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http://dx.doi.org/10.11629/jpaar.2018.14.2.041

A Numerical Study on Particle Deposition onto a Heated Semiconductor Wafer in Vacuum Environment  

Park, Su-Bin (Korea Institute of Industrial Technology (KITECH))
Yoo, Kyung-Hoon (Korea Institute of Industrial Technology (KITECH))
Lee, Kun-Hyung (Facility Technology Group, SAMSUNG DISPLAY)
Publication Information
Particle and aerosol research / v.14, no.2, 2018 , pp. 41-47 More about this Journal
Abstract
Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of $2{\sim}10^4nm$. The present numerical results showed good agreement with the available experimental ones.
Keywords
Vacuum Environment; Horizontal Semiconductor Wafer; Ideal Gas; Thermophoresis; Particle Deposition velocity;
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