• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.272-278
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• 2002

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. In this paper, the effect of pattern density, trench width and selectivity of slurry on dishing in STI CMP process was investigated by using specially designed isolation pattern. As trench width increased, the dishing tends to increase. At $20{\mu}m$ pattern size, the dishing was decreased with increasing pattern density Low selectivity slurry shows less dishing at over $160{\mu}m$ trench width, whereas high selectivity slurry shows less dishing at below $160{\mu}m$ trench width.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.25.1-25.1
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• 2009

Pattern 웨이퍼 상의 오염입자 제거는 반도체 산업의 주된 과제 중 하나이다. Pattern의 선폭이 좁아짐에 따라 Pattern에 손상을 가하지 않고 오염입자를 제거 하는 것은 더욱 어려워지고 있다. 그뿐만 아니라 기존 습식세정 공정에서의 화학액에 의한 환경오염 및 박막의 손실도 문제가 되기 시작했다. 이러한 문제를 해결하기 위해 기존 세정공정에서 화학액의 농도를 낮추고 Megasonic 등을 이용하여 세정력을 보완하는 방법들이 연구되고 있다. 하지만 습식세정의 경우 강한 화학작용으로 인한 표면 손상 및 물 반점의 문제는 여전히 이슈가 되고 있다. 이러한 단점을 극복하기 위하여 건식 세정법이 제시되고 있으며 이 중 레이저 충격파는 레이저를 집속시켜 발생된 충격파를 이용하여 입자를 제거하기 때문에 국부적인 세정이 가능하며 세정력 조절이 가능하여 손상이 세정을 할 수 있다. 그러나 Pattern의 구조에 의해 전되는 세정력의 차이가 발생하고 Trench 내부의 오염입자제거 문제점이 발생할 수 있다. 시편은 Si STI Pattern을 100 nm PSL Particle (Red Fluorescence, Duke Scientific, USA) 을 50ppm 농도로 희석시킨 IPA에 dipping 하여 오염시킨 후 N2 Gas를 이용하여 건조하여 준비하였다. 그리고 레이저 충격파 세정 시스템은 최대 에너지 1.8 J까지 가능한 레이저를 발생하는 1,064 nm Nd:YAG 레이저를 이용하여 실험하였다. 레이져 충격파 실험은 충격파와 시편사이의 거리, gap distance와 에너지를 변환하여 세정효율을 관찰하였다. 세정효율은 세정 전후의 입자 감소량을 현광현미경 (LV-150, Nikon, Japan)를 이용하여 측정하였다. 그 결과, Trench 내부의 오염입자의 경우 Trench 밖의 오염입자에 비해 세정효율이 떨어지는 것으로 나타났으나 시편과 레이저 초점과의 거리가 가까워짐에 따라 Trench 내부의 오염입자에 대한 세정 효율을 증가시킬 수 있었다.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.1455-1460
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• 2005

This paper presents the results of an experimental study on the ground deformation by trench excavation for Diaphragm Wall construction. The model tests are performed to investigate the back ground deformation by lowering of slurry level in trench after excavating. Through these, the deformation characteristic of the back ground due to stress release of excavated space was investigated. This study considered relative density of soil mass and the distance between trench and surcharge. An experiment was performed in order to observe the failure pattern of a slurry-supported trench excavated in sandy ground. From model tests, in order to predict reasonably the deformation behavior of the adjacent ground due to the underground excavation, it is significantly recommended that the ground settlement by trench excavation should be considered.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.05a
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• pp.254-259
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• 2001

There are advantages in the installation of dual subsea pipelines over two separate single lines. In many case it can reduce the cost for trench, back-filling and installation. However the installation of dual pipelines often requires technical challenges. Dual Pipelines should be placed to be stable to external loading not only during the installation but also in the design life. Dual pipelines in trench can reduce the influence of external forces. To investigate applied forces as slope changes, number of experiments are conducted with PIV (Particle Image Velocimetry) in a circulating water channel. Numerical approaches are also made to compare with experimental results. The velocity fields around dual pipelines in trench are investigated and analysed. Comparison of both results show similar pattern of flow around dual pipelines. it is proved that the trench slope affects the pipeline stability significantly. The results can be applied in the stability design of dual pipelines in trench section. The complex flow patterns can be referenced effectively linked in the understanding of fluid around circular bodies in trench.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• 한국방재학회:학술대회논문집
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• 2007.02a
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• pp.628-631
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• 2007

One of the structural measures for the peak flow reduction is infiltration facilities. There are many types in infiltration facilities - infiltration basin, trench, bed, porous pavement, percolated subdrain, dry well. In this study runoff reduction effect of infiltration trench is analyzed by WinSLAMM. Runoff reduction effect is investigated by each design rainfall and temporal pattern of rainfall particularly. The biggest reduction is shown in Yen and Chow's temporal pattern of design rainfall and the smallest reduction is shown in Huff's first quartile pattern. Runoff reduction rate is presented about 6 to 14 percentage, and the larger return period, the smaller runoff reduction rate.

• Journal of the Korean Geotechnical Society
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• v.22 no.12
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• pp.77-88
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• 2006

A series of model tests were performed to investigate the ground deformation during trench excavation for diaphragm walls. An apparatus was manufactured to observe the failure pattern of a slurry-supported trench in sandy ground. Ground deformations including settlement and lateral displacement of the surrounding ground adjacent to the trench were carefully monitored during excavation. Experimental observations indicated that the settlement of the adjacent ground increased with closing to the trench. Especially, the considerable settlement occurred at the distance which was equal to 40% of the excavation depth. And, the higher settlement was obtained when the relative density of ground was looser and the ground water table was higher. Also, the lateral wall face of excavated trench was bulged with lowering the slurry level In stages and then the upper part of trench failed finally. The envelope of ground surface settlement could be represented as a hyperbolic line and the measured settlement was smaller than those predicted by Clough and O'Rourke (1990).