• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.302-309
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• 2009

We fabricated a Si nano floating gate memory with Schottky barrier tunneling transistor structure. The device was consisted of Schottky barriers of Er-silicide at source/drain and Si nanoclusters in the gate stack formed by LPCVD-digital gas feeding method. Transistor operations due to the Schottky barrier tunneling were observed under small gate bias < 2V. The nonvolatile memory properties were investigated by measuring the threshold voltage shift along the gate bias voltage and time. We obtained the 10/50 mseconds for write/erase times and the memory window of $\sim5V$ under ${\pm}20\;V$ write/erase voltages. However, the memory window decreased to 0.4V after 104seconds, which was attributed to the Er-related defects in the tunneling oxide layer. Good write/erase endurance was maintained until $10^3$ write/erase times. However, the threshold voltages moved upward, and the memory window became small after more write/erase operations. Defects in the LPCVD control oxide were discussed for the endurance results. The experimental results point to the possibility of a Si nano floating gate memory with Schottky barrier tunneling transistor structure for Si nanoscale nonvolatile memory device.

• Transactions of the Korean hydrogen and new energy society
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• v.6 no.2
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• pp.53-63
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• 1995

A 100kW class stack consisting of 10 molten carbonate fuel cells has been fabricated. Internally manifold stack has been tested for endurance. Each cell in the stack had an electrode area of $100cm^2$ and reactant gases were distributed in each cells in a cross-flow configuration. Initial and long term operation performance of the stack was investgated as a function of gas utilization using a specially designed small scale stack test facility. It was possible to have a stack with an output of more than 100W using an anode gas of 72% $H_2/18%$ $CO_2/10%H_2O$ and cathode gas of 33% $O_2/67%$ $CO_2$ and 70% Air 30% $CO_2$. The output and voltage of the stack at a current 15A($150mA/cm^2$) and gas utilization of 0.4 showed 125.8W and 8.39V respectively by elapsed time of 310 hours operation. In long term operation characteristics, the voltage drop of 52.4mV/1000hour was observed after more than 1,840 hours operation. Among the voltage drop, the OCV loss was highest than other voltage loss such as internal resistance and electrode polarization. Non uniformity of 2voltages and degradation of cell voltage in the stack was observed in according to changing the utilization rate after a long term operation. Further work for increasing the performance prolonging the life of the stack are required.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.922-926
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• 2002

In this paper, in order to investigate the catalytic effect of the sludge exhausted from waterworks as heating temperature for NOx removal, we measure NO, $NO_2$ concentration as increasing temperature of sludge pellets and applying high voltage to sludge pellets in a quartz-glass reactor at the same time. NO initial concentration is 100ppm balanced with air gas in a mixing chamber. The gas flow is 5[l/min] and the heating temperature of sludge pellets in a quartz-glass reactor is adjusted from $200[^{\circ}C]$ $400[^{\circ}C]$ to investigate the effect of sludge pellets for removal NOx$(NO+NO_2)$ as increasing temperature. $BaTiO_3$ pellets is filled in a packed-bed reactor for corona discharge to measure how much NOx$(NO+NO_2)$ is removed after generating $NO_2$ from the packed-bed reactor. AC[60Hz] voltage is supplied to the reactor for discharge. In the result, $NO_2$ concentration is decreased by sludge pellets without heating temperature for sludge pellets in case of sludge pellets done heat treatment, however NO concentration is almost the same to be compared NO initial concentration. As increasing heating temperature for sludge pellets, $NO_2$ adsorbed on the sludge surface done heat treatment is converted to NO by the thermal energy, so NO concentration is extremely increased by reduction decomposition of $NO_2$. Finally, We think the sludge is possible to use for reduction catalysts, however we need to study more about the possibility and endurance of sludge as catalysts for NOx removal.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.21-26
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• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

• International Journal of Aeronautical and Space Sciences
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• v.17 no.4
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• pp.631-640
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• 2016

A dual-mode power management for a hybrid-electric UAV with a cruise power of 200W is proposed and empirically verified. The subject vehicle is a low-speed long-endurance UAV powered by a solar cell, a fuel cell, and a battery pack, which operate in the same voltage bounds. These power sources of different operational characteristics can be managed in two different methods: passive management and active management. This study proposes a new power management system named PMS2, which employs a bypass circuit to control the individual power sources. The PMS2 normally operates in active mode, and the bypass circuit converts the system into passive mode when necessary. The output characteristics of the hybrid system with the PMS2 are investigated under simulated failures in the power sources and the conversion of the power management methods. The investigation also provides quantitative comparisons of efficiencies of the system under the two distinct power management modes. In the case of the solar cell, the efficiency difference between the active and the passive management is shown to be 0.34% when the SOC of the battery is between 25-65%. However, if the SOC is out of this given range, i.e. when the SOC is at 90%, using active management displays an improved efficiency of 6.9%. In the case of the fuel cell, the efficiency of 55% is shown for both active and passive managements, indicating negligible differences.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.831-837
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• 2002

Scaled SONOS transistors have been fabricated by 0.35$\mu\textrm{m}$ CMOS standard logic process. The thickness of stacked ONO(blocking oxide, memory nitride, tunnel oxide) gate insulators measured by TEM are 2.5 nm, 4.0 nm and 2.4 nm, respectively. The SONOS memories have shown low programming voltages of ${\pm}$8.5 V and long-term retention of 10-year Even after 2 ${\times}$ 10$\^$5/ program/erase cycles, the leakage current of unselected transistor in the erased state was low enough that there was no error in read operation and we could distinguish the programmed state from the erased states precisely The tight distribution of the threshold voltages in the programmed and the erased states could remove complex verifying process caused by over-erase in floating gate flash memory, which is one of the main advantages of the charge-trap type devices. A single power supply operation of 3 V and a high endurance of 1${\times}$10$\^$6/ cycles can be realized by the programming method for a flash-erased type EEPROM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• Nuclear Engineering and Technology
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• v.48 no.4
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• pp.982-996
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• 2016

In this paper, new tethered aerial robots including roaming tethered aerial robots (RTARs) for radioactive material sampling and stationary tethered aerial robots (STARs) for environment monitoring are proposed to meet extremely-long-endurance missions of nuclear power plants. The flight of the proposed tethered aerial robots may last for a few days or even a few months as long as the tethered cable provides continuous power. A high voltage AC or DC power system was newly adopted to reduce the mass of the tethered cable. The RTAR uses a tethered cable spooled from the aerial robot and an aerial tension control system. The aerial tension control system provides the appropriate tension to the tethered cable, which is accordingly laid down on the ground as the RTAR roams. The STAR includes a tethered cable spooled from the ground and a ground tension control system, which enables the STAR to reach high altitudes. Prototypes of the RTAR and STAR were designed and successfully demonstrated in outdoor environments, where the load power, power type, operating frequency, and flight attitude of the RTAR and STAR were: 180 W, AC 100 kHz, and 20 m; and 300 W, AC or DC 100 kHz, and 80 m, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.12
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• pp.2276-2280
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• 2008

In this paper, we present thermal dependancy of LED package element by changing temperature of MCPCB for design high efficiency LED lamp, and confirmed influence of LED chip against temperature with analysis of thermal resistance and thermal capacitance. As increasing temperature, WPOs were decreased from 25 to 22.5 [%] and optical power were also decreased. that is decreased reason of optical power that forward voltage was declined by decrease of energy bandgap. Therefore optical power by temperature of MCPCB should consider to design lamp for street light and security light. Moreover, compensation from declined optical efficiency is demanded when LED package is composed. Also, thermal resistances from chip to metal PCB were decreased from 12.18 to 10.8[$^{\circ}C/W$] by changing temperature. Among the thermal resistances, the thermal resistance form chip to die attachment was decreased from 2.87 to 2.5[$^{\circ}C/W$] and was decreased 0.72[$^{\circ}C/W$] in Heat Slug by chaning temperature. Therefore, because of thermal resistance gap in chip and heat slug, reliability and endurance of high power LED affect by increasing non-radiative recombination in chip from heat.