• Applied Microscopy
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• 제50권
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• pp.28.1-28.6
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• 2020

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

• 한국조명전기설비학회지:조명전기설비
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• 제1권2호
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• pp.74-81
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• 1987

고분자 절연재료에 전하주입시 발생하는 캐리어 트랩현상은 재료의 절연성을 저하시키는데 중요한 영향을 미치는 것으로 알려져 있다. 따라서 본 연구에서는 절연재료의 전기적 특성을 개선한다는 측면에서 캐리어의 거동을 파악하기 위해 내열성이 폴리프로필렌보다 우수한 이축 연신된 폴리프로필렌 필름(두께 $50\mu\textrm{m}$)을 선정하여 전계변화에 따른 열자격전류 스펙트라를 분석 검토하였다. 온도범위 303~413[K]와 전계범위 2~80[㎹/m]에서 열자격 전류의 변화를 살펴본 결과 전계 12[㎹/m]이하에서는 전하주입의 효과가 관찰되지 않았으나 전계가 점점 높아지면 트랩된 공간전하와 전극으로부터 주입된 공간전하가 형성되어 Hetero 및 Homo성 열자격전류 스펙트라가 나타나며 이는 결국 절연파괴를 야기시키는 것으로 예측되어진다. 또한 이축 연신된 시료가 미연신 재료보다 우수한 절연특성을 가지고 있음을 확인 할 수 있었다.

• 한국재료학회지
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• 제27권11호
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• pp.590-596
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• 2017

We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with $Al_2O_3/PI$, a single PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%), and a double PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and long-term retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20 W.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1295-1296
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• 2006

수소화된 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)의 이력 현상이 능동형 유기 발광 다이오드(Active-Matrix Organic Light Emitting Diode) 디스플레이 패널을 구동할 경우에, 발생할 수 있는 잔상(Residual Image) 문제를 단위 소자 및 회로에서 실험을 통하여 규명하였다. 게이트 시작 전압을 바꾸어 VGS-ID 특성을 측정할 경우, 게이트 시작 전압이 5V에서 시작한 VGS-ID 곡선이 10V에서 시작한 VGS-ID 곡선에 비해 왼쪽으로 0.15V 이동하였다. 이러한 결과는 게이트 시작 전압의 차이에 의해 발생한 트랩된 전하량(Trapped Charge) 변화로 설명할 수 있다. 또한, 인가하는 게이트 전압 간격을 0.5V에서 0.05V로 감소시켰을 때 전하 디트래핑 비율의 변화(Charge De-trapping Rate)로 인하여, 이력 현상(Hysteresis Phenomenon)으로 인한 단위 소자에서의 문턱전압의 변화가 0.78V에서 0.39V로 감소함을 관찰하였다. 제작된 2-TFT 1-Capacitor의 ANGLED 화소에서 (n-1)번째 프레임에서의 OLED 전류가 (n)번째 프레임에서의 OLED 전류에 35%의 전류오차를 발생시키는 것을 측정 및 분석하였다.

• 조명전기설비학회논문지
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• 제16권1호
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• pp.8-12
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• 2002

본 논문은 LCD의 백라이트로서 고휘도를 내는 간단한 구조의 평판형광램프를 연구하였다. 평판형광램프는 ITO glass와 절연층, 형광층, 전극층, gas층으로 구성된다. 이 램프의 방전개시전압은 주파수가 증가하면 감소하며 이러한 경향으로는 gas층에서 트립된 Xe과 Ar 양이온에 기인된 공간방전효과의 결과이다. 높은 구동 주파수에서 uniform 전압의 감소는 초기 구동에서 발생된 남아있는 공간전하에 기인한다. 결과로서 Xe gas를 사용한 평판형광램프는 구동전압 700[ $V_{rms}$], 주파수 80[kHz]에서 2700[cd/ $m^2$]의 휘도, 균일도 96[%], 최대 효율은 51[m/W]를 얻었다.다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.315-318
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• 1998

Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• 대한전자공학회논문지TE
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• 제37권1호
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• pp.12-17
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• 2000

본 논문은 가스의 방전 현상으로부터 발생되는 자외선을 이용하는 평판 형광 램프의 주파수 특성에 대하여 연구하였다. 램프는 절연층, 형광층, 가스층으로 구성된다. 램프의 특성에서 불꽃 전압과 휘도 균일 전압은 주파수의 증가에 따라 감소하였다. 이것은 가스 갭내에서의 공간 전하 효과로 설명이 가능하였다. FFL의 휘도는 700Vrms, 80 kHz의 구동 조건에서 2700cd/$m^2$ 을 얻었으며, 최대 휘도 효율은 5 lm/W를 보였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.97-104
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• 1997

In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.