• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.46-48
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• 2003

The modification of metal surface by ion implantation with MEVVA ion implanter and thin film deposition with filtered vacuum arc plasma device is introduced in this paper. The combination of ion implantation and thin film deposition is proved as a better method to improve properties of metal surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.18-22
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• 2007

Carbon nanofilaments were deposited on silicon oxide substrate by thermal chemical vapor deposition method. We used $Fe(CO)_5$ as the catalyst for the carbon nanofilaments formation. Around $800^{\circ}C$ substrate temperature, the formation density of carbon nanofilaments could be enhanced by the vacuum sublimation technique of $Fe(CO)_5$, compared with the conventional spin coating technique. Finally, we could achieve the low temperature, as low as $350^{\circ}C$, formation of carbon nanofilaments using the sublimated Fe-complex nanograins with thermal chemical vapor deposition. Detailed morphologies and characteristics of the carbon nanofilaments were investigated. Based on these results, the role of the vacuum sublimation technique for the low temperature deposition of carbon nanofilaments was discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.02a
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• pp.50-50
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• 2005

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.22-29
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• 2002

The process of energetic deposition has been simulated by using molecular dynamics (W) simulation and kinetic Monte Carlo (KMC) simulation. The atomistic mechanisms of film growth in energetic deposition are discussed.

• Analytical Science and Technology
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• v.33 no.6
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• pp.240-244
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• 2020

A grip impression is evidence of contact between the assailant and victim in a case. The shape of the grip impression can be analyzed to reconstruct which part of the palm it contacted. This study explored whether the grip impression left on cotton, nylon, and polyester fabrics can be identified by vacuum metal deposition (VMD). The latent grip impression developed by VMD had limitations in personal identification, but a new possibility was found that could be used as evidence for crime-scene reconstruction.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.45-56
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• 2003

A high flux metal plasma pulse ion source, which can simultaneously perform ion implantation and deposition, was developed and tested to evaluate its performance using the prototype. Flux of ion source was measured to be 5 A and bi-polar pulse power supply with a peak voltage of 250 V, repetition of 20 Hz and width of 100 ${\mu}\textrm{s}$ has an output current of 2 kA and average power of 2 kW. Trigger power supply is a high voltage pulse generator producing a peak voltage of 12 kV, peak current of 50 A and repetition rate of 20 Hz. The acceleration column for providing target energy up to ion implantation is carefully designed and compatible with UHV (ultra high vacuum) application. Prototype systems including various ion sources are fabricated for the performance test in the vacuum and evaluated to be more competitive than the existing equipments through repeated deposition experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.107-107
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.186-186
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.151-151
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• 2002

• Particle and aerosol research
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• v.14 no.2
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• pp.41-47
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• 2018

Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of $2{\sim}10^4nm$. The present numerical results showed good agreement with the available experimental ones.