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http://dx.doi.org/10.6111/JKCGCT.2011.21.4.137

High-quality ZnO nanowire arrays directly synthesized from Zn vapor deposition without catalyst  

Khai, Tran Van (Division of Advanced Materials Science Engineering, Hanyang University)
Prachuporn, Maneeratanasarn (Division of Advanced Materials Science Engineering, Hanyang University)
Choi, Bong-Geun (Division of Advanced Materials Science Engineering, Hanyang University)
Kim, Hyoun-Woo (Division of Advanced Materials Science Engineering, Hanyang University)
So, Dae-Sup (National Nanotechnology Policy Center, Korea Institute of Science and Technology Information)
Lee, Joon-Woo (National Nanotechnology Policy Center, Korea Institute of Science and Technology Information)
Park, No-Hyung (Korea Institute of Industrial Technology)
Huh, Hoon (Korea Institute of Industrial Technology)
Tung, Ngo Trinh (Institute of Chemistry, Vietnam Academy of Science and Technology (VAST))
Ham, Heon (Division of Advanced Materials Science Engineering, Hanyang University)
Shim, Kwang-Bo (Division of Advanced Materials Science Engineering, Hanyang University)
Abstract
Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).
Keywords
ZnO nanostructures; Nanowire; GaN; ZnO photoluminescence;
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