• 전자공학회논문지A
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• 제29A권3호
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• pp.72-78
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• 1992

The Silicon vertical Hall devices are fabricated using standard bipolar process and characterized in terms of the Hall voltage, sensitivities, and offset voltage. The Hall voltage and sensitivity of the devices showed good linearity with respect to the magnetic flux density and reverse supply voltage Vr. The sensitivity of device with P$^{+}$ isolation dam has been increased up to 1.2 times compared to that of device without the dam. With the condition of V$_{r}$=-5.0[V], B=0.4[T] and I$_{sup}$=1.0[mA], the Hall voltage and sensitivity of the device with P$^{+}$ isolation dam were about 29[mV] and 74[V/AT], respectively. These vertical Hall devices can be used as the adjustable magnetic fields sensor.

• 센서학회지
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• 제23권6호
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• pp.392-396
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• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 센서학회지
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• 제20권4호
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Journal of electromagnetic engineering and science
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• 제18권1호
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• pp.35-40
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• 2018

This study presents a vertical-type CMOS Hall device with improved sensitivity to detect a 3D magnetic field in various types of sensors or communication devices. To improve sensitivity, trenches are implanted next to the current input terminal, so that the Hall current becomes maximum. The effect of the dimension and location of trenches on sensitivity is simulated in the COMSOL simulator. A vertical-type Hall device with a width of $16{\mu}m$ and a height of $2{\mu}m$ is optimized for maximum sensitivity. The simulation result shows that it has a 23% better result than a conventional vertical-type CMOS Hall device without a trench.

• 한국정보통신학회논문지
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• 제12권10호
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• pp.1890-1896
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• 2008

본 연구는 칩 표면에 수평 한 자기장을 검출하는 종형 Hall 소자를 바이폴라 기술로 제조하여 동작 및 잡음 특성을 조사하였다. P+ Isolation 댐을 설치한 소자(type B)가 설치하지 않는 소자(type A)보다 자기 감도는 약 1.2배 증가하였고, 역시 잡음도 증가하였다. 측정된 이 종형 Hall소자의 자기 검출 분해능은 f=1[KHz], 대역폭 1[Hz] 구동조건에서 type A는 약 $0.97[{\mu}T]$, type B는 $1.25[{\mu}T]$였다. 따라서 Hall 소자 구조 설계나 재료적인 면에서 볼 때, 낮은 잡음즉, 자기 검출분해능과 높은 감도 상관관계를 고려하여야 한다.

• Nuclear Engineering and Technology
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• 제48권5호
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• pp.1237-1251
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• 2016

Although the horizontal component of an earthquake response can be significantly reduced through the use of conventional seismic isolators, the vertical component of excitation is still transmitted directly into the structure. Records from instrumented structures, and some recent tests and analyses have actually seen increases in vertical responses in base isolated structures under the combined effects of horizontal and vertical ground motions. This issue becomes a great concern to facilities such as a Nuclear Power Plants (NPP), with specialized equipment and machinery that is not only expensive, but critical to safe operation. As such, there is considerable interest worldwide in vertical and three-dimensional (3D) isolation systems. This paper examines several vertical and 3D isolation systems that have been proposed and their potential application to modern nuclear facilities. In particular, a series of case study analyses of a modern NPP model are performed to examine the benefits and challenges associated with 3D isolation compared with horizontal isolation. It was found that compared with the general horizontal isolators, isolators that have vertical frequencies of no more than 3 Hz can effectively reduce the vertical in-structure responses for the studied NPP model. Among the studied cases, the case that has a vertical isolation frequency of 3 Hz is the one that can keep the horizontal period of the isolators as the first period while having the most flexible vertical isolator properties. When the vertical frequency of isolators reduces to 1 Hz, the rocking effect is obvious and rocking restraining devices are necessary.

• 한국결정성장학회지
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• 제34권6호
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• pp.272-280
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• 2024

인화 인듐 (Indium phosphide, InP)은 약 1.36 eV의 에너지 밴드갭(bandgap)을 갖는 III-V족의 직접형(direct bandgap) 반도체이며, 광통신 대역의 1,550 nm 파장 등 근적외선 파장 대역의 광반도체 제조에 필요한 기판소재로서 매우 중요한 소재이다. 이러한 근적외선 파장영역은 자율주행 자동차용 라이다(LiDAR), 광통신 반도체 레이저, 의료용 반도체 레이저, 반도체 광검출기, 미사일 탑재 적외선 탐색기, 군사용 고출력 레이저 및 각종 센서 등에 광범위하게 응용되고 있다. 본 연구에서는 황(Sulfur, S)이 도핑된 n-형 반도체인 InP를 고압 수직 브리지만 방식(Vertical Bridgman Method, VB법)으로 성장시켰으며, 이를 2인치 기판형태로 절단하여 기판 위의 위치에 따라서 5개의 시료로 준비하여 특성분석을 수행하였다. 성장된 소재의 특성은 결정학적, 전기적, 광학적인 영역으로 나누어 분석을 수행하였다. X선 회절 분석(X-ray diffraction, XRD), 투과전자현미경(Transmission Electron Microscopy, TEM) 분석, 전위밀도(Etch Pit Density, EPD) 측정, 캐리어 농도 및 전기전도도, 전자이동도 분석, 가변 여기 파장 형광분석(Photoluminescence Excitation, PLE), 시간분해 형광분석(Timeresolved Photoluminescence, TR-PL) 등을 활용하여 해당 기판 소재의 특성 분석을 수행하였다. 성장된 n-InP 기판소재는 (100) 방향의 갖는 Zincblend 구조를 갖는 단결정으로 판단된다. 또한 캐리어 농도, 전기전도도, 전기이동도 등 전기적 특성은 우수한 편으로 분석되었다. 그러나 해외 기판소재와 비교해 볼 때, 측정된 EPD 값과 HR-XRD의 피크 값의 각도(2θ) 반치폭이 상대적으로 크며, TR-PL에서 측정한 형광 수명이 상대적으로 짧다. 이는 본 성장 기판소재의 결정의 전위 밀도 등 상당한 양의 결함이 존재함을 의미하여 고품질 기판소재 제조를 위해서 성장 조건 최적화가 추가로 필요할 것으로 판단된다.