• Journal of Korean Society of Forest Science
• /
• v.97 no.5
• /
• pp.555-558
• /
• 2008

Trapping efficiency of various sex pheromone blends of the peach pyralid moth, Dichocrocis punctiferalis was compared by field study to develop monitoring system with its sex pheromone at chestnut orchards in Korea. Five candidates of the sex pheromone blends used for the field trapping of D. punctiferalis males were 70:30, 75:25, 80:20, 85:15 and 90:10 mixture of (E)-10-hexadecenyl aldehyde (E10-16:Al) and (Z)-10-hexadecenyl aldehyde (Z10-16:Al). All lures were treated with 1 or 2 mg of each blends. During 2 years of field survey, the 75:25 blend was usually the most effective in attracting males among 5 blends tested. For the 2nd generation, the best capturing activity for D. punctiferalis male was observed by lure with 75:25 blend. Both 90:10 and 75:25 blends showed highest efficiency for the 3rd generation. In most cases. lures treated with 1 mg of blend caught more male moths than these treated with 2 mg of blend.

• The Bulletin of The Korean Astronomical Society
• /
• v.37 no.1
• /
• pp.90.2-90.2
• /
• 2012

Geosynchronous electron flux dropouts are most likely due to fast drift loss of the particles to the magnetopause (or equivalently, the "magnetopause shadowing effect"). A possible effect related to the drift loss is the radial diffusion of PSD due to gradient of PSD set by the drift loss effect at an outer L region. This possibly implies that the drift loss can affect the flux levels even inside the trapping boundary. We recently investigated the details of such diffusion process by solving the diffusion equation with a set of initial and boundary conditions set by the drift loss. Motivated by the simulation work, we have examined observationally the energy spectrum and pitch angle distribution near trapping boundary during the geosynchronous flux dropouts. For this work, we have first identified a list of geosynchronous flux dropout events for 2007-2010 from GOES satellite electron measurements and solar wind pressures observed by ACE satellite. We have then used the electron data from the Time History of Events and Macroscale Interactions during Substorms (THEMIS) spacecraft measurements to investigate the particle fluxes. The five THEMIS spacecraft sufficiently cover the inner magnetospheric regions near the equatorial plane and thus provide us with data of much higher spatial resolution. In this paper, we report the results of our investigations on the energy spectrum and pitch angle distribution near trapping boundary during the geosynchronous flux dropout events and discuss implications on the effects of the drift loss on the flux levels at inner L regions.

• Korean Journal of Materials Research
• /
• v.23 no.2
• /
• pp.116-122
• /
• 2013

For fabricating silicon solar cells with high conversion efficiency, texturing is one of the most effective techniques to increase short circuit current by enhancing light trapping. In this study, four different types of textures, large V-groove, large U-groove, small V-groove, and small U-groove, were prepared by a wet etching process. Silicon substrates with V-grooves were fabricated by an anisotropic etching process using a KOH solution mixed with isopropyl alcohol (IPA), and the size of the V-grooves was controlled by varying the concentration of IPA. The isotropic etching process following anisotropic etching resulted in U-grooves and the isotropic etching time was determined to obtain U-grooves with an opening angle of approximately $60^{\circ}$. The results indicated that U-grooves had a larger diffuse reflectance than V-grooves and the reflectances of small grooves was slightly higher than those of large grooves depending on the size of the grooves. Then amorphous Si:H thin film solar cells were fabricated on textured substrates to investigate the light trapping effect of textures with different shapes and sizes. Among the textures fabricated in this work, the solar cells on the substrate with small U-grooves had the largest short circuit current, 19.20 mA/$cm^2$. External quantum efficiency data also demonstrated that the small, U-shape textures are more effective for light trapping than large, V-shape textures.

• Journal of Korean Society on Water Environment
• /
• v.31 no.5
• /
• pp.482-490
• /
• 2015

In this study, considering the factors that affects sediment trapping efficiency of Vegetative Filter Strips (VFS), the scenarios were designed to develop a regression equation to estimate sediment trapping efficiency of VFS for agricultural fields in South-Korea. For this, general conditions of agricultural fields in South-Korea were investigated. Then, based on these results, total 53,460 scenarios were set and simulated by Vegetative Filter Strip MODel (VFSMOD-w). Two variables were determined from the results of 53,460 scenarios. These two variables were applied to CurveExpert for development of a equation, which can estimate sediment trapping efficiency of VFS. The equation developed in this study can be used in SWAT model for estimation of sediment reduction efficiency of VFS to upland field in Korea. Moreover, it is expected that VFS will be effectively applied to agricultural fields in South-Korea.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.3
• /
• pp.19-24
• /
• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.12-17
• /
• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Journal of Adhesion and Interface
• /
• v.21 no.4
• /
• pp.129-134
• /
• 2020

Understanding charge trapping at the interface between conjugated semiconductor and polymer dielectric basically gives insight into the development of long-term stable organic field-effect transistors (OFET). Here, the charge transport properties of OFETs using polymer dielectric with various molecular weights (MWs) have been investigated. The conjugated semiconductor, pentacene exhibited morphology and crystallinity, insensitive to MWs of polymethyl methacrylate (PMMA) dielectric. Consequently, transfer curves and field-effect mobilities of as-prepared devices are independent of MWs. Under bias stress in humid environment, however, the drain current decay as well as transfer curve shift are found to increase as the MW of PMMA decreases (MW effect). The charge trapping induced by MW effect is irreversible, that is, the localized charges are difficult to be delocalized. The MW effect is caused by the variation in the density of polymer chain ends in the PMMA: the free volumes at the PMMA chain ends act as charge trap sites, corresponding to drain current decay depending on MWs of PMMA.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.3
• /
• pp.226-232
• /
• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• Journal of Korean Neurosurgical Society
• /
• v.51 no.3
• /
• pp.160-163
• /
• 2012

We report an unusual case of lateral medullary infarction after successful embolization of the vertebral artery dissecting aneurysm (VADA). A 49-year-old man who had no noteworthy previous medical history was admitted to our hospital with a severe headache. Computed tomography (CT) revealed a subarachnoid hemorrhage, located in the basal cistern and posterior fossa. Cerebral angiography showed a VADA, that did not involve the origin of the posterior inferior cerebellar artery (PICA). We treated this aneurysm via endovascular trapping of the vertebral artery distal to the PICA. After operation, CT revealed post-hemorrhagic hydrocephalus, which we resolved with a permanent ventriculoperitoneal shunt procedure. Postoperatively, the patient experienced transient mild hoarsness and dysphagia. Magnetic resonance image (MRI) showed a small infarction in the right side of the medulla. The patient recovered well, though he still had some residual symptom of dysphagia at discharge. Such an event is uncommon but can be a major clinical concern. Further investigation to reveal risk factors and/or causative mechanisms for the medullary infarction after successful endovascular trapping of the VADA are sorely needed, to minimize such a complication.

• Journal of Korean Neurosurgical Society
• /
• v.51 no.3
• /
• pp.155-159
• /
• 2012

The treatment of bilateral vertebral artery dissecting aneurysms (VADAs) presenting with subarachnoid hemorrhage (SAH) is still challenging. The authors report a rare case of bilateral VADA treated with coil trapping of ruptured VADA and covered stents implantation after multiple unsuccessful stent assisted coiling of the contralateral unruptured VADA. A 44-year-old woman was admitted to our hospital because of severe headache and sudden stuporous consciousness. Brain CT showed thick SAH and intraventricular hemorrhage. Cerebral angiography demonstrated bilateral VADA. Based on the SAH pattern and aneurysm configurations, the right VADA was considered ruptured. This was trapped with endovascular coils without difficulty. One month later, the contralateral unruptured VADA was protected using a stent-within-a-stent technique, but marked enlargement of the left VADA was detected by 8-months follow-up angiography. Subsequently two times coil packing for pseudosacs resulted in near complete occlusion of left VADA. However, it continued to grow. Covered stents graft below the posterior inferior cerebellar artery (PICA) origin and a coronary stent implantation across the origin of the PICA resulted in near complete obliteration of the VADA. Covered stent graft can be used as a last therapeutic option for the management of VADA, which requires absolute preservation of VA flow.