• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
• /
• pp.1096-1098
• /
• 1999

The performance of as plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the optimum preparation conditions of MgO Protecting layer by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage, lower erosion rate as a consequence of ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam eraporation.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.101-102
• /
• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the de bias voltage of -10V showed lower discharge voltage, lower erosion rate by ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam evaporation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권9호
• /
• pp.527-532
• /
• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권7호
• /
• pp.700-705
• /
• 1997

Transparent conducting indium tin oxide (TC-ITO) thin films are deposited on soda lime glass by a dc magnetron sputtering technique having the unbalanced-magnet structure in order to improve the electrical/material characteristics and to avoid the surface damages. The material properties are measured by the x-ray diffractometer (XRD) and atomic force microscope (AFM). The (400) peak as the preferred orientation of <100> direction for ITO thin films is stabilized with the increase of substrate temperature. The surface roughness estimated by AFM 3D image at the substrate temperature of 40$0^{\circ}C$ is extremely uniform. The best resistivity of ITO films (5500 $\AA$ thick) at 40$0^{\circ}C$ is about 1.3$\times$10$^{-4}$ $\Omega$cm on the position of 4 cm from substrate center.

• 한국전기전자재료학회논문지
• /
• 제20권8호
• /
• pp.701-705
• /
• 2007

The incorporation of N in a-C film is able to improve the friction coefficient and the adhesion to various substrates. In this study, a-C:N films were deposited on Si and steel substrates by closed-field unbalanced magnetron (CFUBM) sputtering system in $Ar/N_2$ plasma. The lubricant characteristics was investigated for a-C:N deposited with total working pressure from 4 to 7 mTorr. We obtained high hardness up to 24GPa, friction coefficient lower than 0.1 and the smooth surface of having the extremely low roughness (0.16 nm). The physcial properties of a-C:N thin film are related to the increase of cross-linked $sp^2$ bonding clusters in the film. However, the decrease of hardness, elastic modulus and the increase of surface roughness, friction coefficient with the increase of $N_2$ partial pressrue might be due to the effect of energetic ions as a result of the increase of ion bombardment with the increase of ion density in the plasma.

• 한국전기전자재료학회논문지
• /
• 제31권1호
• /
• pp.40-43
• /
• 2018

Various Ni-doped carbon (C : Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C : Ni films were investigated. The UBM C : Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C : Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2012년도 춘계학술발표회 논문집
• /
• pp.173-173
• /
• 2012

본 연구는 segment target을 장착한 unbalanced magnetron sputtering을 활용하여 CrZr-Al-N 박막을 합성하고 박막의 고온안정성과 미세구조를 연구하는데 그 목적이 있다. 박막의 Al 함량을 조절하기 위하여 각 segment target은 Cr,Zr을 일정vol% 유지하며 Al vol%만 변화하여 설계하였다. 박막의 고온안정성을 실험하기 위해 각 시편은 $100{\sim}500^{\circ}C$ 사이의 온도에서 1시간씩 annealing 처리를 실시한 후에 경도를 측정하였다. 박막의 미세구조 단면을 위해 FE-SEM을 이용하였으며 이밖에 박막의 조성, 경도 및 결정구조를 측정하기 위해 EDS, microhardness testing system, XRD를 사용하였다. Al 부피비를 변화시킨 Segment target을 활용한 박막합성에서 박막의 Al함량은 각각 1/11에서 4.6at.%, 1/5에서 8.1at.%, 1/3에서 12.9at.% 로 나타났으며, 박막의 경도는 4.6~12.9at.% 사이의 Al 함량을 갖는 박막에 대해 모두 유사한 값을 가졌으며 31GPa로 측정되었다. 박막의 단면 구조 역시 4.6~12.9at.% 사이의 Al 함량을 갖는 박막에 대해 모두 columnar 구조가 관찰되었다.

• 한국전기전자재료학회논문지
• /
• 제32권2호
• /
• pp.129-133
• /
• 2019

TiN thin films were fabricated using an unbalanced magnetron sputtering (UBMS) system, and their structure and surface characteristics as well as their optical and tribological properties were evaluated. The hardness, elastic modulus, adhesive force, surface roughness, and transmittance of the Ti thin films fabricated using the UBMS system were 11.5 GPa, 103 GPa, 27.5 N, 2.45 nm and 20%, respectively. The TiN films prepared with various proportions of nitrogen as the reaction gas exhibited maximum values for the hardness, elastic modulus, critical load, RMS roughness and transmittance of approximately 19.2 GPa, 182 GPa, 27.3 N, 0.98 nm, and 85%, respectively. Moreover, the TiN thin film fabricated under the condition of 30 sccm nitrogen gas showed the optimal physical properties. In summary, the TiN thin films fabricated using the UBMS system exhibited excellent hardness, elastic modulus, adhesion, and smooth surface in addition to good hydrophilic properties.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 E
• /
• pp.2236-2238
• /
• 1999

This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.193-193
• /
• 2010

HIPIMS(High sputtering impulse magnetron sputtering)은 수십 ${\mu}s$의 짧은 pulse 동안 수kw의 매우 높은 파워를 인가할 수 있어 밀도 $10^{13}/cm^3$ 이상의 고밀도 플라즈마 방전이 가능하여 스퍼터된 타겟 이온들의 이온화율이 매우 높은 특징을 가진다. HIPIMS를 통해 증착한 박막의 경우 매우 치밀한 조직을 가지고 있어 기존 DC, Pulsed DC, RF 증착을 통한 박막에 비해 우수한 물성을 보여준다. 본 실험에서는 대면적의 고품위 Al:ZnO 박막을 증착하기위하여 HIPIMS 증착법을 사용하였다. 1000mm폭 타겟상에서 균일한 증착을 위하여 Balanced B-field, Unbalanced field를 각각 인가하여 실험하였다. 시뮬레이션을 통하여 타겟 중심부와 가장자리의 자기장을 결정하였으며, target edge에서의 증착율과 cathode erosion 방지를 위하여 원형 트랙형으로 보조 자석을 설치하였다. $Al_2O_3$(2wt%)가 첨가된 planar target을 사용하였고, power는 700 W~2 kW, 그리고 pulse 폭은 $50-150 {\mu}s$정도로 변화시켜 가면서 상온에서 증착하였다. 플라즈마 가스로는 Ar만을 사용하여 두께는 60-100 nm정도로 증착하였다. Plasma emission monitoring을 통해 측정한 결과 Balanced B-field 에 비해 Unbalanced B-field 조건 에서 스퍼터된 이온들의 균일도가 우수하였으며 증착된 박막의 균일도 또한 증가하였다.