based mobile WiMAX application. The RF receiver covers the frequency band between 2.3 and 2.7 GHz. Three-step gain control is realized in LNA by using current steering technique. Current bleeding technique is applied to the down-conversion mixer in order to lower the flicker noise. A frequency divide-by-2 circuit is included in the receiver for LO I/Q differential signal generation. The receiver consumes 56 mA at 1.4 V supply voltage including all LO buffers. Measured results show a power gain of 32 dB, a noise figure of 4.8 dB, a output $P_{1dB}$ of +6 dBm over the entire band.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.444-453
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• 2007

This paper deals with a powerful countermeasure for power quality problems caused by the operation of electrical arc furnace in bulk power systems. The rapid active load fluctuations of electrical arc furnace could produce several problems such as voltage flicker and active power oscillations. The typical methods using only the reactive power compensation have their own limitation in solving the power quality problems caused by active load variations. The coordination of both active and reactive power compensation is required to solve the power quality problems. This paper focuses on the impacts and the dynamic phenomena caused by the active load fluctuation. This paper proposes the optimal algorithm for the active power compensation based on the function of 1(n ratio and the concepts for the active power compensation. The results from a case study show that the proposed methods can be a practical tool for the power quality problems in power systems.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.113-118
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• 2015

High-power semiconductor devices and microprocessors in factory electrical installation so sensitive to power quality measurements such as harmonic currents, voltage fluctuations, flicker, current imbalance. Therefore, the little change of power quality can influences the productivity of factory electrical machines. Troubleshooting these problems requires accurate measurements and analysis of power quality with monitoring instruments that can effectively locate issues and identify solutions. In this paper, the author presents hand-held power quality monitoring system to locate issues and identify solutions. The proposed system consists of two parts, One is to develop hand-held power meters by using NI(National Instrument) DAQ(Data Acquisition) and WLAN. Another is develop power quality monitoring MMI(Man-Machine Interface) using LabView software. To demonstrate the validity of the proposed algorithm, variable tests are carried out.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.6
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• pp.2739-2746
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• 2011

This paper proposes the method for more effectively calculating X/R which is the ratio of equivalent reactance(X) and resistance(R) of the bulk power system and analyses the characteristic of X/R values by applying the proposed method to the real bulk power systems. X/R is used to determine the rating of the relay in the bulk power systems and its value has been accepted to be big enough to ignore the equivalent resistance of the bulk power systems. However, X/R is calculated as a big number when only the upper transformer and transmission line are considered. The correct approach to calculating X/R needs to consider all the parameters including generators, transformers, lines and loads. This paper calculates X/R of the bulk power systems using dynamic models which have been used to analyse the power system stability. The effectiveness of the proposed method is verified by applying it to the test system and X/R values of the real bulk power systems are analyzed. In addition, the dependence of X/R on the closeness of its calculating locations to the generator is verified by using the marginal loss factor which has been used in the electricity market.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.10
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• pp.109-117
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• 2004

In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.2
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• pp.58-67
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• 1995

The paper describes the variation of magnetic fields caused by the operation of induction motors. The measuring system consists of the self-integrating magnetic field sensor, amplifier, and active integrator. From the calibration experiments, the frequency bandwidth of the magnetic field measuring system ranges from 20[Hz] to 300[kHz] and sensitivity is 0.234(mV/$\mu\textrm{T}$]. The magnetic fields generated under steady state and starting operations of duction motor are recorded by the proposed measuring system, and the fast Fourier transformation(FFT) of the measured data is performed to analyze the harmonic components. A single pulsed magnetic field is strongly caused by direct starting the induction motor, and its peak value is greater than 5 times as compared with the steady state value. The long transient duration and high intensity originates from the large inductance and dynamic characteristic of the induction motor, During the steady state operation of induction motor, subharmonics of magnetic field components, which depend on the pole number of induction motor, are observed. The lower order power-line harmonics can be inferred from the voltage flicker and current ripple which are derived from the torque fluctuation of induction motor. In the case of the induction motor drived by inverter, the harmonics of magnetic field are much more than those caused by direct starting method and are found generally to increase with decreasing the driving frequency.