• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.267-268
• /
• 2008

This paper presents compact low frequency ultra-wide band(UWB) sensor design and studying of the partial discharge diagnosis by sensing electromagnetic pulse emitted from the partial discharge source with new designed UWB sensor. In this study, we designed new type of compact low frequency UWB sensor based on microstrip antenna technology to detect both low frequency and high frequency band of partial discharge signal. And experiments of offline PD testing on in medium voltage (22.9kV) underground cable and mention the comparative results with the traditional HFCT as a reference sensor in the laboratory. In the series of comparative test, the calibration signal injection test provided with conventional IEC 60270 method and high voltage injection testing are included.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1996.11b
• /
• pp.669-674
• /
• 1996

The theory of quantum mechanics states that for any system there are a set of discrete physical states, quantum states, which corresponds a particular energy level of the system. The lowest energy the system can have, corresponding to its ground state, is not necessarily zero, but depends only on the precise microscopic nature of the system under consideration. At the absolute zero of temperature all systems will be in their lowest energy state (zero point energy) and as the system is warmed from OK, the higher energy states become occupied. The probability of occupancy of the excited states relative to that of the ground state is proportional to the absolute temperature. Therefore we can obtain nuclear dipole and quadrupole moment very accurately at ultra low temperature (<15mk) by NMR and from the destruction of anisotropy. The former is called LTNO/NMR and the latter is called LTNO (Low Temperature Nuclear Orientation). In this paper we discuss and introduce only an experimental apparatus with results of cooling power test, a helium dilution refrigerator, which can reache 8mK, and an actual technique for the experiment, a theory and results will be presented in another papers.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.1
• /
• pp.98-106
• /
• 2009

This work proposes a 1280-RGB $\times$ 800-Dot 70.78mW 0.l3um CMOS LCD driver IC (LDI) for high-performance 16M-color low temperature poly silicon (LTPS) thin film transistor liquid crystal display (TFT-LCD) systems such as ultra mobile PC (UMPC) and mobile applications simultaneously requiring high resolution, low power, and small size at high speed. The proposed LDI optimizes power consumption and chip area at high resolution based on a resistor-string based architecture. The single column driver employing a 1:12 MUX architecture drives 12 channels simultaneously to minimize chip area. The implemented class-AB amplifier achieves a rail-to-rail operation with high gain and low power while minimizing the effect of offset and output deviations for high definition. The supply- and temperature-insensitive current reference is implemented on chip with a small number of MOS transistors. A slew enhancement technique applicable to next-generation source drivers, not implemented on this prototype chip, is proposed to reduce power consumption further. The prototype LDI implemented in a 0.13um CMOS technology demonstrates a measured settling time of source driver amplifiers within 1.016us and 1.072us during high-to-low and low-to-high transitions, respectively. The output voltage of source drivers shows a maximum deviation of 11mV. The LDI with an active die area of $12,203um{\times}1500um$ consumes 70.78mW at 1.5V/5.5V.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.11B
• /
• pp.792-803
• /
• 2005

Ultra wide band (UWB) technology will be applied in the high rare wireless personal area networks (WPANs) for its high rate, low power, and innate immunity to multipath fading. In this paper, a power aware multi-hop packet relay MAC protocol in UWB based WPANs is proposed and a power aware path status factor (PAPSF), which is derived from SINR and power resource condition of each device, is used to select a suitable relay node. Compared with relaying by piconet coordinator (PNC), which is easily chosen by other ad hoc routing protocol, the new scheme can achieve hi임or throughput, decrease the time required for transmitting high power signal and we can easily distribute the battery power consumption from PNC to other devices in the piconet to prevent the PNC device using up its battery too fast and finally avoid PNC handover too frequently.

• KEPCO Journal on Electric Power and Energy
• /
• v.8 no.2
• /
• pp.103-110
• /
• 2022

Ultrafine Particle number and size distributions were simultaneously measured at rural area around the power plant in Dangjin, South Korea. New Particle formation and growth events were frequently observed during January, 2021 and classified based on their strength and persistence as well as the variation in geometric mean diameter(GMD) on January 12, 21 and 17. In this study, we investigated mechanisms of new particle growth based on measurements using a high resolution time of flight aerosol mass spectrometer(HR-ToF-AMS) and a scanning mobility particle sizer(SMPS). On Event days(Jan 12 and 21), the total average growth rate was found to be 8.46 nm/h~24.76 nm/hr. These growth rate are comparable to those reported for other urban and rural sites in South Korea using different method. Comparing to the Non-Event day(Jan 17), New Particle Growth mostly occurred when solar radiation is peaked and relative humidity is low in daytime, moreover enhanced under the condition of higher precusors, NO₂ (39.9 vs 6.2ppb), VOCs(129.5 vs 84.6ppb), NH₃(11 vs 4.7ppb). The HR-ToF-AMS PM_1.0 composition shows Organic and Ammoniated nitrate were dominant species effected by emission source in domestic. On the other hand, The Fraction of Ammoniated sulfate was calculated to be approximately 16% and 31% when air quality is inflow from China. Longer term studies are needed to help resolve the relative contributions of each precusor species on new particle growth characteristics.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.5
• /
• pp.1-9
• /
• 2016

Railroad bridges account for 25% of the entire high-speed rail network. Railway bridges are subject to gradual structural degradation or fatigue accumulation due to consistent and repeating excitation by fast moving trains. Wireless sensing technology has opened up a new avenue for bridge health monitoring owing to its low-cost, high fidelity, and multiple sensing capability. On the other hand, measuring the transient response during train passage is quite challenging that the current wireless sensor system cannot be applied due to the intrinsic time delay of the sensor network. Therefore, this paper presents a framework for monitoring such transient responses with wireless sensing systems using 1) real-time excessive vibration monitoring through ultra-low-power MEMS accelerometers, and 2) post-event time synchronization scheme. The ultra-low power accelerometer continuously monitors the vibration and trigger network when excessive vibrations are detected. The entire network of wireless smart sensors starts sensing through triggering and the post-event time synchronization is conducted to compensate for the time error on the measured responses. The results of this study highlight the potential of detecting the impact load and triggering the entire network, as well as the effectiveness of the post-event time synchronized scheme for compensating for the time error. A numerical and experimental study was carried out to validate the proposed sensing hardware and time synchronization method.

• Journal of Multimedia Information System
• /
• v.9 no.2
• /
• pp.145-154
• /
• 2022

The authors are making a prototype flexible board of a radio-frequency transmitter for measuring an electromyogram (EMG) of a flying moth and plan to apply for an experimental station license from the Ministry of Internal Affairs and Communications of Japan in the summer of 2022. The goal is to create a continuous low-dose exposure standard that incorporates scientific and physiological functional assessments to replace the current standard based on lethal dose 50. This paper describes the technical evaluation of the hardware. The signal of a bipolar EMG electrode is amplified by an operational amplifier. This potential is added to a voltage-controlled crystal oscillator (27 MHz, bandwidth: 4 kHz), frequency-converted, and transmitted from an antenna about 10 cm long (diameter: 0.03 mm). The power source is a 1.55-V wristwatch battery that has a total weight of about 0.3 g (one dry battery and analog circuit) and an expected operating time of 20 minutes. The output power is -7 dBm and the effective isotropic radiated power is -40 dBm. The signal is received by a dual-whip antenna (2.15 dBi) at a distance of about 100 m from the moth. The link margin of the communication circuit is above 30 dB within 100 m. The concepts of this hardware and the measurement data are presented in this paper. This will be the first biological data transmission from a moth with an official license. In future, this telemetry system will improve the detection of physiological abnormalities of moths.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.2
• /
• pp.1-6
• /
• 2002

In this paper, an Analog Flat Panel interface(AFPI) which supports for UXGa(Ultar extended Graphics Array)-Compatible TFT LCD Driver is designed. The Proposed AFPI is composed of 8-b ADC, Automatic Gain Control(AGC), Low-Jitter PLL. In order to obtain a high speed and low power consumption, an efficient architecture of 8-bit ADC is proposed, whose FR(Folding Rate) is 8, NFB(Number of Folding Block) is 2, and IR (Interpolating Rate) is 16. We can get high SNDR by adopting distributed track and hold circuits. Also a programmable AGC which is possible to control gain and clamp, and a low-jitter PLL are proposed. The chip has been fabricated with 0.25${\mu}{\textrm}{m}$ 1-poly S-metal n-well CMOS technology. The effective chip area is 3.6mm $\times$ 3.2mm and it dissipates about 602㎽ at 2.5V power supply. The INL and DNL are within $\pm$ 1LSB. The measured SNDR is about 43㏈, when the input frequency is 10MHz at 200MHz clock frequency.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.6
• /
• pp.847-853
• /
• 2016

Applications of Si have been increasingly exploited and extended to More-Moore, More-than-Moore, and beyond-CMOS approaches. Ge is regarded as one of the supplements for Si owing to its higher carrier mobilities and peculiar band structure, facilitating both advanced and optical applications. As an emerging metal-oxide device, the junctionless field-effect transistor (JLFET) has drawn considerable attention because of its simple process, less performance fluctuation, and stronger immunity against short-channel effects due to the absence of anisotype junctions. In this study, we investigated lateral field scalability, which is equivalent to channel-length scaling, in Si and Ge JLFETs. Through this, we can determine the usability of Si CMOS and hypothesize its replacement by Ge. For simulations with high accuracy, we performed rigorous modeling for ${\mu}_n$ and ${\mu}_p$ of Ge, which has seldom been reported. Although Ge has much higher ${\mu}_n$ and ${\mu}_p$ than Si, its saturation velocity ($v_{sat}$) is a more determining factor for maximum $I_{on}$. Thus, there is still room for pushing More-Moore technology because Si and Ge have a slight difference in $v_{sat}$. We compared both p- and n-type JLFETs in terms of $I_{on}$, $I_{off}$, $I_{on}/I_{off}$, and swing with the same channel doping and channel length/thickness. $I_{on}/I_{off}$ is inherently low for Ge but is invariant with $V_{DS}$. It is estimated that More-Moore approach can be further driven if Si is mounted on a JLFET until Ge has a strong possibility to replace Si for both p- and n-type devices for ultra-low-power applications.

• Journal of IKEEE
• /
• v.23 no.3
• /
• pp.954-961
• /
• 2019

This paper suggests an advanced 8T SRAM which can operate properly in subthreshold voltage regime. The memory cell consists of symmetric 8 transistors, in which the latch storing data is controlled by a column-wise assistline. During the read, the data storage nodes are temporarily decoupled from the read path, thus eliminating the read disturbance. Additionally, the cell keeps the noise-vulnerable 'low' node close to the ground, thereby improving the dummy-read stability. In the write, the boosted wordline facilitates to change the contents of the memory bit. At 0.4 V supply, the advanced 8T cell achieves 65% higher dummy-read stability and 3.7 times better write-ability compared to the commercialized 8T cell. The proposed cell and circuit techniques have been verified in a 16-kbit SRAM array designed with an industrial 180-nm low-power CMOS process.