• Korean Journal of Metals and Materials
• /
• v.50 no.3
• /
• pp.243-247
• /
• 2012

A ruthenium (Ru) catalytic layer and a conventional Pt layer were assessed as counter electrodes (CE) for dye sensitized solar cells (DSSCs). Ru films with different thicknesses of 34, 46, and 90 nm were deposited by atomic layer deposition (ALD). Pt layers with the same thicknesses were prepared by sputtering. $0.45cm^2$ DSSCs were prepared and their properties were characterized by FE-SEM, cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V). FE-SEM revealed that the crystallized Ru films and Pt films had been deposited quite conformally. CV showed that the catalytic activity of Pt was much greater than that of Ru. In addition, although the catalytic activity of Pt did not depend on the thickness, that of Ru showed an increase with increasing thickness. Impedance analysis revealed high charge transfer resistance at the Ru interface and a decrease with increasing Ru thickness, whereas Pt showed low resistance with no thickness dependence. Despite the relatively small catalytic activity of Ru, the I-V result revealed the average energy conversion efficiency of Ru and Pt to be 2.98% and 6.57%, respectively. These results suggest that Ru can be used as counter electrodes in DSSCs due to its extremely low temperature process compatibility.

• Korean Journal of Optics and Photonics
• /
• v.25 no.2
• /
• pp.95-101
• /
• 2014

When voltage is applied on the metal layer of a surface plasmon resonance (SPR) sensor, electric field excitation causes charge accumulation on the metal surface. This alters not only the optical properties of the metal but also the SPR angle. In this study we investigate this effectby performing experiments using solutions of various pH values, and we obtain the relation between total surface charge and SPR angle. The curves for the various pH conditions become coincident. We compare our results to those from an earlier space charge layer (SCL) model, and suggest a modified SCL model which explains our result well. This result will be useful in applications of SPR sensors, and in studying the optical properties of thin metal layers.

• Molecules and Cells
• /
• v.44 no.2
• /
• pp.88-100
• /
• 2021

Anoctamin 6/TMEM16F (ANO6) is a dual-function protein with Ca2+-activated ion channel and Ca2+-activated phospholipid scramblase activities, requiring a high intracellular Ca2+ concentration (e.g., half-maximal effective Ca2+ concentration [EC50] of [Ca2+]i > 10 μM), and strong and sustained depolarization above 0 mV. Structural comparison with Anoctamin 1/TMEM16A (ANO1), a canonical Ca2+-activated chloride channel exhibiting higher Ca2+ sensitivity (EC50 of 1 μM) than ANO6, suggested that a homologous Ca2+-transferring site in the N-terminal domain (Nt) might be responsible for the differential Ca2+ sensitivity and kinetics of activation between ANO6 and ANO1. To elucidate the role of the putative Ca2+-transferring reservoir in the Nt (Nt-CaRes), we constructed an ANO6-1-6 chimera in which Nt-CaRes was replaced with the corresponding domain of ANO1. ANO6-1-6 showed higher sensitivity to Ca2+ than ANO6. However, neither the speed of activation nor the voltage-dependence differed between ANO6 and ANO6-1-6. Molecular dynamics simulation revealed a reduced Ca2+ interaction with Nt-CaRes in ANO6 than ANO6-1-6. Moreover, mutations on potentially Ca2+-interacting acidic amino acids in ANO6 Nt-CaRes resulted in reduced Ca2+ sensitivity, implying direct interactions of Ca2+ with these residues. Based on these results, we cautiously suggest that the net charge of Nt-CaRes is responsible for the difference in Ca2+ sensitivity between ANO1 and ANO6.

• Korean journal of applied entomology
• /
• v.61 no.1
• /
• pp.117-128
• /
• 2022

In this study, we have examined pyrethroid actions on sodium channels in the pest insect Heliothis virescens. The synthetic pyrethroid permethrin increased steady-state sodium current in H. virescens central neurons and prolonged tail currents (I_Na-tail) due to extreme slowing of sodium channel deactivation. Prolongation of I_Na-tail was evident at permethrin concentrations as low as 60 nM, which modified ~1.7% of sodium channels and 10 μM permethrin modified about 30% of channels. The average time constant (τ₁) of tail current decay was ~335 ms for permethrin-modified channels. These modified channels activated at more negative potentials and showed slower activation kinetics, and failed to inactivate. Permethrin modification of sodium channels was dramatically potentiated by the α scorpion toxin LqhαIT, showing positive cooperativity between two binding sites. The amplitude of the tail current induced by 0.3 μM permethrin was enhanced ~8-fold by LqhαIT (200 pM). Positive cooperativity was also observed between permethrin and the insect-specific scorpion toxin AaIT as 10 nM permethrin potentiated the shift of voltage dependence caused by AaIT (~2-fold).

• Journal of the Korean Magnetics Society
• /
• v.17 no.3
• /
• pp.120-123
• /
• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.6
• /
• pp.252-259
• /
• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Current Photovoltaic Research
• /
• v.7 no.4
• /
• pp.97-102
• /
• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• Korean Journal of Materials Research
• /
• v.20 no.4
• /
• pp.210-216
• /
• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.12 no.6
• /
• pp.2739-2746
• /
• 2011

This paper proposes the method for more effectively calculating X/R which is the ratio of equivalent reactance(X) and resistance(R) of the bulk power system and analyses the characteristic of X/R values by applying the proposed method to the real bulk power systems. X/R is used to determine the rating of the relay in the bulk power systems and its value has been accepted to be big enough to ignore the equivalent resistance of the bulk power systems. However, X/R is calculated as a big number when only the upper transformer and transmission line are considered. The correct approach to calculating X/R needs to consider all the parameters including generators, transformers, lines and loads. This paper calculates X/R of the bulk power systems using dynamic models which have been used to analyse the power system stability. The effectiveness of the proposed method is verified by applying it to the test system and X/R values of the real bulk power systems are analyzed. In addition, the dependence of X/R on the closeness of its calculating locations to the generator is verified by using the marginal loss factor which has been used in the electricity market.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.15 no.6
• /
• pp.4013-4018
• /
• 2014

A 0.45 $cm^2$ DSSC device with a glass/FTO/blocking layer/$TiO_2$/N719(dye)/electrolyte/50 nm-Pt/50 nm-Au/FTO/glass was prepared to examine the stability of the Au/Pt bilayered counter electrode (CE) with electrolyte and the energy conversion efficiency (ECE) of dye-sensitized solar cells (DSSCs). For comparison, a 100 nm-thick Pt only CE DSSC was also prepared using the same method. The photovoltaic properties, such as the short circuit current density ($J_{sc}$), open circuit voltage ($V_{oc}$), fill factor (FF), and ECE, were checked using a solar simulator and potentiostat with time after assembling the DSSC. The microstructure of the Au/Pt bilayer was examined by optical microscopy after 0~25 minutes. The ECE of the Pt only CE-employed DSSC was 4.60 %, which did not show time dependence. On the other hand, for the Au/Pt CE DSSC, the ECEs after 0, 5 and 15 minutes were 5.28 %, 3.64 % and 2.09 %, respectively. The corrosion areas of the Au/Pt CE determined by optical microscopy after 0, 5, and 25 minutes were 0, 21.92 and 34.06 %. These results confirmed that the ECE and catalytic activity of Au/Pt CE decreased drastically with time. Therefore, a Au/Pt CE-employed DSSC may be superior to the Pt only CE-employed one immediately after integration of the device, but it would degrade drastically with time.