• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 1996.06a
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• pp.223-227
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• 1996

In this paper we propose an adaptive fast image restoration filter, which is suitable for reducing the blocking artifacts in the compressed image in real-time. The proposed restoration filter is based on the observation that quantization operation in a series of coding process is a nonlinear and many-to-one mapping operator. And then we propose an approximated version of constrained optimization technique as a restoration process for removing the nonlinear and space varying degradation operator. We also propose a novel block classification method for adaptively choosing the direction of a highpass filter, which serves as a constraint in the optimization process. The proposed classification method adopts the bias-corrected maximized likelihood, which is used to determine the number of regions in the image for the unsupervised segmentation. The proposed restoration filter can be realized either in the discrete Fourier transform domain or in the spatial domain in the form of a truncated finite impulse response (FIR) filter structure for real-time processing. In order to demonstrate the validity of the proposed restoration filter experimental results will be shown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1720-1725
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• 2015

The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO₂, Gd₂O₃, and Si₃N₄ films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si₃N₄ dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.3
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• pp.311-317
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• 2014

In this paper, the flexible and reconfigurable frequency selective surface for C-band was designed using patch array and grid structure for radome and other curved surface applications. Frequency reconfigurability was obtained by varying the capacitance of varactor diode and flexibility is implemented by using flexible PCB. For the validity of the proposed structure, we fabricated the flexible and reconfigurable frequency selective structure and measured the frequency reconfigurability for different bias voltages and different curvature surfaces from the optimized design parameters. From the measurement results, we know that the proposed structure has the wideband reconfigurable frequency bandwidth of 6.05-7.08GHz. We can apply this proposed structure to the curved surface like as radome of aircraft or warship.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1111-1114
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• 2003

In this paper, electrical characteristics of inductively coupled plasma in an electrodeless fluorescent lamp were investigated using a Langmuir probe with a variation of argon gas pressure. The RF output was applied in the range of $5{\sim}50W$ at 13.56MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of $-100V{\sim}+100V$. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from l0W to 30W. Also, when the RF power was increased, electron density was increase. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• Asian-Australasian Journal of Animal Sciences
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• v.15 no.7
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• pp.925-931
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• 2002

Gibbs sampling algorithms were implemented to the multi-trait threshold animal models with any combinations of multiple binary, ordered categorical, and linear traits and investigate the amount of bias on these models with two kinds of parameterization and algorithms for generating underlying liabilities. Statistical models which included additive genetic and residual effects as random and contemporary group effects as fixed were considered on the models using simulated data. The fully conditional posterior means of heritabilities and genetic (residual) correlations were calculated from 1,000 samples retained every 10th samples after 15,000 samples discarded as "burn-in" period. Under the models considered, several combinations of three traits with binary, multiple ordered categories, and continuous were analyzed. Five replicates were carried out. Estimates for heritabilities and genetic (residual) correlations as the posterior means were unbiased when underlying liabilities for a categorical trait were generated given by underlying liabilities of the other traits and threshold estimates were rescaled. Otherwise, when parameterizing threshold of zero and residual variance of one for binary traits, heritability estimates were inflated 7-10% upward. Genetic correlation estimates were biased upward if positively correlated and downward if negatively correlated when underling liabilities were generated without accounting for correlated traits on prior information. Residual correlation estimates were, consequently, much biased downward if positively correlated and upward if negatively correlated in that case. The more categorical trait had categories, the better mixing rate was shown.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.75-80
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• 2008

In this work, we optimized a microbolometer for application of a $CO_2$ detector by using MEMS technology. We fabricated a stable thermal isolation structure by varying the lengths of supporting legs which affect bolometer performance. We could fabricate more stable thermal isolation structure for the microbolometer through the results of ANSYS simulations, and minimize the fabrication processes by using bulk micromachining to use a $CO_2$ detector. The microbolometer shows a detectivity of $2.5{\times}109$ cmHz$^{1/2}$/W at a chopper frequency of 8 Hz and a bias current of $6.25\;{\mu}A$ with a vacuum package of about $3.0{\times}10.3$ torr. Therefore, we put to conclusion that the microbolometer optimized in this experiment could be useful for the application of a $CO_2$ detector.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.197-200
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• 2005

As Plasma Immersion ion Implantation (PIII) using a conducting grid is very useful to reduce the effect of capacitance and charging in surface modification. If the bias voltage applied to the conducting grid is in the range of hundreds of volts, the effects of surface charge and space charge substantially affect the incident ion energy and ion current to the surface. In this paper, through an 1d and a 2d PIC simulation the time varying formation of the space charge and surface charge is analyzed. Experiment with the optimally designed grid on the basis of the simulation results is conducted, and the results of both cases with grid and without grid are compared. In our work with Poly Urethane(PU), the improvement of adhesion is yielded by increasing surface roughness and decreasing Si component of PU.