• Title/Summary/Keyword: void formation

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Silicon Melt Infiltration of Reaction-Bonded Silicon Carbide (반응소결 탄화규소에서 실리콘의 침윤향상)

  • 신현익;김주선;이종호;김긍호;송휴섭;이해원
    • Journal of the Korean Ceramic Society
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    • v.39 no.7
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    • pp.693-698
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    • 2002
  • Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.

Hydration, Strength and pH Properties of Porous Concrete Using Rice Husk Ash

  • Kim, Young-Ik;Sung, Chan-Yong
    • Journal of The Korean Society of Agricultural Engineers
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    • v.49 no.3
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    • pp.51-60
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    • 2007
  • This study was performed to evaluate void ratio, compressive and flexural strengths, and pH properties according to the content ratio of rice husk ash, aggregate size, and neutral treatment time of porous concrete with content of rice husk ash produced as an agricultural by-product. The SEM results for cement mortar with a 5% rice husk ash for the weight of cement formed more C-S-H hydrates due to the $SiO_2$ of rice husk ash. In the XRD test, cement mortar with a 5% rice husk ash for the weight of cement registered a higher peak point of approximately $2{\theta}=20{\sim}25^{\circ}$ compared to cement mortar without rice husk ash. According to the results of the XRD and SEM tests, the $SiO_2$ that was a major chemical element of rice husk ash generated a large amount of calcium hydroxide in the early stage of the hydration process of cement leading to the formation of ettringite. The void ratio of porous concrete with rice husk ash decreased with increasing content ratio of rice husk ash. In addition, the void ratio of porous concrete with rice husk ash decreased compared to porous concrete without rice husk ash. The compressive and flexural strength of porous concrete with a 5% and 10% content ratio of rice husk ash slightly increased compared to concrete without rice husk ash. The pH value of porous concrete rapidly decreased immediately after neutral treatment. Then, it gradually increased and decreased again after 14 days. However, the pH value was nearly the same regardless of neutral treatment time in 28 curing days. Also, for neutral treatment, the pH value of porous concrete showed appropriate pH levels (less than 9.5) in all mixtures for planting at 28 curing days.

Properties of Cu Pillar Bump Joints during Isothermal Aging (등온 시효 처리에 따른 Cu Pillar Bump 접합부 특성)

  • Eun-Su Jang;Eun-Chae Noh;So-Jeong Na;Jeong-Won Yoon
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.1
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    • pp.35-42
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    • 2024
  • Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Recent Progress in Pb-free Solders and Soldering Technology: Fundamentals, Reliability Issues and Applications

  • Kang Sung Kwon
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2004.09a
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    • pp.1-26
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    • 2004
  • The implementation of Pb-free solder technology is making good progress in electronic industry. Further understanding on fundamental issues on Pb-free solders/processes is required to reduce reliability risk factors of Pb-free solder joints. Several reliability issues including thermal fatigue, impact reliability, IMC growth, spalling, void formation are reviewed for Pb-free solder joints. Several applications of Pb-free technology are discussed, such as Pb-free, CBGA, CuCGA, flip chips, and wafer bumping by IMS.

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Preparation of PVDF Membrane by Thermally-Induced Phase Separation

  • Heo, Chi-Haeng;Lee, Kyung-Mo;Kim, Jin-Ho;Kim, Sung-Soo
    • Korean Membrane Journal
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    • v.9 no.1
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    • pp.27-33
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    • 2007
  • PVDF membrane formation via TIPS was performed for PVDF/DBP and PVDF/DMP systems. PVDF/DBP system showed solid-liquid phase separation behavior, while PVDF/DMP system has liquid-liquid phase separation characteristic as well as solid-liquid phase separation characteristic. PVDF contents and cooling conditions had great influence on structure, and the effects of each parameter were examined. Spherulitic structure was obtained due to the dominant PVDF crystallization. Diluent rejected to the outside of spherulite occupied the surface of the PVDF spherulites to result in the microporous spherulite formation and micro-void between spherulites. PVDF/DMP system had competitive solid-liquid and liquid-liquid phase separation depending on the cooling path.

Formation of Microporosities in Sputter-Deposited AgInSbTe Thin Films and Their Behavior (스퍼터 증착시킨 AgInSbTe 박막에서 미세기공의 형성과 그 거동)

  • Kim, Myong-R.;Seo, H.;Park, J. W.;Choi, W. S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.84-89
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    • 1996
  • The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

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Effect of Mn Addition on Sintering Properties of Ti-10wt.%Al-xMn Powder Alloy (Ti-10wt.%Al-xMn 분말합금의 Mn첨가에 따른 소결특성 평가)

  • Shin, Gi-Seung;Hyun, Yong-Taek;Park, Nho-Kwang;Park, Yong-Ho;Lee, Dong-Geun
    • Journal of Powder Materials
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    • v.24 no.3
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    • pp.235-241
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    • 2017
  • Titanium alloys have high specific strength, excellent corrosion and wear resistance, as well as high heat-resistant strength compared to conventional steel materials. As intermetallic compounds based on Ti, TiAl alloys are becoming increasingly popular in the aerospace field because these alloys have low density and high creep properties. In spite of those advantages, the low ductility at room temperature and difficult machining performance of TiAl and $Ti_3Al$ materials has limited their potential applications. Titanium powder can be used in such cases for weight and cost reduction. Herein, pre-forms of Ti-Al-xMn powder alloys are fabricated by compression forming. In this process, Ti powder is added to Al and Mn powders and compressed, and the resulting mixture is subjected to various sintering temperature and holding times. The density of the powder-sintered specimens is measured and evaluated by correlation with phase formation, Mn addition, Kirkendall void, etc. Strong Al-Mn reactions can restrain Kirkendall void formation in Ti-Al-xMn powder alloys and result in increased density of the powder alloys. The effect of Al-Mn reactions and microstructural changes as well as Mn addition on the high-temperature compression properties are also analyzed for the Ti-Al-xMn powder alloys.

A Study on Performance of Double-Core PBD for Improving Thick Reclaimed Ground (대심도 연약지반 개량을 위한 이중코어 PBD 성능연구)

  • Yang, Jeong-Hun;Hong, Sung-Jin;Lee, Woo-Jin;Choi, Hang-Seok;Kim, Hyung-Sub
    • Proceedings of the Korean Geotechical Society Conference
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    • 2008.03a
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    • pp.281-292
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    • 2008
  • Prefabricated Board Drains (PBDs) recently become more widely used than conventional sand drains in improving soft ground because the PBD is more time and cost effective. The performance of PBDs is affected by disturbance in the adjacent soil formation during inserting mandrels, the intrusion of fine particles into filter fabric, and necking of the drain by excessive lateral pressure especially occurring in very deep clay formation such as the Busan New Port site. In this study, the PBD with double-core is introduced, which seems to overcome the shortcomings of usual single-core PBDs. An in-situ test program was established in the Busan New Port site, in which a set of the double-core PBDs and the single-core PBDs was installed to compare the efficiency of each of the drains. The discharge capacity of the double-core and the single-core PBDs was compared for various confining pressures in the modified Delft test and the chamber test. A series of CRS consolidation tests was performed in order to obtain profiles of void ratio-effective stress and void ratio-permeability relationships in the Busan New Port site that are used as input date in performing a numerical program ILLICON. The numerically simulated settlements of ground surface in the test site are in good agreement with those of in-situ measurements. In addition, the performance of the double-core and single-core PBDs has been experimentally and numerically compared in this paper.

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Properties of Silicon Solar Cells with Local Back Surface Field Fabricated by Aluminum-Silicon Eutectic Alloy Paste (알루미늄-실리콘 공융 조성 합금 페이스트를 이용한 국부 후면 전계 태양전지 특성 분석)

  • Choi, Jae-Wook;Park, Sungeun;Bae, Soohyun;Kim, Seongtak;Park, Se Jin;Park, Hyomin;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.4 no.4
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    • pp.145-149
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    • 2016
  • Characteristic of aluminum-silicon alloy paste which is applied on the rear side of PERC cell was investigated. The paste was made by aluminum-silicon alloy with eutectic composition to avoid the formation of void which is responsible for the degradation of the open-circuit voltage. Also, the glass frit component of the paste was changed to improve the adhesion of aluminum-silicon paste. We observed the formation of void and local back surface field between aluminum electrode and silicon base by SEM. The light IV, quantum efficiency and reflectance of the solar cells were characterized and compared for each paste.