• 센서학회지
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• 제31권1호
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• pp.41-44
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• 2022

In this study, we have fabricated and characterized vertical double-gate (DG) InGaAs tunnel field-effect-transistors (TFETs) with Al₂O₃/HfO₂ = 1/5 nm bi-layer gate dielectric by employing a top-down approach. The device exhibited excellent characteristics including a minimum subthreshold swing of 60 mV/decade, a maximum transconductance of 141 µS/㎛, and an on/off current ratio of over 10³ at 20℃. Although the TFETs were fabricated using a dry etch-based top-down approach, the values of DIBL and hysteresis were as low as 40 mV/V and below 10 mV, respectively. By evaluating the effects of constant voltage and hot carrier injection stress on the vertical DG InGaAs TFET, we have identified the dominant charge trapping mechanism in TFETs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.205-214
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• 2002

The reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. Especially, we have focused on the mechanism changes with the hydrogen surface coverage difference. On the sparsely covered surface, the gas atom interacts with the preadsorbed hydrogen atom and adjacent bare surface sites. In this case, it is shown that the chemisorption of H(g) is of major importance. Nearly all of the chemisorption events accompany the desorption of H(ad), i.e., adisplacement reaction. Although much less important than the displacement reaction, the formation of $H_2(g)$ is the second most significant reaction pathway. At gas temperature of 1800 K and surface temperature of 300 K, the probabilities of these two reactions are 0.750 and 0.065, respectively. The adsorption of H(g) without dissociating H(ad) is found to be negligible. In the reaction pathway forming $H_2$, most of the reaction energy is carried by $H_2(g)$. Although the majority of $H_2(g)$ molecules are produced in sub-picosecond, direct-mode collisions, there is a small amount of $H_2(g)$ produced in multiple impact collisions, which is characteristic of complex-mode collisions. On the fully covered surface, it has been shown that the formation of $H_2(g)$ is of major importance. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. At gas temperature of 1800 K and surface temperature of 300 K, the probability of the $H_2(g)$ formation reaction is 0.082. In this case, neither the gas atom trapping nor the displacement reaction has been found.

• 대한전자공학회논문지SD
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• 제44권2호
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• pp.13-18
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• 2007

본 연구에서는 Lateral DMOS 소자열화 메카니즘이 게이트 산화층의 두께에 따라 다른 것을 측정을 통하여 알 수 있었다. 얇은 산화층 소자는 채널에 생성되는 계면상태와 drift 영역에 포획되는 홀에 의하여 소자가 열화 되고 두꺼운 산화층 소자에서는 채널 영역의 계면상태 생성에 의해서 소자가 열화 되는 것으로 알 수 있었다. 그리고 소자 시뮬레이션을 통하여 다른 열화 메카니즘을 입증할 수 있었다. DC 스트레스에서의 소자 열화와 AC 스트레스에서 소자열화의 비교로부터 AC스트레스에서 소자열화가 적게 되었으며 게이트 펄스의 주파수가 증가할수록 소자열화가 심함을 알 수 있었다. 그 결과로부터 RF LDMOS 에서는 소자열화가 소자설계 및 회로설계에 중요한 변수로 작용할 수 있음을 알 수 있었다.

• 한국진공학회지
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• 제7권4호
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• pp.306-313
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• 1998

전기적 착색 텅스텐산화물 박막이 전자비임 증착법에 의해 제작되었다. 전자비임에 의한 막의 퇴화에 미치는 영향이 논의되었다. 진공도 $10^{-4}$mbar에서 제작된 막이 사이클 내 구성 시험에 의한 결과, 가장 안정하였다. 황산 수용액에서 막의 퇴화는 진공도에 의존함을 보였다. 막두께는 산화와 환원전류 그리고 광학적 특성에 큰 영향을 미쳤다. 박막들 중에서 두께 5,000$\AA$의 시료가 사이클에 의한 내구성이 가정 안정하였다. 착색과 탈색이 반복되는 동안에 막의 퇴화의 근원은 막속에 이온의 누적 때문이며, 이로인해 산화와 환원전류가 감 소하였다. 티타늄의 양이 약10~15mol% 함유된 텅스텐산화물 박막은 착색과 탈색사이클이 반복되는 동안 최소한의 퇴화가 일어나서 가정 안정하였다. 사이클이 반복되는 동안 최소한 의 막 퇴화의 주 원인은 막속에 리튬이온의 포획위치 개수의 감소에 있었으며 이로인해 막 의 내구성이 증가하였다.

• 동의생리병리학회지
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• 제17권1호
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• pp.91-100
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• 2003

In the present study, we investigated the protective effect of the Lycii Fructus water extracts (LFE) against CCl4-induced hepatotoxicity and the mechanism underlying these protective effects in the rats. The pretreatment of LFE has shown to possess a significant protective effect by lowering the serum alanine and aspartate aminoteansferase (AST and ALT) and alkaline phosphatase (ALP). This hepatoprotective action was confirmed by histological observation, In addition, the pretreatment of LFE prevented the elevation of hepatic malondialdehyde (MDA) formation and the depletion of reduced glutathione (GSH) content and catalase activity in the liver of CC1₄-injected rats. The LFE also displayed hydroxide radical scavenging activity in a dose-dependent manner (IC50 = 83.6 μg/ml), as assayed by electron spin resonance (ESR) spin-trapping technique. Moreover, the expression of cytochrome P450 2E1 (CYP2E1) mRNA, as measured by reverse transcriptase-polymerase chain reaction (RT-PCR), was significantly decreased in the liver of LFE-pretreated rats when compared with that in the liver of control group. Based on these results, it was suggested that the hepatoprotective effects of the LFE may be related to antioxidant effects and regulation of CYP2E1 gene expression.

• 한국세라믹학회지
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• 제55권3호
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• pp.244-260
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• 2018

Issues in the electrical characterization of semiconducting photoanodes in a photoelectrochemical (PEC) cell, such as the cell geometry dependence, scan rate dependence in DC measurements, and the frequency dependence in AC measurements, are addressed, using the example of a $TiO_2$ photoanode. Contrary to conventional constant phase element (CPE) modeling, the capacitive behavior associated with Mott-Schottky (MS) response was successfully modeled by a Havriliak-Negami (HN) capacitance function-which allowed the determination of frequency-independent Schottky capacitance parameters to be explained by a trapping mechanism. Additional polarization can be successfully described by the parallel connection of a Bisquert transmission line (TL) model for the diffusion-recombination process in the nanostructured $TiO_2$ electrode. Instead of shunt CPEs generally employed for the non-ideal TL feature, TL models with ideal shunt capacitors can describe the experimental data in the presence of an infinite-length Warburg element as internal interfacial impedance - a characteristic suggested to be a generic feature of many electrochemical cells. Fully parametrized impedance spectra finally allow in-depth physicochemical interpretations.

• 한국해양공학회지
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• 제17권5호
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• pp.32-38
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• 2003

This study investigates the distribution characteristics and relationship of water quality, and analyzes the spatial and temporal variation and distribution of the pollutant loads at Yeong-il Bay. The results of these analysis, the concentrations of nutrient loads (T-N and T-P), both appeared to be at the maximum value in November, while most small values were taken in May for the T-N, and in August for the T-P. For COD, the maximum concentration was in August, which has much precipitation during the same season, T-N was at the mean, and T-P was at the minimum value. Using the cluster analysis to develop the division of the sea basin by the dendrogram, before and after construction of Pohang New-port, the variation characteristics of water quality of Yeong-il Bay were discussed. The in flowing pollutant loads were transported to the landward by the high-density salinity water volume of the bottom layer therefore, it formed nutrient trap or coastal trapping areas of the pollutant load. By this mechanism, it is clear that the water volume with high-density nutrient exists on both sides of the Pohang New-port. Thus, the sea basins increasing concentration of the pollutant load at Yeong-il Bay are most prevalent at Hyeong-san estuary, the Pohang Old, and New-port. To improve water quality of this sea basin, the reduction of these nutrients loads should be the highest priority.

• 대한의용생체공학회:의공학회지
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• 제34권4호
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• pp.189-196
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• 2013

Dielectrophoresis(DEP) is useful in manipulation and separation of micro-sized particles including biological samples such as bacteria, blood cells, and cancer cells in a micro-fluidic device. Especially, those separation and manipulation techniques using DEP in combination of micro fabrication technique have been researched more and more. Recently, it is revealed that a window structure of insulating layer in microfluidic DEP chip is key role in trap of micro-particles around the window structure. However, the trap phenomenon-driven by DEP force gradient did not fully understand and is still illusive. In this study, we characterize the trap mechanism and efficiency with different shapes of window in a microfluidic DEP chip. To do this characterization, we fabricated 4 different windows shapes such as rhombus, circle, squares, and hexagon inside a micro-fluidic chip, and performed micro-sized particles manipulation experiments as varying the frequency and voltage of AC signal. Moreover, the numerical simulation with the same parameters that were used in the experiment was also performed in order to compare the simulation results and the experimental results. Those comparison shows that both results are closely matched. This study may be helpful in design and development of microfluidic DEP chip for trapping micro-scaled biological particle.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.639-643
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• 2002

The main purpose of this study was to investigate the formation mechanisms of imperfections such as irregular humps, outer cavity and inner cavity in the laser fusion zone of diamond saw blade. Laser beam welding was conducted to join two parts of blade; mild steel shank and Fe-Co-Ni sintered tip. The variables were beam power and travel speed. The microstructure and elements distributions of specimens were analyzed with SEM, AES, EPMA and so on. It was found that these imperfections were responded to heat input. Irregular humps were reduced in 10.4∼17.6kJ/m heat input range. However there were no clear evidences, which could explain the relations between humps formation and heat input. The number of outer cavity and inner cavity decreased as heat input was increased. Considering both possible defects formations mechanisms, it could be thought that outer cavity was caused by insufficient refill of keyhole, which was from rapid solidification of molten metal and fast molten metal flow to the rear keyhole wall at low heat input. More inner cavities were found near the interface of the fusion zone and sintered segment and in the bottom of the fusion zone. Inner cavity was mainly formed in the upper fusion zone at high heat input whereas was in the bottom at low heat input. Inner cavity was from trapping of coarsened preexist pores in the sintered tip and metal vapor due to rapid solidification of molten metal before the bubbles escaped.