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Hot-Carrier-Induced Degradation of Lateral DMOS Transistors under DC and AC Stress  

Lee, In-Kyong (Dept. of Electronic Eng. Incheon University)
Yun, Se-Re-Na (Dept. of Electronic Eng. Incheon University)
Yu, Chong-Gun (Dept. of Electronic Eng. Incheon University)
Park, J.T. (Dept. of Electronic Eng. Incheon University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.2, 2007 , pp. 13-18 More about this Journal
Abstract
This paper presents the experimental findings on the different degradation mechanism which depends on the gate oxide thickness in lateral DMOS transistors. For thin oxide devices, the generation of interface states in the channel region and the trapped holes in the drift region is found to be the causes of the device degradation. For thick devices, the generation of interface states in the channel region is found to be the causes of the device degradation. We confirmed the different degradation mechanism using device simulation. From the comparison of device degradation under DC and AC stress, it is found that the device degradation is more significant under DC stress than one under AC stress. The device degradation under AC stress is more significant in high frequency. Therefore the hot carrier induced degradation should be more carefully considered in the design of RF LDMOS transistors and circuit design.
Keywords
lateral DMOS; hot carrier effects; device degradation; interface state generation; hole trapping;
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