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A Numerical Study on Particle Deposition onto a Heated Semiconductor Wafer in Vacuum Environment

진공 환경에서 가열되는 반도체 웨이퍼로의 입자 침착에 관한 수치해석적 연구

  • 박수빈 (한국생산기술연구원 나노오염제어연구실) ;
  • 유경훈 (한국생산기술연구원 나노오염제어연구실) ;
  • 이건형 (삼성디스플레이 FT기술그룹)
  • Received : 2018.06.22
  • Accepted : 2018.06.29
  • Published : 2018.06.30

Abstract

Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of $2{\sim}10^4nm$. The present numerical results showed good agreement with the available experimental ones.

Keywords

References

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