• The Journal of the Petrological Society of Korea
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• v.18 no.4
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• pp.337-348
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• 2009

Clear and homogeneous glass inclusions are well preserved at the rim of the quartz phenocrysts of tuff from Sunshin epithermal Au deposit, Haenam, although the host rocks experienced extensive silicification and argillic alteration. Glass inclusion vary in size from $5\;{\mu}m$ to larger than $200\;{\mu}m$ consisting of glass(60~80 vol%) + vapor bubble(15~30 vol%) $\pm$ daughter crystals(<10 vol%). Most of glass inclusions are cubic to rectangular in shape, indicating that the host quartz grew in the stability field of $\beta$-quartz. All the glass inclusions appear to be primary. Glass inclusions are composed of highly evolved high-K calc-alkaline rhyolites, which can represent the final liquidus phase of the magma system. The $Au_2O_3$ concentration (<0.30 wt%) is trivial in the glass, indicating there was no enrichment in the final residual melt. Textural characteristics suggest that magma was water-saturated shortly before or during the eruption. $H_2O$ content of the glass (ca. 2-4 wt%) suggests a water saturation pressure($P_{H2O}$) of about 300-900 bars. This pressure implies a minimum depth of 0.8-2.5 km for the magma chamber.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1202-1207
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• 2003

Using a recently developed Hybric Plasma-Particle Accelerating Impact Deposition (HP-PAID) process, synthesis of nanostructured silicon coatings has been investigated by injecting vapor-phase TEOS (tetraethosysilane, (C$_2$H$\_$5/O)$_4$Si) into an Ar hybrid plasma. The plasma jet with reactants was expanded through nozzle into a deposition chamber, with the pressure dropping from 700 to 10 torr. Ultrafine particles accelerated in the free jet downstream of the nozzle, deposited by an inertial impaction onto a temperature controlled substrate. By using this process, nanostructured amorphous silicon coatings with grain size smaller than 10 nm could be synthesized. These samples were annealed in an Ar and crystallized at 900$^{\circ}C$ for 30 min. TEM analysis showed that the annealed coatings were also composed of nanoparticles smaller than 10 nm, which showed a good consistency that the average grain size of 7 nm was also estimated from a peak shift of 2.39 cm$\^$-1/ and Full Width at Half Maximum (FWHM) 5.92 cm$\^$-1/ of Raman analysis. The noteworthy is that a strong PL peak at 398 nm was also obtained for this sample, which indicates that the deposited coatings also contained 3∼4 nm nanostructured grains.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.121-125
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• 2009

Amorphous $Ge_1$_$_xMn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to $700^{\circ}C$ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at $500^{\circ}C$ for 3 minutes and they were crystallized when annealing temperature increase to $600^{\circ}C$. Temperature dependence of resistivity measurement implied that as-grown and annealed $Ge_1$_$_xMn_x$ films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The $700^{\circ}C$-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ${\sim}$8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.182-182
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• 2016

철강은 기본적으로 강도가 우수하고 그 매장량이 풍부할 뿐만 아니라 대량생산이 가능하다 또한 다른 금속과 합금을 구성하여 또 다른 특성을 부여할 수 있기 때문에 현재 전 세계 금속 생산량의 95%를 차지할 정도로 많이 사용되며, 각종 산업과 기술이 발달함에 따라 그 중요도는 점점 더 커져가고 있다. 하지만 철강은 사용 환경 중 부식에 의해 그 수명과 성능이 급격히 저하되기 때문에 내식성을 향상시키기 위하여 도장이나 도금 등의 표면처리를 포함한 다양한 방법이 적용되고 있다. 그 중 철강재의 도금 표면처리방법은 주로 아연을 이용한 용융도금이나 전기도금 등과 같은 습식 프로세스가 널리 사용되고 있다. 여기서 아연은 철보다 이온화 경향은 크나 대기 환경 중 산소와 물과 반응하여 Zn(OH)2와 같은 화합물을 형성함으로써 철강재 표면상 부식인자를 차단(Barrier)함은 물론 사용 중 철 모재가 노출되는 결함이 발생하는 경우에는 철을 대신하여 희생양극(Sacrificial Anode) 역할을 하기 때문에 철의 부식방식용 금속으로 가장 많이 사용되고 있다. 한편 최근에는 철강의 사용 환경이 다양해짐은 물론 가혹해지고 있어서 이에 따른 내식성 향상이 계속해서 요구되고 있는 추세이다. 따라서 본 연구에서는 철강재의 내식성을 향상시키기 위한 일환으로 현재 많이 사용되고 있는 용융아연도금 강판 상에 아연보다 활성이 높은 마그네슘(Mg)을 건식 프로세스 방법 중에 하나인 PVD(Physical Vapour Deposition)법에 의해 코팅하는 것을 시도하였다. 일반적으로 PVD법에 의해 진공증착하는 경우에는 그 도입가스로써 불활성가스인 아르곤(Ar)을 사용하는 경우가 대부분이나 여기서는 상대적으로 비활성이면서 그 크기가 작은 질소(N2)가스를 도입하여 그 증착 막의 몰포로지는 물론 결정구조도 제어하여 그 내식특성을 향상시키고자 하였다. 본 연구에서는 철강재의 내식성을 향상시키기 위한 방법으로 마그네슘(Mg)를 PVD(Physical Vapor Deposition)법 중 진공증착법(Vacuum Deposition)을 사용하여 용융아연도금 강판 상에 마그네슘 증착 막을 형성하였다. 즉, 여기서는 진공증착 중 질소(Nitrogen, N2)가스를 도입하여 진공챔버(Vacuum Chamber)내의 진공도를 $1{\times}10^{-1}$, $1{\times}10^{-2}$, $1{\times}10^{-3}$, $1{\times}10^{-4}$로 조절하며 제작하였다. 또한 제작된 시편에 대해서는 SEM(Scanning Electron Microscope) 및 XRD(X-Ray Diffraction)을 사용하여 형성된 아연도금상 마그네슘 막의 표면 몰포로지 및 결정구조의 변화를 분석함은 물론 침지시험, 염수분무시험, 분극시험을 통해 이 막들에 대한 내식특성을 분석 평가하였다. 상기 실험결과에 의하면, 진공 가스압이 증가됨에 따라 마그네슘 막의 두께는 감소하였으며, 그 몰포로지의 단면은 주상정(Columnar)에서 입상정(Granular) 구조로 변화하며 표면의 결정립은 점점 미세화 되는 경향을 나타냈다. 이때의 표면의 결정배향성(Crystal orientation)은 표면에너지가 상대적으로 큰 면이 우세하게 나타나는 경향이 있었다. 또한 본 실험에서 형성한 진공증착 막은 비교재인 용융아연도금강판보다 우수한 내식성을 나타냈고, 본 형성 막 중에는 마그네슘 막 두께가 작음에도 불구하고 질소 가스압이 가장 큰 조건일수록 내식성이 우수한 경향을 나타냈다. 이상의 결과는 철강재의 내식성 향상을 위한 응용표면처리설계에 기초적인 지침을 제공할 수 있을 것으로 기대된다.

• Journal of Animal Environmental Science
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• v.16 no.3
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• pp.175-180
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• 2010

Many greenhouse gases occur naturally, such as water vapor, carbon dioxide, methane, nitrous oxide, and ozone. Others such as hydrofluorocarbons (HFCs), perfluorocarbons (PFCs), and sulfur hexafluoride ($SF_6$) result exclusively from human industrial processes. Current global warming has been linked to anthropogenic greenhouse gas concentration increases. Methods to quantify greenhouse gas emissions during animal agriculture and the possibility to apply those to circumstance in the world were studied. Various chamber methods with trace gas analyzer (TGA) were used to quantify greenhouse gas emissions from stored manure. Methane fluxes from pails storing liquid swine manure were measured. Methane emissions increased a little with time and mean was 393.2 ${\mu}g\;m^{-2}\;s{-1}$ (standard error : 4 ${\mu}g\;m^{-2}\;s{-1}$).

• Korean Journal of Heritage: History & Science
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• v.42 no.4
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• pp.4-19
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• 2009

Though admitting that, in light of the recent archaeological trend, the excavation on relics of Sam-gama (a sort of kiln steaming the hemp) is increasingly reported, little efforts by far have been made not only to restore its traditional structure design but also to research hardly the change of hemp-steaming technologies in ages. In this regard, this paper shows the exploration of structural method and design as well as operability with regard to Sam-gut, traditional hemp-processing equipment that was recently reconstructed in Jungsun, Kangwon Province. Samgut, generally positioned at the waterside area, is an traditional device for steaming hemp to get bast fibers from the raw material of hemp, principally consisting of HWA-JIP(fire-place) to obtain steams by feeding fire ad Mong-got(boiling chamber) to make the hemp steamed after stacking. More specifically, thick round-logs were piled at the bottom of Hwajip prior to stacking stones around its circumferential area. When the timber positioned below gets burned with high temperature to heat stones existing in the upper side, waters then poured onto it after laying a bundle of grass and soil up to the boiled stones. If so, there generates hot vapor, which is conveyed to Monggot to steam the hemp. Functionally, it is of outstanding importance that Samgut is capable of producing high-temperature water vapors instantaneously under the intensive manpower, thus being constructed achievable for those purposes. The Samgut made by digging the ground is an instant facility that is closed after use. The remains, which were used to generate higher thermal power for steaming hemp, make it hard to excavate the historic traits because there left little vestiges in the soil, which means keen attention must be paid to find out the trace of Smgama relics. Future research stall be focused on collection of broader data regarding Samgut including technological review in extracting bas fibers from the hemp.

• Electrical & Electronic Materials
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• v.12 no.7
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.