• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• Journal of Power Electronics
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• v.16 no.3
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• pp.883-893
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• 2016

This paper presents a comprehensive analysis of the spurious turn-on phenomena in phase-shifted full-bridge (PSFB) converters. The conventional analysis of the spurious turn-on phenomenon does not establish in the PSFB converter as realizing zero voltage switching (ZVS). Firstly, a circuit model is proposed taking into account the parasitic capacitors and inductors of the transistors, as well as the parasitic elements of the power circuit loop. Second, an exhaustive investigation into the impact of all these parasitic elements on the spurious turn-on is conducted. It has been found that the spurious turn-on phenomenon is mainly attributed to the parasitic inductors of the power circuit loop, while the parasitic inductors of the transistors have a weak impact on this phenomenon. In addition, the operation principle of the PSFB converter makes the leading and lagging legs have distinguished differences with respect to the spurious turn-on problems. Design guidelines are given based on the theoretical analysis. Finally, detailed simulation and experimental results obtained with a 1.5 kW PSFB converter are given to validate proposed analysis.

• 전기의세계
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• v.20 no.6
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• pp.7-18
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• 1971

Secondary-side transfer phenomena of primary-side surge voltage in concentric-cylindrical transformers of a high turn-ratio still present a problem in transformer insulation design even in the case of a neutral solid-grounding type. The conventional methods of analyzing them so far are much complicated for practical applications. Therefore, this paper describes a new approach to the analysis of secondary-side transfer phenomena of surge in concentric-cylindrical transformers of high turn-ratio and solid-grounding type. This generalized approach is thought to be more simple with the use of minor network concepts than the conventional one by major network only. The result shows that the secondary-side transfer phenomena of surge voltage could not be neglected even in concentric-cylindrical transformer of high turn-ratio and solid-grounding type, and will be satisfactorily applicable to the design of neutral-solid-grounding type transformers.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.51 no.7
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• pp.339-350
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• 2002

Pole arcs, turn-on angle, and turn-off angle are major design factors, which affects Switched Reluctance Motor's torque performance. If these design factors are considered independently, the enhancement of SRM performance is restricted. Therefore, we need to consider pole arcs, turn-on angle and turn-off angle at the same time, when we design SR. In this paper, we analyze how these factors affect to torque ripple and average torque by using dynamic Finite Element Method(FEM) with derive circuit and present the good design results according to the various speeds. Especially, we formulate turn-on and turn-off angle from a voltage equation and present effective design range.

• Proceedings of the KIEE Conference
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• summer
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• pp.1187-1189
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• 2004

This paper presents a boost circuit topology driving in high - frequency. It solves the problem which arised from hard-switching in high-frequency using a period of resonant circuit and operating under the principle of ZCS turn-on and ZCZVS turn-off commutation schemes. In the existing circuit, it has the high voltage stress in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than voltage stress of existing circuit with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and the waveform of each mode. Also the experiment result compares the existing voltage stress of free-wheeling diode with the proposed voltage stress of that.

• Proceedings of the KIPE Conference
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• 2006.06a
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• pp.71-74
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• 2006

A new multi-output LLC resonant converter is proposed for high efficiency and low cost plasma display panel (PDP) power module. In the proposed converter, zero-voltage (ZV) turn-on of the primary MOSFETs and zero-voltage (ZC) turn-on and turn-off of the secondary diodes are guaranteed in the overall input voltage and output load ranges. In addition, the primary MOSFETs and the secondary diodes have the low voltage stresses clamped to input and the output voltages, respectively. Therefore, the proposed converter shows the high efficiency due to the minimized switching and conduction losses. Moreover, by employing the transformer with multiple secondary windings, the proposed converter can have multiple outputs, which show the great crossregulation characteristics. Therefore, the proposed converter is suitable for high efficiency and low cost PDP power module.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• Journal of Power Electronics
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• v.16 no.4
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• pp.1298-1305
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• 2016

This paper presents the development of a short-circuit protection mechanism on a high voltage switch (HVS) board which is built by a series connection of semiconductor switches. The HVS board is able to quickly detect and limit the peak fault current before the signal board triggers off a gate signal. Voltage clamping techniques are used to safely turn off the short-circuit current and to prevent overvoltage of the series-connected switches. The selection method of the main devices and the development of the HVS board are described in detail. Experimental results have demonstrated that the HVS board is capable of withstanding a short-circuit current at a rated voltage of 10kV without a di/dt slowing down inductor. The corresponding short-circuit current is restricted to 125 A within 100 ns and can safely turn off within 120 ns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.312-315
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• 2003

Basic design of RC-GCTs (Reserve-Conducting Gate-Commutated Thyristors) by novel punch-through (PT) concept with 5,500v rated voltage is described here. A PT and NPT (non punch-through) concept for the same blocking voltage has been compared in detail. The simulation work indicates that GCT with such PT design exhibits that the forward breakdown voltage is 6,400V which is enough for supporting 5500V blocking. Additionally, the real IGCT turn-off in the mode of PNP transistor has been realized. However, the carrier extraction from N-base to gate terminal will be drastic slowly in terms of NPT structure except for the high on-state voltage drop.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.