A Study on the Application of Ag Nano-Dots Structure to Improve the Light Trapping Effect of Crystalline Silicon Solar Cell

단결정 실리콘 태양전지의 광 포획 효과 개선을 위한 Ag nano-dots 구조 적용 연구

  • Choi, Jeong-Ho (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Roh, Si-Cheol (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (Dept. of Electrical & Electronic & Communication Engineering, Korea University of Technology and Education)
  • 최정호 (한국기술교육대학교 전기.전자.통신공학부) ;
  • 노시철 (한국기술교육대학교 전기.전자.통신공학부) ;
  • 서화일 (한국기술교육대학교 전기.전자.통신공학부)
  • Received : 2019.08.09
  • Accepted : 2019.09.23
  • Published : 2019.09.30

Abstract

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

Keywords

References

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