Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Surface Modification of WC-Co and SCM415 by the Ion Bombardment Process of Filtered Vacuum Arc Plasma

자장 여과 아크 이온빔 식각 공정을 이용한 WC-Co 및 SCM415 금속 소재 표면 구조 제어 연구

  • 이승훈 (한국기계연구원 부설 재료연구소) ;
  • 윤성환 (한국기계연구원 부설 재료연구소) ;
  • 김도근 (한국기계연구원 부설 재료연구소) ;
  • 권정대 (한국기계연구원 부설 재료연구소) ;
  • 김종국 (한국기계연구원 부설 재료연구소)
  • Received : 2010.04.09
  • Accepted : 2010.04.29
  • Published : 2010.04.30
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Abstract

The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 nm/min at -600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 nm/min at -800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 nm/min to 40 nm/min at -800 V substrate bias voltage and the uniform surface treatment was available.

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