• Title/Summary/Keyword: ultraviolet ray

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UV-induced Mutagenesis of Nannochloropsis oculata for the Increase of Lipid Accumulation and its Characterization (자외선 조사에 의한 Nannochloropsis oculata의 지질 축적량 향상 변이주 생성 및 특성 분석)

  • Kim, Jong-Hun;Park, Hyun-Jin;Kim, Young-Hwa;Joo, Hyun;Lee, Sang-Hoon;Lee, Jae-Hwa
    • Applied Chemistry for Engineering
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    • v.24 no.2
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    • pp.155-160
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    • 2013
  • Research on mutant generation and isolation for microalgae yielding enhanced lipid accumulation is an important issue for the production of economic biodiesel. In the present study, ultraviolet (UV-B type) ray induced mutant generation was tried using a photosynthetic microalgae, Nannochloropsis oculata (N. oculata), for the production of biodiesel. The resulting colonies were isolated and further cultured with both liquid and solid state f/2 media. After a few week cultivation, changes of cell growth rate, dry cell weight, and several important intracellular components (chlorophyll, carotenoid, and lipid) were investigated. Two mutants among thousands colonies showed an increased cell growth and high lipid accumulation as compared to those of wild type. It was also observed that the increased cell growth rate is associated with the overexpressed intracellular proteins. However, the mutants showed a decrease in the chlorophyll biosynthesis.

Synthesis and Photoluminescence Properties of Red Phosphors Gd1-xAl3(BO3)4:Eux3+ (적색 형광체 Gd1-xAl3(BO3)4:Eux3+의 합성과 발광 특성)

  • Cho, Shin-Ho;Cho, Seon-Woog
    • Korean Journal of Materials Research
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    • v.22 no.3
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    • pp.145-149
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    • 2012
  • Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

Improvement in Light Extraction Efficiency of 380 nm UV-LED Using Nano-patterned n-type Gan Substrate (나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선)

  • Baek, Kwang-Sun;Jo, Min-Sung;Lee, Young-Gon;Sadasivam, Karthikeyan Giri;Song, Young-Ho;Kim, Seung-Hwan;Kim, Jae-Kwan;Jeon, Seong-Ran;Lee, June-Key
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.273-276
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    • 2011
  • Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

Effect of Tunicamycin on the Cell Growth and ${\alpha}-Amylase$ Production of Bacillus amyloliquefaciens K (Bacillus amyloliquefaciens k의 생육(生育)과 ${\alpha}-Amylase$ 생산(生産)에 대한 Tunicamycin의 영향(影響))

  • Kim, Ki-Cheul;Yamaski, Makari;Takatsuki, Akira;Tamura, Gakuzo
    • Applied Biological Chemistry
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    • v.24 no.4
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    • pp.252-259
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    • 1981
  • The effects of tunicamycin (TM) on the growth and ${\alpha}-amylase$ productivity of B. amyloliquefaciens K were studied. The minimal growth inhibitory concentration was $0.25{\mu}\textrm{g}/m\ell$ and its ${\alpha}-amylase$ was stable up to $50^{\circ}C$. When the saking culture with $1{\mu}\textrm{g}/m\ell$ of Tunicamycin caused the change of cell shape from form rod to irregular circular form and the mycelium lysis. the grow th of His-, $TM^{\tau}$ mutant obtained by treatment of TM and ultraviolet ray was similar to that of the parent strain, but the productivity of ${\alpha}-amylase$, protease, and RNase was lower than that of the parent.

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Effects of B Doping on Structural, Optical, and Electrical Properties of ZnO Nanorods Grown by Hydrothermal Method

  • Kim, Soaram;Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Kim, Byunggu;Kim, Jin Soo;Kim, Jong Su;Leem, Jae-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.337-337
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    • 2013
  • ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

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Basic Characteristics and Application of Modern Dancheong Pigment Jangdanyuksaek (Incarnadine) (현대 단청용 장단육색의 기본 특성 및 사용 기준 연구)

  • Kim, Eun Ji;Chung, Kwang Yong
    • Journal of Conservation Science
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    • v.31 no.4
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    • pp.457-476
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    • 2015
  • This study is expected to present instructions and analysis of Modern Dancheong pigments by its physical characteristics. Search pigments currently used and experiments proper mixing ratio of Jangdanyuksaek(Incarnadine). Samples are made by based on presented a mixture ratio which is less exfoliation, cracks and color change. And put into accelerated weathering test and ultraviolet ray degradation test. As a result in case of Jidang($TiO_2$) Rutile type is superior in discoloration and durability. Rutile type makes color difference remarkably because of oil absorption difference while mixing with Jangdan. Water paints which are used as a alternative present yellowness which means water paints lack in durability. whiting should be taken carefully as it has high brightness after degradation.

Preparation and Coating of Artificial Pearl using Inorganic Pigment (무기안료를 이용한 인공진주 코팅 및 제조)

  • Shin, Cheol-Woo;Hyun, Mi-Ho;Lee, Dong-Kyu
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.3
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    • pp.528-535
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    • 2015
  • Humanity has tended pursuing beauty. Pearls has been loved by many people for thousands of years as a symbol of wealth and status. Today, Artificial pearl were made using organic pigment due to bright colors and easy coating process. But the new coating technique is required due to low durability, weather resistance and difficulty of luxurious luster expression. This study, nitrocellulose and urethane were used as binder and inorganic pigment were used to expression of colors. Experimental variable of artificial pearl with nitrocellulose and solvent ratio, urethane and curing agent ratio, the amount of pearl number of coating, drying temperature and time, and coating technology was developed. The coated artificial pearl was evaluated with color-difference meter, ultraviolet ray resistance, promotion weathering. Urethane was better than nitrocellulose when compared with weather resistance, acid-alkalinity resistance.

High-quality ZnO nanowire arrays directly synthesized from Zn vapor deposition without catalyst

  • Khai, Tran Van;Prachuporn, Maneeratanasarn;Choi, Bong-Geun;Kim, Hyoun-Woo;So, Dae-Sup;Lee, Joon-Woo;Park, No-Hyung;Huh, Hoon;Tung, Ngo Trinh;Ham, Heon;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.4
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    • pp.137-146
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    • 2011
  • Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application

  • Sim, Hana;Lee, Jeongmin;Cho, Seongjae;Cho, Eou-Sik;Kwon, Sang Jik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.267-275
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    • 2015
  • In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

Preparation of ZnO Thin Films with UV Emission by Spin Coating and Low-temperature Heat-treatment (스핀코팅 및 저온열처리에 의한 자외선 발광특성을 갖는 산화아연 박막의 제조)

  • Kang, Bo-An;Jeong, Ju-Hyun
    • Journal of Korean Ophthalmic Optics Society
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    • v.13 no.3
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    • pp.73-77
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    • 2008
  • Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.

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