• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1357-1359
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• 2009

Many researchers studied cell culturing on surfaces with chemical functional groups. Previously, we reported surface properties of plasma polymerized ethylenediamine (PPEDA) films deposited by plasma enhanced chemical vapor deposition with various plasma conditions. Surface properties of PPEDA films can be controlled by plasma power during deposition. In this work, to analyze correlation of cell adherence/proliferation with surface property, we cultured rat intestinal epithelial cells-18 on the PPEDA films deposited with various plasma powers. It was shown that as plasma power was decreased, density of cells cultured on the PPEDA film surface was increased. Our findings indicate that plasma power changed the amine density of the PPEDA film surface, resulting in density change of cells cultured on the PPEDA film surface.

• Journal of the Korean Chemical Society
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• v.38 no.7
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• pp.473-479
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• 1994

Tungsten thin film was deposited on p-(100) silicon substrate by using the LPCVD(low pressure chemical vapor deposition) technique. $WF_6$ was used as a source gas for tungsten and $SiH_4$ was used as a reducing gas for $WF_6$. Tungsten thin film was deposited by either SiH4 or Si substrate reduction of $WF_6$ under cold-wall condition and it was deposited by $SiH_4$ reduction of $WF_6$ under hot-wall condition. The crystal structure of deposited thin film under both conditions were identified to be bcc (body centered cubic). The physical and electrical properties of deposited thin films were investigated. The deposited film under hot-wall condition changed to $WSi_2$ film by the annealing under $800^{\circ}C.$ From the experimental results and theoretical considerations, the change of the crystal structure of the thin film by annealing was discussed. $WSi_2$ thin film, which was known to have good compatibility with Si substrate, could be produced under hot-wall condition although the film properties were superior under cold-wall condition.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.957-961
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• 2004

In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.235-241
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• 1989

A study on the APCVD(atmospheric pressure chemical vapor deposition) Al2O3 was done by using the aluminum-tri-isopropoxide/N2 reaction system at 40$0^{\circ}C$. When the flow rate of the carrier gas(N2) was over 2SLPM, heterogeneous reaction was observed. However, when the flow rate of the carrier gas was below 2SLPM, a porously deposited film or powder formation was observed. The film formed by a heterogeneous reaction was optically dense. The dense film is thought to be a kind of a hydrated alumina. After a thermal treatment of the film in the range of temperature from $600^{\circ}C$ to 1, 20$0^{\circ}C$, properties of the film seems to be changed due to dehydration and densification process. In the case of the powder on heat treatment(600~1, 20$0^{\circ}C$), both a phase transformation and the change of OH peak was observed.

• ETRI Journal
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• v.27 no.5
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• pp.545-550
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• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• Transactions on Electrical and Electronic Materials
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• v.2 no.1
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.

• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.