• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.2
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• pp.104-112
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• 2002

In this paper, it is suggested that the selection method of parameter of Power System Stabilizer(PSS) with robustness in low frequency oscillation for Thyristor Controlled Series Capacitor(TCSC) using Geletic Algorithm(GA). A TCSC meddle consists of a stories capacitor and a parallel path with a thyristor valve and a series inductor. Also in in parallel, as is typical with series capacitor applications, is a metal-oxide varistor(MOV) for overvoltage protection. The proposed PSS parameters are optimized using GA in order to maintain optimal operation of TCSC which is expected to be applied in transmission system to achieve a number of benefits under the various operating conditions. In order to verify the robustness of the proposed method, we considered the dynamic response of angular velocity deviation and terminal voltage deviation under a power fluctuation and rotor angle variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.46-49
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• 2005

This paper presents the electrical characteristics of metal oxide varistors for lightning surge arresters. ZnO varistors were fabricated with typical ceramic production methods and two types of varistors were also prepared to be compared. The nominal discharge current and line discharge class of those varistors are $10kA(8/20{\mu}s)$ and class 3, respectively. The diameter of varistors manufactured and prepared were in the range of 61.6~65.0mm and the thickness of those were in the range of 27~42.52mm. The reference and residual voltage were tested and reference and residual voltage per 1mm and the ratio of reference and residual voltage were calculated. The reference voltage per 1mm of varistors manufactured was about 175V/mm but that of A's and B's varistors was nearly 200V/mm. The residual voltage exhibited the same trends as the reference voltage, so the reference and residual voltage per 1mm of domestic varistors should be increased. According to the results of tests, it is thought that if the reference and residual voltage per 1mm were increased to 200V/mm and 330V/mm, domestic ZnO varistors would be possible to apply to the station class arresters in the near future.

• Journal of the Korean Society of Safety
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• v.27 no.3
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• pp.57-62
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• 2012

The purpose of this paper is to find dangerous factors of a water purifier when water leaks due to inappropriate use and analyze the patterns of damaged parts in order to provide data for the examination of the cause of the problem. If the water purifier is inspected and managed by a non-specialist, when the FLC(Float Level Controller) at the top is inclined, water leakage may occur to the water purifier. The leaked water flows onto the cables and hoses and enters the thermostat terminal, heater, PCB, power supply connection connector, etc., becoming a dangerous factor that may cause a system failure, fire, etc. Due to the water that entered the input terminal, low noise and white smoke were generated at first. However, the flame gradually propagated due to the continuous inflow of moisture. It was found that when moisture reached the PCB, a carbonized conductive path was formed at the varistor terminal, input terminal, semiconductor device terminal, etc., and the flame became larger, which might result in a fire. From the metal microscope analysis of a damaged condenser terminal, it was found that the amorphous structure unique to copper cable disappeared, and voids, boundary surface and disorderly fine particles occurred. Also, in the case of the connector into which moisture penetrated, fusion and deformation occurred at the cable connection clips. The result of analysis of the power supply cable connector using a thermal image camera showed that most of the heat was generated from the cable connection clips and the temperature at the connection center was normal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.206-213
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• 2000

The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.271-274
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• 2000

Gas sensor materials capable of detecting hydrogen gases (H$_2$) or nitrogen oxides (NO$\_$x/, primarily NO and NO$_2$) with high sensitivity have attracted much interest in conjunction with the growing concern to the protection of global environments. Beside conventional sensor materials, such as semiconductors., conducting polymers and solid electrolytes, the potential of sensor materials with a new method for detecting hydrogen gases or nitrogen oxides gas has also been tested. The breakdown voltage of porous varistors shifted to a low electric field upon exposure to H$_2$ gas, whereas it shifted to a reverse direction in an atmosphere containing oxidizing gases such as O$_3$ and NO$_2$ in the temperature range of 300 to 600$^{\circ}C$. Furthermore, it was found that the magnitude of the breakdown voltage shift, i. e. the magnitude of sensitivity, was well correlated with gas concentration, and that the H$_2$ sensitivity was improved by controlling the composition of the Bi$_2$O$_3$ rich grain boundary phase. However, NO$\_$x/ sensing properties of porous varistors have not been studies in detail. The objective of the present study is to investigate the effect of the composition of the Bi$_2$O$_3$ rich grain boundary phase and other additive such as A1$_2$O$_3$ on the hydrogen gases (H$_2$) sensing properties of porous ZnO based varistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.100-106
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• 2013

In this paper, in order to analyze lightning impulse response characteristics in combined installations of SPDs and RCDs, surge protection coordination between SPDs and RCDs are experimentally investigated by using the combination wave generator. Six different types of single-phase residual current operated circuit-breakers with integral overcurrent protection for household and similar uses(RCBOs) being present on the domestic market are tested according to KS C IEC 61009-1 standard. As a result, when a class I SPD is located on the source side of an RCBO, all kinds of specimens are able to provide the proper coordination between the SPD and RCBOs without nuisance tripping, unintended operation or damage due to test impulse currents. However, in the case that the class II SPD is located on the load side of RCBOs, a lot of L-N mode injected currents is split into the RCBO, and a few RCBOs are damaged. Coordination between SPDs and RCDs is not valid and a role of SPDs is of no use. When combining SPDs with RCDs, it is necessary to select SPDs and RCDs in consideration of the protection voltage level of metal oxide varistor embedded in RCDs.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.586-591
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• 2019

This study describes the doping effect of $Yb_2O_3$ on microstructure, electrical and dielectric properties of $ZnO-V_2O_5-MnO_2-Nb_2O_5$ (ZVMN) ceramic semiconductors sintered at a temperature as low as $900^{\circ}C$. As the doping content of $Yb_2O_3$ increases, the ceramic density slightly increases from 5.50 to $5.54g/cm^3$; also, the average ZnO grain size is in the range of $5.3-5.6{\mu}m$. The switching voltage increases from 4,874 to 5,494 V/cm when the doping content of $Yb_2O_3$ is less than 0.1 mol%, whereas further doping decreases this value. The ZVMN ceramic semiconductors doped with 0.1 mol% $Yb_2O_3$ reveal an excellent nonohmic coefficient as high as 70. The donor density of ZnO gain increases in the range of $2.46-7.41{\times}10^{17}cm^{-3}$ with increasing doping content of $Yb_2O_3$ and the potential barrier height and surface state density at the grain boundaries exhibits a maximum value (1.25 eV) at 0.1 mol%. The dielectric constant (at 1 kHz) decreases from 592.7 to 501.4 until the doping content of $Yb_2O_3$ reaches 0.1 mol%, whereas further doping increases it. The value of $tan{\delta}$ increases from 0.209 to 0.268 with the doping content of $Yb_2O_3$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.93-102
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• 2018

This paper reports a Surge Protective Device (SPD) that is used to protect an automatic metering interface (AMI) power supplies of communication equipment on a low-voltage distribution system from a lightning current. The surge protective device (SPD) can be classified as one-port SPDs and two-port SPDs with decoupling elements depending on the connection type. The protection of internal systems against the lightning current may require a systematic approach consisting of coordinated SPDs. To deal with this, the definition of a lightning protection zone (LPZ) was studied and interpreted through a theoretical review. Because the lightning current resulting from a lightning surge is considerably high, there is limited protection from one SPD; therefore, coordinated cascaded MOV-based SPDs are installed to solve this problem. Regarding the power grid mentioned in this paper, a class II SPD for the low-voltage distribution system installed on the border of LPZ1 and LPZ2, which establish a protection coordination with the Arrester (LA, SA) that corresponds to the LPZO installed on the MOF stage connected to one system were designed to protect various communication (control) equipment, including the automatic meter reading system inside the branch-type electric supply panel of a building, not the incoming side of one system. In addition, performance-related tests were done by a comparison with the existing method through testing, and the optimal design was achieved for the 1-port SPD that uses a series connection and can bleed load current without any decoupling element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.74-80
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• 2017

This study focuses on the effects of doping $Zn_2BiVO_6$ and $Co_3O_4$ on the sintering and electrical properties of ZnO; where, ZZ consists of 0.5 mol% $Zn_2BiVO_6$ in ZnO, and ZZCo consists of 1/3 mol% $Co_3O_4$ in ZZ. As ZnO was sintered at about $800^{\circ}C$, the liquid phases, which are composed of $Zn_2BiVO_6$ and $Zn_2BiVO_6$-rich phases, were found to be segregated at the grain boundaries of sintered ZZ and ZZCo, respectively, which demonstrates that $V_o^{\cdot}$(0.33~0.36 eV) are formed as dominant defects according to the analysis of admittance spectroscopy. As $Co_3O_4$ is doped to ZZ, the resistivity of ZnO decreases to ~38%, while donor density ($N_d$), interface state density ($N_t$), and barrier height (${\Phi}_b$) increase twice higher than those of ZZ, according to C-V characteristics. This result harbingers that ZZCo and its derivative compositions will open the gate for ZnO to be applied as more progressive varistors in the future, as well as the advantageous opportunity of manufacturing ZnO chip varistors at lower sintering temperatures below $900^{\circ}C$.