Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD)

MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착

  • Yoon, Su-Jong (Dept. of Nanomaterials Engineering, Pusan National University) ;
  • Kim, Tae-Gyu (Dept. of Nanosystem Engineering, Pusan National University)
  • 윤수종 (부산대학교 나노정보소재공학과) ;
  • 김태규 (부산대학교 나노시스템공정공학과)
  • Published : 2008.04.30
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Abstract

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

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References

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