• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.467-471
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• 2005

In this paper, experimental methods about the flow behavior of thin polymer film by various edge patterns in the spin coating process for stable cover layer coating of a blu-ray disc is described. The blu-ray disc, a next-generation optical disc format over 25GB, consists of a 1.1m thick substrate and a 0.1mm tick cover layer. Generally, cover layer on the blu-ray disc is made by the polymer spin coating process. However, it is hard to secure sufficient coating uniformity around the rim on the cover layer. In order to get the uniform thickness deviation and to minimize the bead around the rim, the edge of the disc substrate can be modified into various patterns, such as normal plain, trench, step and chamfer pattern, etc, around the rim on the disc and experimented with various parameters, such as surface tension, viscosity, coating time, temperature and rotation speed, etc. And the optimal shape of the rim was tried to get by 3 dimensional computer simulation of the polymer expulsion process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• Journal of Powder Materials
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• v.20 no.1
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• Asian Journal of Atmospheric Environment
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• v.8 no.1
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• pp.15-24
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• 2014

The capital city of Himalayan Country Nepal, Kathmandu Valley is surrounded by consecutive high mountains, which limits the air distribution and mixing effects significantly. It in turn generates steady air flow pattern over a year except in monsoon season. The air shed in the Valley is easily trapped by the surrounded mountains and the inversion layer formulated as the cap. The $PM_{10}$ concentration was noticeably higher than the standard level (120 ${\mu}g/m^3$) in urban and suburban area of Kathmandu valley for all seasons except monsoon period. The Valley area experiences similar wind patterns (W, WWS, and S) for a year but the Easterly wind prevails only during the monsoon period. There was low and calm wind blows during the winter season. Because of this air flow structure, the air emission from various sources is accumulated within the valley air, high level of air pollution is frequently recorded with other air polluted cities over the world. In this Valley area, brick kilns are recognized as the major air pollution source followed by vehicles. Mostly Bull Trench Kiln (BKT), Hoffman Kiln and Vertical Shaft Brick Kiln (VSBK) are in operation for brick firing in Kathmandu valley where the fuels such as crushed coal, saw dust, and natural gas are used for processing bricks in this study. Tool for the Reduction and Assessment of Chemical and Other Environmental Impacts (TRACI) was used for screening and quantifying the potential impacts of air emission from firing fuels. The total Environmental Performance Score (EPS) was estimated and the EPS of coal was approximately 2.5 times higher than those of natural gas and saw dust. It is concluded that the crushed coal has more negative impact to the environment and human health than other fuel sources. Concerning the human health and environment point of view, alternative environment friendly firing fuel need to be used for brick industry in the kiln and the air pollution control devices also need to be applied for minimizing the air emissions from the kilns.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.3 s.40
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• pp.13-17
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• 2006

Dense and periodic arrays of holes and tungsten none dots were fabricated on silicon oxide and silicon. The holes were approximately 25 nm wide, 40 nm deep, and 60 nm apart. To obtain nano-size patterns, self-assembling resists were used to produce layer of hexagonally ordered parallel cylinders of polymethylmethacrylate(PMMA) in polystyrene(PS) matrix. The PMMA cylinders were degraded and removed with acetic acid rinse to produce a PS mask for pattern transfer. The silicon oxide was removed by fluorine-based reactive ion etching(RIE). Selectively deposited tungsten nano dots were formed inside nano-sized trench by using a low pressure chemical vapor deposition(LPCVD) method. Tungsten nano dot and trenched silicon sizes were 26 nm and 30 nm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Journal of the Korean Geographical Society
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• v.47 no.3
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• pp.328-346
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• 2012

This study provides quantitative constraints on Neogene uplift in the Korean peninsula using onshore paleo-shoreline records and seismic data. The eastern margin of Northeast Asia including Korea sits in the back-arc system behind the Western Pacific Subduction Zone, a complex trench triple junction of the Philippine Sea, Pacific, and Eurasian (Amurian) plates. An analysis of seismic data in the subduction zone shows that the pattern of uplift in the peninsula mirrors the extent of deep seismicity in subducting Pacific plate beneath. Combined with previous tomographic studies it is proposed that uplift is partly driven by asthenospheric upwelling caused by a sinking slab during the Neogene. In addition, the SHmax orientations of E-W and N-S trends in the peninsula are consistent with the prevailing in-situ stress fields in the eastern Eurasian continent generated by various plate boundary forces. The uplift in Korea during the Late Neogene is attributed, in part, to lithospheric failure relating to faulting movements, thus providing a link between dynamic effects of mantle upwelling at sinking slab edge and lithospheric responses driven by plate boundary forces.

• The korean journal of orthodontics
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• v.25 no.5 s.52
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• pp.511-523
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• 1995

The elastic open activator is one of the modified myodynamic activator. The reduced size of the appliance mass motivates the patients' comfort and longer time of wearing. Its peculiarities in loose fitting and the lack of appliance stabilization in the mouth draws the tongue and the surrounding functional matrices on close interaction with the appliance, consigns the physiologic exertion to target structures, and eventually makes it feasible to the inland of non-extraction treatment In the context of the sagittal malocclusion, the orthodontic trench is dependent upon the growth of basal structure aimed, therefore, it is contemplated to grabble the effects of Elastic Open Activator upon the class II malocclusion of growing child retrospectively. The cephalometric headfilms and study models of nine Class II malocclusion of growing child retrospectively. The cephalometric headfilms and study models of nine class II division 1 and five division 2 patients were evaluated and analyzed, and the following observations were drawn, 1. The maxilla maintained a normal growth pattern in both groups. 2. The mandible grew anteroinferiorly in both groups. 3. The upper incisors tipped ligually in Class II division 1 and tipped labially in Class II division 2 and anterior vertical alveolar growth was interrupted in both groups. 4. The lower incisors tipped labially. 5. There was an arch expansion in both groups and increase of available space in Class II division 2

• Ocean and Polar Research
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• v.25 no.4
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• pp.557-567
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• 2003

High-resolution (3.5 kHz) subbottom profiles were analyzed in order to reveal sedimentation pattern of late Quaternary in the northern South Shetland continental margin and the South Scotia Sea, Antarctica. On the basis of clarity, continuity and geometry of surface and subbottom echoes together with seafloor topography, high-resolution echo characters are classified into eight echo types which represent rock basements (echo type III-1), coarse-grained subglacial till or moraine (echo type I-1), slides/slumps (echo type IV), debris-flow deposits (echo types II-3 and III-2), and bottom-current deposits (echo types I-2, II-1 and II-2). Subglacial till or moraine (echo type I-1) is mostly present in the lower continental shelf and upper continental slope of the northern South Shetland continental margin, which changes downslope to slides/slumps (echo type IV) and debris-flow deposits (echo types II-3 and III-2) in the middle to lower continental slope. This distribution suggests that the continental slopes of the northern South Shetland continental margin were mostly affected by downslope gravitational processes. Further downslope, bottom-current sediments (echo type I-2) deposited by the southwestward flowing Antarctic Deep Water (ADW) occur at the South Shetland Trench, reflecting an Interaction between mass flows and bottom currents in the area. In contrast to the northern South Shetland continental margin, the South Scotia Sea is dominated by bottom-current deposits (echo types II-1 and II-2), indicating that the sedimentation was mostly controlled by the westward flowing ADW. Flow intensity of the ADW has increased in the relative topographic highs, forming thin covers of coarse-grained contourites (echo type II-1), whereas it has decreased in the relative topographic lows, depositing thick, fine-grained contourites (echo type II-2). The poor development of wave geometry in the fine-grained bottom-current deposits (echo type II-2) is suggestive of the unsteady nature of the ADW flow.