• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.50-55
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• 2011

In this paper, Intermediate frequency tunable 4th order Switched Capacitor(SC) bandpass Sigma-Delta(${\Sigma}-{\Delta}$) modulator using feedback integrator using feedback integrator coefficients is proposed. The center frequency of the modulator can be easily changed than conventional structure because of a number of integrator coefficients which is decided rate of capacitors in circuit is reduced. In addition additive clocks and additive clock generating circuit are not necessary. The purposed modulator was implemented in $0.18{\mu}m$ CMOS technology. The resolution of the modulator within 200 kHz bandwidth and 80 MHz sampling frequency under fin = 15 MHz, 20 MHz, 25 MHz are over 12 bit.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.55-60
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• 2001

RF MEMS is an exciting emerging technology that has great potential to develop TOC (Transceiver-on-Chip). Applications of the RF MEMS to wireless communications systems are presented. The ability of the RF MEMS technology to enhance the performance and to reduce the size of passive components, in particular, switches, inductors, and tunable capacitors, is addressed. A number of potential wireless system opportunities for the TOC are awaiting the maturation of the RF MEMS technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.4
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• pp.300-306
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• 2004

This paper reports a novel tunable bandpass filter using two-state switched inductor with direct-contact MEMS switches for wireless LAN applications. In our filter configuration, the switched inductor is implemented to obtain more stable and much larger frequency tuning ratio compared with variable capacitor-based tunable filter. The proposed tunable filter was fabricated using a micromachining technology and electrical performances of the fabricated filter were measured. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was measured of 58 V, and they showed the insertion loss of 0.1 dB and isolation of 26.3 dB at 2 GHz, respectively. The measured center frequencies of the fabricated filter were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• Journal of Advanced Navigation Technology
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• v.17 no.6
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• pp.720-725
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• 2013

This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.102-110
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• 2002

In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS(microelectro-mechanical systems) application with high performance and various function. In this paper, we present the fabrication of tunable capacitors and 3-dimensional inductors. This work was related to fabricated 3-dimensional device for need of micro-device in developing new intelligence age. This device was fabricated by electroplating used electroplating PR and high-vacuum evaporation of metal. Fabricated micro-inductor is consisted of air-bridge on electroplating rod and electroplated core. Micro-capacitor is consisted of thin metal membrane and electroplated core. Electroplating material is used Cu metal solvent. Air-gap between metal-layers function as almost perfect isolation layer. The most advantage of our micro-inductor and micro-capacitor compared to present device is a possibility that can fabricate on RF MEMS application with high performance and various functions.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.461-464
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• 1988

The design of VCO using OTA as active element is discussed in this paper. Several Quadrature oscillator structures ere presented. They use only OTAs and capacitors end are very useful for IC fablication. The frequency of oscillator, $\omega_0$ are proportional to the gm of the OTA and the structures are appropriate for high frequency yea and sinusoidal oscillator operation.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.529-530
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• 2008

The proposed CMOS Quadrature VCO for WLAN application was designed in TSMC $0.18\;{\mu}m$ RF CMOS technology. The QVCO based on NMOS back-gate as a coupling transistor and switched capacitors array without tail transistors is designed to generate quadrature output signals. The simulated results show that the QVCO core consumed 3.67 mA and 6.6 mW from a 1.8 V supply. The QVCO is tunable between $4.76\;GHz\;{\sim}\;6.35\;GHz$ and has a phase noise lower than -116.8 ㏈c/Hz at 1 MHz offset over the entire tuning range

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.11
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• pp.56-65
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• 1997

In this paper, a design of current-mode continuous-time filters for low voltage and high frequency applictions using complementary bipolar current mirror paris is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integrtion. Since the design method of the proposed curent-mode filters is based on the integrator type of realization, it can be used for a wide range of applications. And the cutoff frequency of th efilters can be easily changed by the DC cntrolling current. As design examples, the 5th order butterworth filters are designed by cascade and leapfrog methods with tunable cutoff frequencies from 30MHz to 100MHz. The characteristics of the designed current mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.5
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• pp.33-40
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• 1998

In this paper, a design of current-mode continuous-time filters for low voltage and low frequency applications using complementary bipolar current mirrors is presented. The proposed current-mode filters consist of simple bipolar current mirrors and capacitors and are quite suitable for monolithic integration. Since the design method of the proposed current-mode filters are based on the integrator type of realization, it can be used for a wide range of applications. Since the input impedance of simple bipolar current mirror is small, in this paper, negative feedback amplifier is used to realize is designed by cascade method. The cutoff frequency of the designed filter can be easily tunable by the DC controlling current from 60kHz to 120kHz. The characteristics of the designed current-mode filters are simulated and examined by SPICE using standard bipolar transistor parameters.