• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.101-102
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• 2015

• Journal of Magnetics
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• v.19 no.1
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• pp.10-14
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• 2014

In this study, we fabricate an integrated microfluidic chip with a planar Hall effect (PHE) sensor for single magnetic bead detection. The PHE sensor was constructed with a junction size of $10{\mu}m{\times}10{\mu}m$ using a trilayer structure of Ta(3 nm)/NiFe(10 nm)/Cu(1.2 nm)/IrMn(10 nm)/Ta(3 nm). The sensitivity of the PHE sensor was 19.86 ${\mu}V/Oe$. A diameter of 8.18 ${\mu}m$ magnetic beads was used, of which the saturation magnetization was ~2.1 emu/g. The magnetic susceptibility ${\chi}$ of these magnetic beads was calculated to be ~0.14. The diluted magnetic beads solution was introduced to the microfluidic channel attributing a single bead flow and simultaneously the PHE sensor voltage was measured to be 0.35 ${\mu}V$. The integrated microchip was able to detect a magnetic moment of $1.98{\times}10^{-10}$ emu.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1256-1258
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• 1993

Optical data storage offer high density storage and archival storage capability. In this study, we selected the ablation mechanism-one of an irreversible recording system-using the antireflection trilayer(ART) structure. Optical recording medium is a $(Te_{86}Se_{14})_{50}Bi_{50}$ thin films. Actually, ART structure is fabricated and compared to monolayer structure. ART structure leads to the reduction of recording power as well as an increase in the effciency compared to the monolayer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.213-215
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• 2009

• Journal of Magnetics
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• v.18 no.4
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• pp.380-385
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• 2013

We find a metastable vortex state of the perpendicular magnetic anisotropy free layer in spin transfer torque magnetic tunneling junctions by using micromagnetic simulations. The metastable vortex state does not exist in a single layer, and it is only found in the trilayer structure with the perpendicular magnetic anisotropy polarizer layer. It is revealed that the physical origin is the non-uniform stray field from the polarizer layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.972-974
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• 2005

For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to $Alq_3$. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer ($Alq_3-LiF-Al$), LiF and Mg inserted between ITO and $Alq_3$, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

• Fibers and Polymers
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• v.7 no.3
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• pp.217-222
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• 2006

Propargyl alcohol was coupled to 2,4-hexadiyne-1,6-diol (HDD) and crystallized in the process of ultraviolet irradiation-induced topochemical polymerization. The HDD polymer crystals were used as one component in the fabrication of organic photovoltaic cells, in combination with fullerene as the electron acceptor. The various structures of the produced photovoltaic cells included bilayer, trilayer, and bulk heterojunction structures. Their photovoltaic properties were analyzed in relation to crystal structure, electrochemical properties, and band structure of the HOD polydiacetylene polymers.

• Journal of Magnetics
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• v.17 no.4
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.64-70
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• 1995

We discussed the thermal analysis for a recording media with the variation of the laser pulse duration, the laser power and the temperature distribution in order to optimize the Te-based antireflection structure from the computer calculations. In the case that the radial heat diffusion is negligible, we can calculate the maximum temperature of the recording layer at the center of the spot by the Simple Model. The temperature profile of the recording layer is obtained from the Numerical Model by considering the total specific heat and the latent heat. As a result, the effect of the heat sinking acting as a thermal loss for the hole formation could be minimized by introducing the pulse with the hole formation duration(.tau.) below the thermal time constant(.tau.$_{D}$) of a dielectric layer. These requirments can be satisfied by using the dielectric thickness of the 2nd ART(Anti-Reflection Trilayer) condition or the dielectric materials with a low thermal diffusivity.y.