• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.25 no.1
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• pp.36-44
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• 2015

Objectives: This study aimed to elucidate the physicochemical properties of silica powder and airborne particles as by-products generated from fabrication processes to reduce unknown risk factors in the semiconductor manufacturing work environment. Materials and Methods: Sampling was conducted at 200 mm and 300 mm semiconductor wafer fabrication facilities. Thirty-two powder and airborne by-product samples, diffusion(10), chemical vapor deposition(10), chemical mechanical polishing(5), clean(5), etch process(2), were collected from inner chamber parts from process and 1st scrubber equipment during maintenance and process operation. The chemical composition, size, shape, and crystal structure of silica by-product particles were determined by using scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy, and x-ray diffractometry. Results: All powder and airborne particle samples were composed of oxygen(O) and silicon(Si), which means silica particle. The by-product particles were nearly spherical $SiO_2$ and the particle size ranged 25 nm to $50{\mu}m$, and most of the particles were usually agglomerated within a particle size range from approximately 25 nm to 500 nm. In addition, the crystal structure of the silica powder particles was found to be an amorphous silica. Conclusions: The silica by-product particles generated from the semiconductor manufacturing processes are amorphous $SiO_2$, which is considered a less toxic form. These results should provide useful information for alternative strategies to improve the work environment and workers' health.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.1 no.1
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• pp.16-28
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• 1991

A study on comparison of standard charcoal tube method, infrared gas analyzer, and detector tube method were conducted. Measurements were performed simultaneously at same sampling points in an air chamber containing benzene, toluene and xylene vapors. Charcoal tube samles were collected at sampling flowrates of 0.05, 0.2, 0.5, and 1.0 1pm. Results are as follows : 1. Coefficients of variation of results with charcoal tube method for bezene, toluene and xylene mixture vapor were 14.34 % in benzene(0.28-11.12 ppm), 9.20 % in toluene (2.68-135.09 ppm) and 10.21 % in xylene (2.56-82.64 ppm), respectively. 2. Results of infrared gas analyzer in mixture air were non-specific on benzene and toluene. Ratio of results of infrared gas analyzer to those of charcoal tube on benzene, toluene and xylene were 696.4 %, 30.3 % and 36.6 %, respectively. 3. Ratio of responses of detector tubes to those of charcoal tube were 49.4 % in benzene, 22.1 % in toluene and 223.9 % in xylene. Xylene detector tube were interfered by toluene greately. 4. Collection efficiencies of charcoal tubes at low concentraton(benzene : 1 ppm, toluene : 10 ppm, xylene : 10 ppm) were stable on various flowrate from 0.05 to 1.0 1pm, but at high concentrations the efficiency decreased at high flowrate above 0.5 1pm. 5. Within the saturation capacity of charcoal, collection effiency decreased at 0.5-1.0 1pm. Smpling feowrates of 0.05-0.20 1pm were appropriate for sampling organic vapors.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.422-448
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• 1996

Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.331-340
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• 2010

3D fluid based numerical modelling is done for a VHF multi hollow cathode array plasma enhanced chemical vapor deposition system. In order to understand the fundamental characteristics of it, Ar plasma is analyzed with a condition of 40 MHz, 100 Vrf and 1 Torr. For hole array of 6 mm diameter and 20 mm inter-hole distance, plasma is well confined within the hole at an electrode gap of 10 mm. The peak plasma density was $5{\times}10^{11}#/cm^3$ at the center of the hole. When the substrate was assumed at ground potential, electron temperature showed a peak at the vicinity of the grounded walls including the substrate and chamber walls. The reaction rate of metastable based two step ionization was 10 times higher than the direct electron impact ionization at this condition. For $H_2$, the spatial localization of discharge is harder to get than Ar due to various pathways of electron impact reactions other than ionization.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.157-163
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• 2004

Dependence of residual compressive stress of diamond-like carbon (DLC) films on relative humidity was investigated. Polymeric, graphitic and diamond-like carbon films were prepared by r.f.-PACVD using methane or benzene with the negative self bias voltage of the substrate ranging from -100 to -800 V. In-situ measurements of the residual stress were carried out in an environment chamber where the relative humidity was varied from 10％ to 90％. In dense DLC film of high residual compressive stress and hardness, we could not observe any change in the residual compressive stress with relative humidity. However, in the cases of graphitic and polymeric DLC films, abrupt change in the residual stress occurred by changing the relative humidity. The quantity of the stress change was inversely proportional to the film thickness, which means that the stress change with humidity is not due to the penetration of the water molecule into the film structure, but due to surface interaction between water molecules and film surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.45-45
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• 2011

알루미늄과 그 합금은 내부식성(corrosion resistance)이 좋고, 밀도가 낮아 높은 연료소비 효율을 필요로 하는 항공기와 자동차 같은 운송수단의 내-외장 소재로 사용되고 있다. 또한 알루미늄의 높은 내부식성을 이용하여 철강소재의 부식을 방지하는 보호막으로도 폭 넓게 사용된다. 물리기상증착(physical vapor deposition)으로 알루미늄을 코팅하면 박막 성장 초기단계에서 핵(nucleus)을 형성하고, 형성된 핵을 중심으로 주상 구조(columnar structure)로 박막이 성장하는 것이 일반적으로 알려진 방식이다. 주상 구조의 알루미늄 박막은 주상정과 주상정 사이에 필연적으로 공극(pore)이 존재하게 되어 부식을 일으키는 물질이 박막으로 침투하게 되고, 부식 물질과 모재가 반응하여 공식(pitting corrosion)이 발생한다. 본 연구에서는 스퍼터링(magnetron sputtering)을 이용하여 치밀한 조직을 갖는 알루미늄 박막을 코팅할 수 있는 공정을 개발하고, 치밀한 알루미늄 조직이 내부식성에 어떠한 영향을 미치는지 평가하였다. 기판은 냉연강판(cold rolled steel sheet)이 사용되었으며, 알루미늄 타겟의 순도는 99.999%, 크기는 직경 4"이었다. 냉연강판은 진공용기(vacuum chamber)에 장착하기 전에 계면활성제를 이용하여 표면에 존재하는 기름성분을 제거하였으며, 진공용기에 장착한 후에는 아르곤 가스를 이용하여 발생시킨 글로우 방전으로 표면에 존재하는 산화물을 제거하였다. 알루미늄 박막의 조직에 영향을 미치는 공정변수를 확인하기 위해서 스퍼터링 파워, 공정 온도, 공정 압력, 외부 자기장 세기 등의 공정 조건을 변화시켜 코팅을 실시하였다. 실험을 통해서 얻어진 최적 조건으로 알루미늄을 코팅할 경우, 알루미늄 bulk의 밀도와 비교하여 약 94.7%의 밀도를 갖는 알루미늄 박막을 코팅할 수 있었다. 알루미늄 박막이 약 3 ${\mu}$m의 두께로 코팅된 냉연강판의 내부식성 평가(salt spray test, 5% NaCl) 결과, 평가를 시작한 후 72시간 후에도 적청이 발생하지 않았다.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.131-136
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• 2011

A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

• Asian Journal of Turfgrass Science
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• v.10 no.3
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• pp.263-270
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• 1996

This experiment was conducted to investigate the loss of various herbicides by means of vola-tility from the turfgrass field and the hare ground with the different soil moisture contents and temperatures. Different herbicides were applied at the rates of 375 g a.i. /l0a of pendimethalin,250 g a.i. /l0a of napropamide, and 96.4 g a.i. /l0a of dicamba with 200 \ulcorner/10a of spray volume in the turfgrass(Zoysia japonica cut off 5cm) grown in pots(265.8 $cm^2$) and bared soil. The pots were placed in the growth chamber with 10,000 lux of light intensity(12h per day) at 25 and 35˚C for 7days. Amberlite XAD polymeric resin(20/50 mesh) was used as sampling media for herbicide airborne residues. Air flow was maintained at 10 \ulcorner /min by vacuum pump regulated with a factory calibrated flow meter. Herbicide airborne residues were extracted from the XAD resin with 300 ml of 1:1 acetone and hexane. The extracts were concentrated by rotary evaporation at 35˚C and dissolved in 1 ml MeCN for HPLC analysis. The airborne losses of the herbicide applied in the turfgrass and bare soil increased as the temperature and soil moisture contents were increased, regardless of the kinds of herbicide. Higher airborne residues was observed in the turfgrass pots than the bare soil pots. Pendimethalin and dicamba with higher vapor pressure gave rise to the increased loss of airborne herbicides, showing that 6.26 and 6.4% of average airborne loss in pendimethalin and dicamba, respectively, compared to 0.56% in napropamide. The amount of airborne losses in turfgrass was highest at one day after application and then a declined trend was observed as the time was prolonged. Key words. Herbicides, Turfgrass field, Bare ground, Volatility.