한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Effective structure of electron injection from ITO bottom cathode for inverted OLED

  • Chu, Ta-Ya (Department of Electrophysics, National Chiao Tung University) ;
  • Chen, Szu-Yi (Display Institute) ;
  • Chen, Jenn-Fang (Department of Electrophysics, National Chiao Tung University) ;
  • Chen, Chin H. (Display Institute, Microelectronics and Information Systems Research Center National Chiao Tung University)
  • Published : 2005.07.19
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Abstract

For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to $Alq_3$. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer ($Alq_3-LiF-Al$), LiF and Mg inserted between ITO and $Alq_3$, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

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