• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.377-383
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• 2009

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire substrate by using radio-frequency magnetron sputtering and were performed in the temperature range of $600-900^{\circ}C$ by rapid thermal annealing (RTA). The crystallographic structure and the surface morphology were investigated by using X-ray diffraction and scanning electron microscopy, respectively. The crystallinity of the films was improved with increasing the annealing temperature and the average size of crystalline grains was found to be 50 nm. All the thin films showed an average transmittance of 92% in the wavelength range of 400-1100 nm. As the annealing temperature was increased, the bandgap energy was decreased and the violet photoluminescence (PL) signal at 400 nm replaced the ultraviolet PL signal. The electrical properties of the thin films showed a significant dependence on the annealing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.345-345
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• 2011

MgO는 암염구조를 가진 전형적인 이온 결합성 화합물로서 7.8eV의 띠틈을 갖고 흡습성이 강하다. 면 방전 구조 PDP에서 MgO 보호막은 면 방전으로 인한 유전층의 식각을 보호하고 2차 전자 방출을 통해 방전 전압을 낮추는 역할을 한다. 하지만 MgO 보호막은 증착시 흡수된 수분이 제거되어야 하고, 방전 특성 개선 및 방전 효율 향상을 위해 가공 처리에 관한 연구가 진행 되어야 한다. 본 연구는 MgO 보호막의 전자적 특성의 변화를 알아보기 위해 $O_2$ 분위기에서 전자빔 증착법을 이용해 MgO Powder를 사용하여 시료를 제작하였다. 표면에 흡착된 수분제거로 인한 특성 변화를 알아보기 위해 진공 챔버내에서 시료를 $500^{\circ}C{\sim}550^{\circ}C$의 열처리를 실시한 후 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UPS(Ultraviolet photoelectron Spectroscopy)를 이용하여 전자적 특성을 연구하였다. XPS 측정결과 시료의 열처리를 통해 C1s spectrum의 O-C=O(289eV) binding energy가 없어져 박막에 흡착된 불순물이 제거 되었으며 O1s spectrum에서 Hydroxides가 감소하고 530.0eV의 MgO 결합에너지쪽으로 커짐으로써 박막의 구조를 확인할 수 있었다. 그리고 $O^2$ 분위기에서 성장시킨 MgO 박막 기판을 열처리 후 REELS를 이용해 띠틈을 얻어보면 Ep=500eV에서 띠틈이 6.77eV, Ep=1500eV에서 띠틈이 7.33eV로 각각 측정되었다. Ep=500eV의 REELS 스펙트럼으로부터 산소 결함에 의한 표면 F Center는 4.22eV로 확인되었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.332-332
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• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.461-461
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• 2013

Over the last decade, zinc oxide (ZnO) thin films have attracted considerable attention owing to large band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-3]. Recent interest in ZnO related researches has been switched into the fabrication and characterization of low-dimensional nanostructures, such as nano-wires and nano-dots that can be applicable to manufacture the optoelectronic devices such as ultraviolet lasers, light-emitting-diodes and detectors. Since the optical properties of ZnO nano-structures might be distinct from those of bulk materials or thin films, the low-dimensional phenomena should be examined further. In order to utilize such advanced optoelectronic devices, one of the challenges is how to control the surface state related emissions that are drastically increased with increasing the density of the nano-structures and the surface-to-volume ratio. This paper reports the synthesis and characterization of self-assembled ZnO hexagonal nano-disks grown by radio-frequency magnetron sputtering. X-ray diffraction data and scanning electron microscopy data showed that ZnO hexagonal nano-disks were nucleated on top of the flat surfaces as the film thickness reached to 1.56 ${\mu}m$ and then the number of nano-disks increased with increasing the film thickness. The lateral size of hexagonal nano-disks was ~720 nm and height was ~74 nm. The strong photo luminescence spectra obtained at 10 K was also observed, which was assigned to a surface exciton emission at 3.3628 eV arising from the surface sites of hexagonal nano-disks.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.380-380
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• 2010

Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.5
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• pp.375-382
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• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.224-229
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• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.