• Advances in nano research
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• v.13 no.1
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• pp.1-12
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• 2022

The existence of active material in the environment causes the small-scale systems to be sensitive to the actual environment. Carbon dioxide is one of the active materials that exists a lot in the air conditions of the living environment. However, in some applications, the carbon dioxide-coated is used to improve the performance of systems against the destructive factors such as the corrosion; nevertheless, in the current research, the stability analysis of a carbon dioxide capture mechanism-coated beam is investigated according to the mathematical simulation of a rectangular composite beam utilizing the modified couple stress theory. The composite mechanism of carbon dioxide trapping is made of a polyacrylonitrile substrate that supports a cross-link polydimethylsiloxane gutter layer as the carbon dioxide mechanism trapping. Three novel types of carbon dioxide trapping mechanism involving methacrylate, poly (ethylene glycol) methyl ether methacrylate, and three pedant methacrylates are considered, which were introduced by Fu et al. (2016). Finally, according to introducing the methodology of carbon dioxide (CO₂) trapping, the impact of various effective parameters on the stability of composite beams will be analyzed in detail.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.380-382
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• 2016

The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

• Computers and Concrete
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• v.30 no.3
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• pp.185-196
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• 2022

In this paper, the dynamic characteristics of a composite cylindrical beam made of a mechanism of carbon dioxide absorption coated on the tube core are investigated based on the classical beam theory coupled with the modified couple stress theory. The composite tube structures are assumed to be uniform along the tube length, and the energy method regarding the Hamilton principle is utilized for generating the governing equations. A powerful numerical solution, the generalized differential quadrature method (GDQM), is employed to solve the differential equations. The carbon dioxide trapping mechanism is a composite consisting of a polyacrylonitrile substrate and a cross-link polydimethylsiloxane gutter layer. Methacrylate, poly (ethylene glycol), methyl ether methacrylate, and three pedant methacrylates are all taken into account as potential mechanisms for capturing carbon dioxide. The application of the present study is helpful in the design and production of microelectromechanical systems (MEMS) and the different valuable parameters, such as the length-scale parameter, rate of section change, aspect ratio, etc., are presented in detail.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1121-1127
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• 1994

The accelerated degradation phenomena in amorphous silicon thin film transistors due to both electrical stress and visible light illumination under the elevated temperature have been investigated systematically as a function of gate bias, light intensity, and stress time. It has been found that, in case of electrical stress, the thrshold voltage shifts of a-Si:H TFT's may be attributed to the defect creation process at the early stage, while the charge trapping phenomena may be dominant when the stressing periods exceed about 2 hours. It has been also observed that the degradation in the device characteristics of a-Si:H TFT's is accelerated due to multiple stress effects, where the defect creation mechanism may be more responsible for the degradation rather than the charge trapping mechanism.

• Natural Product Sciences
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• v.27 no.4
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• pp.245-250
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• 2021

The methylglyoxal (MGO) trapping constituents from Malus baccata L. were investigated using incubation of MGO and crude extract under physiological conditions followed by HPLC analysis. The peak areas of MGO trapping compounds decreased, and their chemical structures were identified by HPLC-ESI/MS. Sieboldin was identified as a major active molecule representing MGO-trapping activity of the crude extract. After reaction of sieboldin and MGO, remaining MGO was calculated by microplate assay method using imine (Schiff base) formation of 2,4-dinitrophenylhydrazine (DNPH) and aldehyde group. After 4 h incubation, sieboldin trapped over 43.8% MGO at a concentration of 0.33 mM and showed MGO scavenging activity with an RC₅₀ value of 0.88 mM for the incubation of 30 min under physiological conditions. It was also confirmed that sieboldin inhibited the production of advanced glycation end products (AGE) produced by bovine serum albumins (BSA)/MGO. Additionally, MGO trapping mechanism of sieboldin was more specifically identified by ¹H-, ¹³C-, 2D NMR and, confirm to be attached to the position of C-3' (or 5').

• Journal of the Korean Chemical Society
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• v.28 no.4
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• pp.251-258
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• 1984

The mechanism of photosensitization and the affect of binder on dye-sensitized ZnO have been studied by surface photovoltage spectroscopy. It has been found that the value of energy trapping level $E_{t1}$ on ZnO is 1.12eV (${\lambda$ = 1,100nm) and that of energy trapping level $E_{t2}$ on dye-sensitized ZnO is 0.99eV (${\lambda$ = 1,250nm) which is shifted towards a longer wavelength. The effect of binder on ZnO has been increased the efficiency of surface photovoltage, but it does not effect the values of energy trapping level. The acid-type dyes agree well with the prediction based on an electron transfer mechanism. The desensitization of the Na salt-type dyes for the intrinsic photoresponse of zinc oxide can be explained by energy transfer mechanism. It has been obtained that the dye-sensitized ZnO indicates the possibility of electrophotographic photosensitizer for the infrared range of light.

• Journal of Welding and Joining
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• v.21 no.3
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• pp.58-67
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• 2003

In this study, the formation mechanism of discontinuities in the laser fusion zone of diamond saw blade was investigated. $CO_2$ laser weldings were conducted along the butt between Fe base sintered tip and carbon steel shank with sets of variable welding parameters. The effect of heat input on irregular humps, outer cavity, inner cavity and bond strengh was evaluated. The optimum heat input to have a proper humps was in the range of 10.4~$17.6kJm_{-1}$. With increasing heat input, both outer and inner cavities were reduced. The outer cavity was caused by insufficient refill of keyhole, while inner cavity was caused by trapping of bubble in molten metal. The bubble came from sintered tip and intensive vaporization at bottom tip of the keyhole. A gas formation and low melting point element vaporization were not occurred during welding. We could not find any relationship between bond strength and amount of discontinuities. Because the fracture were occurred in not only sintered tip but also carbon steel shank due to hardness distributions.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.10
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.