• 자원리싸이클링
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• 제26권6호
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• pp.3-9
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• 2017

본 연구에서는 anode로 Kroll 공정 처리된 Ti 스폰지를 사용하여 아크 전류, 아크 전압, 플라즈마 가스 종류에 따른 플라즈마 아크 재용해 거동을 조사하였다. 진공펌프의 토출 압력 범위($200{\sim}300kgf/cm^2$)에서는 토출 압력 증가에 따라 주어진 아크 길이에서 아크 전압이 크게 달라지지 않았다. 이것은 작업하는 동안 진공챔버내 압력이 거의 변화하지 않고, 주어진 분위기 압력을 잘 유지함을 의미한다. 여러가지 아크 전류 조건(700~900A)에서, 아크 전류 증가에 따라 아크 전압이 약간 증가하였고, anode 재료변화에 대한 효과도 이전 연구결과와 비교하였다. 분위기 가스가 Ar에서 He으로 변경되는 경우에는 정상상태의 출력이 2배 정도 향상되는 효과가 관찰되었다. 플라즈마 아크 장치의 출력 증가는 Ti 스폰지의 재용해 속도 증가와 함께 잉곳 표면도 양호해졌다. New 스크랩인 타이타늄과 old 스크랩인 지르코늄 합금을 플라즈마 아크 재용해한 결과, 매우 양호한 표면을 갖는 잉곳을 제조할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.162.1-162.1
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• 2015

The use of plasma has increased in bio-application field in recent years. Particularly, water treated by arc discharge or atmospheric pressure plasma has been actively utilized in bio-industry. In this study, we have developed a plasma activated water generating system. For this system, two kinds of plasma sources; dielectric barrier discharge (DBD) plasma and arc discharge plasma have been used. The discharge energy was calculated using the breakdown voltage and current, and the emission spectrum was measured to investigate the generated reactive species. We also analyzed the amount of reactive oxygen and nitrogen species in water using the chemical methods and nitric oxide sensor. Finally, the influence of plasma generated reactive species on the germination and growth of spinach (Spinacia oleracea) was investigated. Spinach is a green leafy vegetable that contains a large amount of various physiologically active organic compounds. However, it is characterized with a low seed germination rate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.247-247
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• 2011

차단기의 주 임무는 사고전류를 차단하는 것이다. 진공 인터럽터는 진공차단기의 차단부로서 진공차단기의 핵심부이다. 사고전류 발생시 전극이 분리되면서 아크가 발생한다. VI의 아크소호 방식에는 크게 축자계 방식과 횡자계 방식이 있는데 본 논문은 횡자계 방식에 관한 것이다. 교류전류에서는 전류가 일시적으로 공급되지 않는 전류영전에서 아크소호가 가능하다. 전류영점에서 아크가 소호된 직후 극간저항은 거의 0에서부터 무한대까지 급격하게 변화하는데 이때 이 저항의 증가에 비례하여 과도회복전압이 발생한다. 하지만 잔류플라즈마의 소멸에는 일정시간이 소요되며 아크가 소호된 이후에도 종종 극간에 금속증기가 존재하게 된다. 잔류플라즈마는 전기전도도를 가지므로 극간에 과도회복전압이 걸리면 전류영점 직후에 아크를 통해 흘러 결국 아크의 재점호를 야기시키는 post arc current를 발생시킬 수 있다. 따라서 전류영점의 충분한 시간 이전에 아크를 확산아크로 전환시켜 극간에 존재하는 잔류 플라즈마 량을 최소화시켜야 한다. VI 내부의 아크거동에 미치는 인자에는 접점재료와 VI 용기내부의 진공도 이외에도 전극의 직경, 쉴드, 전극의 개극속도, 최종 극간거리 등이 있다. 본 연구에서는 나선형 VI 접점을 대상으로 두 접점 사이의 비틀림 각도에 따른 아크제어성능을 비교분석하였다.

• 한국진공학회지
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• 제12권S1호
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• pp.21-27
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• 2003

Micro-arc discharge oxidation (MDO) is a cost-effective plasma electrolytic process which can be used to improve the wear and corrosion resistance of Al-alloy parts by forming a alumina coating on the component surface. However, the MDO coated Al-alloy components often exhibit relatively high friction coefficients and low wear resistance fitted with many counterface materials, additionally, the pitting corrosion for the MDO coated AI-alloy components, especially for a thinner alumina coating, often occurs in atmosphere circumstance due to the porous alumina coats. Therefore, a duplex treatment, combining a MDO coated ahumina thin layer with a TiN coating, prepared by magnetron sputtering (MS), has been investigated. The Vicker's microhardness, pin-on-disc, electrochemical measurement, salt spray, XRD and SEM tests were used to characterize and analyze the treated samples. The work demonstrates that the MDO/MS coated samples have a combination of a very low friction coefficient and good wear resistance as well as corrosion since the micro-holes on alumina coating are partly or fully covered by TiN material.

• 한국입자에어로졸학회지
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• 제9권1호
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• pp.31-36
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• 2013

In this study, Mo metal powder was prepared by hydrogen reduction of Mo trioxides with different purity of 2N and 3N grades. We have obtained Mo metal powder with oxygen content of 1450 ppm by hydrogen reduction and subsequent heat treatment for degassing. Using the Mo metal powder, a low-oxygen Mo ingot was prepared by repetitive vacuum arc melting. The oxygen content of the obtained Mo ingot was less than 70 ppm after vacuum arc melting for 30 min. The purity of the Mo metal powder and the ingot was evaluated using glow discharge mass spectrometry. The purity of the respective Mo ingots was increased to 3N and 4N grades from the Mo powder of 2N and 3N grades after the repetitive vacuum arc melting. The low oxygen Mo ingot thus can be used as a raw material for sputtering targets.

• 한국표면공학회지
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• 제43권2호
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• pp.80-85
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• 2010

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.184-190
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• 2009

One of the purposes of arc control is to change its state to the diffuse state before current zero as soon as possible. This can provide optimal conditions for full extinction of arc by minimizing the quantity of residual plasma between contacts near current zero. TRV(transient recovery voltage) occurs at current zero at the same time with current interruption. If there is substantial residual plasma near current zero it can cause 'post arc current' by the interaction of its conductance with TRV. In this paper, arc control ability as a function of configuration of spiral type VI contacts was compared on the criteria of the time taken for arc to reach to the diffuse state.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.231-233
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• 2001

Axial magnetic field(AMF) type electrodes can be increase the interrupting capability of vacuum interrupters. Depending on the design, the principle of the local axial magnetic field arrangement are different. In this paper, a new AMF contact design based on a unipolar field arrangement and its characteristics are introduced. The influence of the unipolar AMF on the arc behavior is described by high-speed video camera. In addition, three-dimensional AMF simulations have been peformed by means of a finite element analysis(FEM) program to analyze the influence of magnetic field distribution on the AMF performance. The high interrupting capability of the unipolar AMF type electrode has been confirmed by three-phase test.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 E
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• pp.1635-1637
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• 1998

This paper describes on the basic study for the insulation design of vacuum interrupter using Finite Element Method. For the basic study of insulation design, first, the maximum electric field was calculated on each curvature radius of arc shield and electrode. Second, the maximum electric field was also calculated on applied voltage and end shield with or not. Thus, the maximum electric field calculated have an effect on curvature radius and voltage polarity.