• Title/Summary/Keyword: varying bias

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Estimating the State-of-Charge of Lithium-Ion Batteries Using an H-Infinity Observer with Consideration of the Hysteresis Characteristic

  • Xie, Jiale;Ma, Jiachen;Sun, Yude;Li, Zonglin
    • Journal of Power Electronics
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    • v.16 no.2
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    • pp.643-653
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    • 2016
  • The conventional methods used to evaluate battery state-of-charge (SOC) cannot accommodate the chemistry nonlinearities, measurement inaccuracies and parameter perturbations involved in estimation systems. In this paper, an impedance-based equivalent circuit model has been constructed with respect to a LiFePO4 battery by approximating the electrochemical impedance spectrum (EIS) with RC circuits. The efficiencies of approximating the EIS with RC networks in different series-parallel forms are first discussed. Additionally, the typical hysteresis characteristic is modeled through an empirical approach. Subsequently, a methodology incorporating an H-infinity observer designated for open-circuit voltage (OCV) observation and a hysteresis model developed for OCV-SOC mapping is proposed. Thereafter, evaluation experiments under FUDS and UDDS test cycles are undertaken with varying temperatures and different current-sense bias. Experimental comparisons, in comparison with the EKF based method, indicate that the proposed SOC estimator is more effective and robust. Moreover, test results on a group of Li-ion batteries, from different manufacturers and of different chemistries, show that the proposed method has high generalization capability for all the three types of Li-ion batteries.

Electrical and Optical Characteristics of Inductively Coupled Plasma by Ar Gas Pressure and Rf Power (Ar 가스 압력과 RF 전력에 따른 유도결합형 플라즈마의 전기적 및 광학적 특성)

  • 최용성;허인성;이영환;박대희
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.560-566
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    • 2004
  • In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of -100V∼+100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

Ferroelectricity of Bi-doped ZnO Films Probed by Scanning Probe Microscopy

  • Ben, Chu Van;Lee, Ju-Won;Kim, Jung-Hoon;Yang, Woo-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.323-323
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    • 2012
  • We present ferroelectricity of Bi-doped ZnO film probed by piezoresponse force microscopy (PFM), which is one of the Scanning Probe Microscopy techniques. Perovskite ferroelectrics are limited to integration of devices into semiconductor microcircuitry due to hard adjusting their lattice structure to the semiconductor materials. Transition metal doped ZnO film is one of the candidate materials for replacing the perovskite ferroelectrics. In this study, ferroelectric characteristics of the Bi-doped ZnO grown by pulsed laser deposition were probed by PFM. The polarization switching and patterning of the ZnO films were performed by applying DC bias voltage between the AFM tips and the films with varying voltages and polarity. The PFM contrast before and after patterning showed clearly polarization switching for a specific concentration of Bi atoms. In addition, the patterned regions with nanoscale show clearly the local piezoresponse hysteresis loop. The spontaneous polarization of the ZnO film is estimated from the local piezoresponse based on the comparison with LiNbO3 single crystals.

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Effects of Thermal Treatment on Structural Properties of DLC Films Deposited by FCVA Method (FCVA 방법으로 증착된 DLC 박막의 열처리에 따른 구조적 물성 분석)

  • 김영도;장석모;박창균;엄현석;박진석
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.8
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    • pp.325-329
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    • 2003
  • Effects of thermal treatment on the structural properties of diamond-like carbon (DU) films were examined. The DLC films were deposited by using a modified filtered cathodic vacuum arc (FCVA) deposition system and by varying the negative substrate bias voltage, deposition time, and nitrogen flow rate. Thermal treatment on DLC films was performed using a rapid thermal annealing (RTA) process at $600^{\circ}C$ for 2min. Raman spectroscopy, x-ray photoemission spectroscopy (XPS), atomic force microscope (AFM), and surface profiler were used to characterize the I$_{D}$I$_{G}$ intensity ratio, sp$^3$ hybrid carbon fraction, internal stress, and surface roughness. It was found for all the deposited DLC films that the RTA-treatment results in the release of internal compressive stress, while at the same time it leds to the decrease of sp$^3$ fraction and the increase of I$_{D}$I$_{G}$ intensity ratio. It was also suggested that the thermal treatment effect on the structural property of DLC films strongly depends on the diamond-like nature (i.e., sp$^3$ fraction) of as-deposited film.ed film.

Needs for Changing Accident Investigation from Blaming to Systems Approach

  • Kee, Dohyung
    • Journal of the Ergonomics Society of Korea
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    • v.35 no.3
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    • pp.143-153
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    • 2016
  • Objective: The purposes of this study are to survey needs for changing accident investigation from blaming to systems approach and to briefly summarize systems-based accident analysis techniques. Background: In modern complex socio-technical systems, accidents are caused by a variety of contributing factors including human, technical, organizational, social factors, not by just a single violation or error of a specific actor, but accidents investigation used to be focused on the incorrect action of individuals. A new approach investigating causes of accidents as a symptom of a deficient system is required. Method: This study was mainly based on survey of literatures related to accidents, accidents investigation, which included academic journals, newspapers, etc. Results: This study showed that accidents investigation of Korea focusing on blaming is problematic. This was confirmed by two concepts of migration and hindsight bias frequently found in accident causation studies, and an attribute of accidents having varying causes. This was illustrated with an example of Sewol ferry capsizing accident. Representative systems-based accident analysis models including Swiss cheese model, AcciMap, HFACS, FRAM and STAMP were briefly introduced, which can be used in systematic accidents investigations. Finally, this study proposed a procedure for establishing preventive measures of accidents, which was composed of two steps: public inquiry and devising preventive measures. Conclusion: A new approach considering how safety-critical components such as technical and social elements, and their interactions lead to accidents is needed for preventing reoccurrence of similar accidents in complex socio-technical systems. Application: The results would be used as a reference or guideline when the safety relevant governmental organizations investigate accidents.

The Etching Characteristics of the TaN Thin Films Using Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성)

  • Li, Chen;Joo, Young-Hee;Woo, Jong-Chang;Kim, Han-Soo;Choi, Kyung-Rok;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.1
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    • pp.1-5
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    • 2013
  • In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

A Novel discharging MEMS device & glow discharge properties (미소간극을 갖는 MEMS 방전 소자 제작 및 특성 연구)

  • Kim, Joo-Hwan;Moon, Hyoung-Sik;Kim, Young-Min
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.46-48
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    • 2004
  • A micro-scale discharge device has been fabricated using MEMS technology and failure mechanisms during DC discharge are investigated for the microstructure. The failure of sustaining the plasma is mainly caused by either open or short of the micro-electrodes, both resulting from the sputtered metal atoms during the DC discharge. The glow discharge lifetime of the microstructures is found to depend on bias circuit scheme as well as the electrode structure. Based on the understanding of the failure mechanism, a novel microstructure is suggested to improve discharge lifetime and the longer lifetime is experimentally demonstrated. In addition to the failure mechanism, an electric breakdown between two electrodes with microns gap are studied using micromachined metal structures. The electrode gap is able to be accurately controlled by thickness of a sacrificial layer and the electric breakdown was measured while varying the gap from $2{\mu}m$ to $20{\mu}m$. The electric breakdown behavior was found to highly depend on the electrode material, which was not considered in Paschen's law.

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Characteristics of Plasma etching and Fabrication of Superconducting Flux Flow Transistor (플라즈마 식각 특성과 이를 이용한 초전도 자속 흐름 트랜지스터)

  • Kang, H.G.;Park, C.B.;Lee, K.S.;Kim, H.G.;Hwang, C.S.;Han, B.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.138-141
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    • 2002
  • The channel of the superconducting Flux Flow Transistor has been fabricated with plasma etching method using ICP. The ICP conditions were 700 W of ICP power, 150 W of rf chuck power, 5 mTorr of the pressure in chamber and 1:1 of Ar : $Cl_2$, respectively. The channel etched by plasma gas showed superconducting characteristics of over 77 K and superior surface morphology. The critical current of SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained $r_m$ values were smaller than $0.1\Omega$ at a bias current of 40 mA. The current gain was about 0.5. Output resistance was below $0.2\Omega$.

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Deep Unsupervised Learning for Rain Streak Removal using Time-varying Rain Streak Scene (시간에 따라 변화하는 빗줄기 장면을 이용한 딥러닝 기반 비지도 학습 빗줄기 제거 기법)

  • Cho, Jaehoon;Jang, Hyunsung;Ha, Namkoo;Lee, Seungha;Park, Sungsoon;Sohn, Kwanghoon
    • Journal of Korea Multimedia Society
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    • v.22 no.1
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    • pp.1-9
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    • 2019
  • Single image rain removal is a typical inverse problem which decomposes the image into a background scene and a rain streak. Recent works have witnessed a substantial progress on the task due to the development of convolutional neural network (CNN). However, existing CNN-based approaches train the network with synthetically generated training examples. These data tend to make the network bias to the synthetic scenes. In this paper, we present an unsupervised framework for removing rain streaks from real-world rainy images. We focus on the natural phenomena that static rainy scenes capture a common background but different rain streak. From this observation, we train siamese network with the real rain image pairs, which outputs identical backgrounds from the pairs. To train our network, a real rainy dataset is constructed via web-crawling. We show that our unsupervised framework outperforms the recent CNN-based approaches, which are trained by supervised manner. Experimental results demonstrate that the effectiveness of our framework on both synthetic and real-world datasets, showing improved performance over previous approaches.

Low Temperature Growth of MCN(M=Ti, Hf) Coating Layers by Plasma Enhanced MOCVD and Study on Their Characteristics (플라즈마 보조 유기금속 화학기상 증착법에 의한 MCN(M=Ti, Hf) 코팅막의 저온성장과 그들의 특성연구)

  • Boo, Jin-Hyo;Heo, Cheol-Ho;Cho, Yong-Ki;Yoon, Joo-Sun;Han, Jeon-G.
    • Journal of the Korean Vacuum Society
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    • v.15 no.6
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    • pp.563-575
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    • 2006
  • Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.